US4295924A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for providing self-aligned conductor in a V-groove device
Assignee: International Business Machines Corp
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Filing: 1979-12-17
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Granted: 1981-10-20
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Expires: 1999-12-17
Abstract
Abstract A method for providing self-aligned conductors in vertically integrated semiconductor devices which includes providing recesses in the surface of a semiconductor substrate for the fabrication of V-groove devices, providing a conductive layer over the surface and then applying a layer of masking material over the conductive layer to form a planar upper surface, selectively etching the masking material until it remains only in the recesses and then selectively etching the exposed portion of the conductive layer.
Inventors
- 👤 Richard R. Garnache
- 👤 Donald M. Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:29
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/025; H10D64/027; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
232 words
The method of providing a conductive electrode for a semiconductor device comprising the steps of: providing a semiconductor substrate having a surface containing at least one recessed groove to which an electrode is to be provided; depositing a substantially uniform layer of electrode forming material over at least a portion of said surface including all of said groove; dispensing a layer of mask-forming organic material over said layer of electrode forming material and said surface to a depth sufficient to provide a substantially planar upper surface; heating said substrate to harden said layer of mask-forming organic material; selectively etching said layer of organic material in preference to said electrode forming material to a depth below the level of the surface of said substrate to expose the portion of said layer of electrode forming material outside of the area of said groove; applying a blocking mask over at least a part of said exposed layer of electrode forming material adjacent to, and extending over one end of the area of said groove; selectively etching and removing said layer of electrode forming material in preference to said masking material and said blocking mask to provide an electrode on said substrate having a first etch-defined portion terminating within said groove below said surface of said substrate and a second connected portion remaining on said surface; and removing both said masking material and said blocking mask.
Claim 2
Independent Claim
232 words
The method of providing a conductive electrode for a semiconductor device comprising the steps of: providing a semiconductor substrate having a surface containing at least one recessed groove to which an electrode is to be provided; depositing a substantially uniform layer of electrode forming material over at least a portion of said surface including all of said groove; dispensing a layer of mask-forming organic material over said layer of electrode forming material and said surface to a depth sufficient to provide a substantially planar upper surface; heating said substrate to harden said layer of mask-forming organic material; selectively etching said layer of organic material in preference to said electrode forming material to a depth below the level of the surface of said substrate to expose the portion of said layer of electrode forming material outside of the area of said groove; applying a blocking mask over at least a part of said exposed layer of electrode forming material adjacent to, and extending over one end of the area of said groove; selectively etching and removing said layer of electrode forming material in preference to said masking material and said blocking mask to provide an electrode on said substrate having a first etch-defined portion terminating within said groove below said surface of said substrate and a second connected portion remaining on said surface; and removing both said masking material and said blocking mask.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said recessed groove is formed by a directionally dependent etching process.
Claim 4
Dependent Claim
16 words
The method of claim 2 wherein said directionally dependent etching process is an anisotropic etching process.
Claim 5
Dependent Claim
13 words
The method of claim 3 wherein said groove is substantially V-shaped in cross-section.
Claim 6
Dependent Claim
13 words
The method of claim 2 wherein said groove is substantially rectangular in cross-section.
Claim 7
Dependent Claim
15 words
The method of claim 5 wherein said directionally dependent etching process comprises a sputtering step.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said electrode forming material comprises a metal.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said electrode forming material comprises polycrystalline silicon.
Claim 10
Dependent Claim
69 words
The method of claim 1 wherein the step of providing said substrate further comprises the steps of: providing a silicon semiconductor substrate of a predetermined conductivity type; forming a first dielectric layer on said first surface of said silicon semiconductor substrate; providing at least one opening in said dielectric layer to expose a region of said first surface; and anisotropically etching said exposed region to form said groove therein.
Claim 11
Dependent Claim
25 words
The method of claim 9 wherein the step of anisotropically etching is followed by the step of: providing a second dielectric layer within said groove.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-19 | 1985-04-20 | 1985-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-19 | 1989-04-20 | 1989-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-19 | 1993-04-20 | 1993-10-20 | $7700.00 | Window Closed / Lapsed |