US4222816A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing parasitic capacitance in integrated circuit structures
Assignee: International Business Machines Corp
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Filing: 1978-12-26
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Granted: 1980-09-16
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Expires: 1998-12-26
Abstract
Abstract A method for reducing parasitic capacitance in semiconductor devices, particularly for the removal of raised portions of conductive layers overlying and capable of being capacitively coupled to other conductors in semiconductor memory integrated circuits. The method provides for the application of a masking or photoresist layer over the surface of a substrate containing portions of a conductor to be removed such that the masking layer completely covers the conductor. Next a uniform thickness of the masking layer is removed to expose only the raised portions of the conductor which are subsequently selectively etched through the remainder of the masking layer. Application of the method to a manufacturing process for a dynamic MOSFET memory array is also described in which bit sense line capacitance is substantially reduced.
Inventors
- 👤 Wendell P. Noble, Jr.
- 👤 Richard A. Unis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:41
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10B; H10B12/00; H10B12/30; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/40; H10W20/495; H10W72/00; Y; Y10; Y10S; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
138 words
A method of reducing the capacitance between a conductive region of a semiconductor substrate and an overlying conductive layer comprising the steps of: providing a semiconductor substrate having a conductive region on one surface thereof; said substrate having a dielectrically insulated conductive layer on said surface, the conductive layer being spaced farther from said surface over at least a portion of said conductive region than over adjacent portions of said surface; applying a layer of masking material over said conductive layer to provide a substantially planar upper surface of said masking material; uniformly removing a portion of the thickness of said layer of masking material to a depth sufficient to expose only that portion of said conductive layer which lies over said portion of said conductive region of said substrate; and selectively removing said conductive layer where exposed.
Claim 2
Independent Claim
138 words
A method of reducing the capacitance between a conductive region of a semiconductor substrate and an overlying conductive layer comprising the steps of: providing a semiconductor substrate having a conductive region on one surface thereof; said substrate having a dielectrically insulated conductive layer on said surface, the conductive layer being spaced farther from said surface over at least a portion of said conductive region than over adjacent portions of said surface; applying a layer of masking material over said conductive layer to provide a substantially planar upper surface of said masking material; uniformly removing a portion of the thickness of said layer of masking material to a depth sufficient to expose only that portion of said conductive layer which lies over said portion of said conductive region of said substrate; and selectively removing said conductive layer where exposed.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said masking material comprises an organic polymer material.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said polymer comprises a photosensitive material.
Claim 5
Dependent Claim
69 words
The method of claim 3 wherein said step of uniformly removing said masking material is carried out by depthwise exposure of said masking material to a depth greater than the distance between the upper surface of said masking material and the highest portions of said conductive layer and thereafter removing said exposed portion of said masking material by a chemical developer to expose said portion of said conductive layer.
Claim 6
Dependent Claim
14 words
The method of claim 2 wherein said masking layer is uniformly removed by etching.
Claim 7
Dependent Claim
14 words
The method of claim 5 wherein etching is carried out by reactive ion etching.
Claim 8
Dependent Claim
33 words
The method of claim 1 wherein said conductive layer comprises doped polysilicon spaced from said substrate by a dielectric layer comprising a doped oxide from which said conductive region had previously been diffused.
Claim 9
Dependent Claim
34 words
The method of claim 7 wherein said semiconductor substrate includes additional conductive regions in said one surface, said polysilicon being spaced therefrom by a relatively thin dielectric layer compared with said doped oxide layer.
Claim 10
Independent Claim
211 words
A method of making a semiconductor memory device comprising the steps of: providing a semiconductor substrate of a first conductivity type; depositing a first dielectric layer containing a second conductivity type dopant on a surface of said substrate and patterning said dielectric layer to define at least two regions of said substrate in which conductive regions of opposite conductivity type are desired; causing said second conductivity type dopant to diffuse from said patterned dielectric layer to form at least two regions of said second conductivity type in said substrate; selectively removing at least some of said patterned layer from said substrate, while retaining at least some of said patterned layer; providing a second dielectric layer over at least those regions of said substrate not containing retained regions of said patterned layer, said second dielectric layer being thinner than said first dielectric layer; providing a conductive layer of substantially uniform thickness over said first and second dielectric layers; applying a masking layer over said conductive layer having a substantially planar upper surface; uniformly removing a portion of the thickness of said masking layer to a depth sufficient to expose only said conductive layer where said conductive layer lies over said first dielectric layer; and selectively removing exposed portions of said conductive layer.
Claim 11
Independent Claim
211 words
A method of making a semiconductor memory device comprising the steps of: providing a semiconductor substrate of a first conductivity type; depositing a first dielectric layer containing a second conductivity type dopant on a surface of said substrate and patterning said dielectric layer to define at least two regions of said substrate in which conductive regions of opposite conductivity type are desired; causing said second conductivity type dopant to diffuse from said patterned dielectric layer to form at least two regions of said second conductivity type in said substrate; selectively removing at least some of said patterned layer from said substrate, while retaining at least some of said patterned layer; providing a second dielectric layer over at least those regions of said substrate not containing retained regions of said patterned layer, said second dielectric layer being thinner than said first dielectric layer; providing a conductive layer of substantially uniform thickness over said first and second dielectric layers; applying a masking layer over said conductive layer having a substantially planar upper surface; uniformly removing a portion of the thickness of said masking layer to a depth sufficient to expose only said conductive layer where said conductive layer lies over said first dielectric layer; and selectively removing exposed portions of said conductive layer.
Claim 12
Dependent Claim
36 words
The method of claim 9 wherein said opposite conductivity regions under retained regions of said patterned first dielectric layer correspond to bit sense lines of a memory array circuit and wherein said conductive layer comprises polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-16 | 1984-03-17 | 1984-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-16 | 1988-03-17 | 1988-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-16 | 1992-03-17 | 1992-09-16 | $7700.00 | Window Closed / Lapsed |