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US4697202A
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Integrated circuit having dislocation free substrate
Assignee: SRI International Inc
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Filing: 1984-02-02
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Granted: 1987-09-29
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Expires: 2004-02-02
Abstract
Abstract An integrated circuit bulk substrate having a zinc blende or Wurtzite crystalline structure is alloyed with a material having atoms that replace atoms of the host semiconductor. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the bond length of the host atoms. The number of bonded alloyed atoms is small compared to the number of host atoms so as not to substantially affect electronic conduction properties of the host material, but is large enough to virtually eliminate dislocations over a large surface area and volume of the host material on which active semiconductor devices are located.
Inventors
- 👤 Arden Sher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:23
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10D62/82; H10D62/826; H10D62/83; H10D62/832; H10D62/834; H10D62/852; H10D62/86; H10D62/862; Y; Y10; Y10S; Y10S438/00; Y10S438/93
Claims Analysis
Total Claims: 181
Claim 1
Independent Claim
249 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 2
Dependent Claim
249 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 3
Dependent Claim
33 words
The circuit structure of claim 1 wherein the host semiconductor material is a Group IV pseudo elemental semiconductor and the alloyed atoms are a Group IV semiconductor element different from the host element.
Claim 4
Dependent Claim
35 words
The circuit structure of claim 2 wherein the pseudo elemental semiconductor selected from the group consisting of Si, Ge and Sn and the alloyed atoms are selected from the group consisting of C and Si.
Claim 5
Dependent Claim
31 words
The circuit structure of claim 3 wherein the host pseudo elemental semiconductor is selected from the group consisting of Ge 1-x Sn x and Si 1-x Ge x , where 0<x<1.
Claim 6
Dependent Claim
81 words
The circuit structure of claim 1 wherein the host semiconductor material is a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material.
Claim 7
Dependent Claim
59 words
The circuit structure of claim 5 wherein the alloy is a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms.
Claim 8
Dependent Claim
37 words
The circuit structure of claim 6 wherein the host semiconductor material and the alloy semiconductor compound are different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound.
Claim 9
Dependent Claim
60 words
The circuit structure of claim 5 wherein the host and alloyed semiconductors form a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3.
Claim 10
Dependent Claim
39 words
The circuit structure of claim 8 wherein the host semiconductor consists essentially of GaAs and the formed host and alloyed semiconductor is selected from the group consisting essentially of GaAs 1-y P y and GaAs 1-y N y .
Claim 11
Dependent Claim
54 words
The circuit structure of claim 5 wherein the host and alloyed semiconductors form a semiconductor compound of the form M 1-x Q x R, where M and Q are cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, and 0.01<x<0.3.
Claim 12
Dependent Claim
402 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 13
Dependent Claim
402 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 14
Dependent Claim
403 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom types that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 15
Dependent Claim
403 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom types that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 16
Dependent Claim
385 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming conjunctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 17
Dependent Claim
385 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming conjunctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 18
Dependent Claim
383 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 19
Dependent Claim
383 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 20
Dependent Claim
398 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 21
Dependent Claim
398 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 22
Dependent Claim
311 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 23
Dependent Claim
311 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 24
Dependent Claim
46 words
The circuit structure of claim 16 wherein the third atoms replace some of the atoms of the second type to form the further bonds with the atoms of the first type and the fourth atoms replace some of the third atoms to form the additional bonds.
Claim 25
Dependent Claim
81 words
The circuit structure of claim 17 wherein the host is MA and the third and fourth atoms are Q and R, and the formed and alloyed compound is M 1-x Q x A 1-y R y , where M and A are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, Q and R are respectively in at least one of said first and second columns, y>x, x>0, and x+y<0.3.
Claim 26
Dependent Claim
23 words
The circuit structure of claim 18 wherein the first and second columns are respectively the third and fifth columns of the periodic chart.
Claim 27
Dependent Claim
32 words
The circuit structure of claim 17 wherein the host is GaAs and the formed and alloyed compound is Ga 1-x B x As 1-y P y , where Y>x, x+y<0.3 and x>0.
Claim 28
Dependent Claim
46 words
The circuit structure of claim 16 wherein the third atoms replace some of the atoms of the second type to form the further bonds with the atoms of the first type and the fourth atoms replace some of the second atoms to form the additional bonds.
Claim 29
Dependent Claim
72 words
The circuit structure of claim 21 wherein the host is MA and the third and fourth atoms are Q and R, and the formed and alloyed compound is MQ 1-y-z A y R z , where M and A are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, Q and R are in the second column, y>z, z>0, and z+y<0.3.
Claim 30
Dependent Claim
23 words
The circuit structure of claim 22 wherein the first and second columns are respectively the third and fifth columns of the periodic chart.
Claim 31
Dependent Claim
29 words
The circuit structure of claim 21 wherein the host is GaAs and the formed and alloyed compound is GaAs 1-y-z P y N z , where y>z, z>0, y+z<0.3.
Claim 32
Dependent Claim
311 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three compounds of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-x A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 33
Dependent Claim
311 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three compounds of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-x A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 34
Dependent Claim
23 words
The circuit structure of claim 25 wherein said first and second columns are respectively the third and fifth columns of the periodic chart.
Claim 35
Dependent Claim
50 words
The circuit structure of claim 25 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound is selected from the group comprising Ga 1-x In x Sb 1-y N y and Ga 1-x In x Sb 1-y P y , where y>x, x+y<0.3 and x>0.
Claim 36
Dependent Claim
23 words
The circuit structure of claim 25 wherein said first and second columns are respectively the second and sixth columns of the periodic chart.
Claim 37
Dependent Claim
45 words
The circuit structure of claim 28 wherein the host is Hg 1-x Cd x Te and the formed and alloyed compound is selected from the group comprising Hg 1-x Cd x Te 1-y S y and Hg 1-x Cd x Te 1-y Se y .
Claim 38
Dependent Claim
307 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three compounds of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A.sub. x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 39
Dependent Claim
307 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three compounds of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A.sub. x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 40
Dependent Claim
23 words
The circuit structure of claim 30 wherein said first and second columns are respectively the third and fifth columns of the periodic chart.
Claim 41
Dependent Claim
34 words
The circuit structure of claim 30 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound comprises Ga 1-x-y In x B y Sb, where y>x, x+y<0.3 and x>0.
Claim 42
Dependent Claim
289 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having spaced semiconductor regions forming junctions with the epitaxial layer and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 43
Dependent Claim
289 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having spaced semiconductor regions forming junctions with the epitaxial layer and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 44
Dependent Claim
277 words
A power transistor structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being GaP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being nitrogen to form the substrate as the alloy consisting of GaP 1-y N y , where 0.01<y<0.1, said large surface area and volume of the host material including a plurality of spaced doped regions in the substrate to form plural junctions between the regions and the substrate, a control electrode positioned relative to the substrate and the spaced regions for controlling the conductivity between adjacent pairs of said spaced regions, and an electrode connected to each of said spaced regions.
Claim 45
Dependent Claim
277 words
A power transistor structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being GaP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being nitrogen to form the substrate as the alloy consisting of GaP 1-y N y , where 0.01<y<0.1, said large surface area and volume of the host material including a plurality of spaced doped regions in the substrate to form plural junctions between the regions and the substrate, a control electrode positioned relative to the substrate and the spaced regions for controlling the conductivity between adjacent pairs of said spaced regions, and an electrode connected to each of said spaced regions.
Claim 46
Dependent Claim
292 words
A power transistor structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being AlP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of B and Al to form the substrate as the alloy respectively consisting of Al 1-x B.sub. x P, or AlP 1-y N y , where 0.01<x<0.1, and 0.01<y<0.1, said large surface area of the host material including a plurality of doped spaced regions in the substrate to form plural junctions between the regions and the substrate, a control electrode positioned relative to the substrate and the spaced regions for controlling the conductivity between adjacent pairs of said spaced regions, and an electrode connected to each of said spaced regions.
Claim 47
Dependent Claim
292 words
A power transistor structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being AlP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of B and Al to form the substrate as the alloy respectively consisting of Al 1-x B.sub. x P, or AlP 1-y N y , where 0.01<x<0.1, and 0.01<y<0.1, said large surface area of the host material including a plurality of doped spaced regions in the substrate to form plural junctions between the regions and the substrate, a control electrode positioned relative to the substrate and the spaced regions for controlling the conductivity between adjacent pairs of said spaced regions, and an electrode connected to each of said spaced regions.
Claim 48
Dependent Claim
276 words
A high speed room temperature integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being InP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of Ga, Al, B and In to form the substrate as the alloy respectively consisting of In 1-x Ga x P, or IN 1-x Al x P, or In 1-x B x P, or InP 1-y N y , where 0.01≦x≦0.3, 0.01≦y≦0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode between pairs of said spaced regions.
Claim 49
Dependent Claim
276 words
A high speed room temperature integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being InP having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of Ga, Al, B and In to form the substrate as the alloy respectively consisting of In 1-x Ga x P, or IN 1-x Al x P, or In 1-x B x P, or InP 1-y N y , where 0.01≦x≦0.3, 0.01≦y≦0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode between pairs of said spaced regions.
Claim 50
Dependent Claim
262 words
A high speed room temperature integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor mateiral consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being GaAs having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of P, N, B to form the substrate as the alloy respectively consisting of GaAs 1-y P y , or GaAs 1-y N y , or Ga 1-x B x As, where 0.01≦x<0.3, 0.01<y<0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode.
Claim 51
Dependent Claim
262 words
A high speed room temperature integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor mateiral consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being GaAs having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of P, N, B to form the substrate as the alloy respectively consisting of GaAs 1-y P y , or GaAs 1-y N y , or Ga 1-x B x As, where 0.01≦x<0.3, 0.01<y<0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode.
Claim 52
Dependent Claim
273 words
A microwave integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being InSb having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the post material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of Ga, P, N and B to form the substrate as the alloy respectively consisting of In 1-x Ga x Sb, or InSb 1-y P y , or InSb 1-y N y , or In 1-x B x Sb, where 0.01≦x≦0.3, 0.01≦y≦0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode between pairs of said spaced regions.
Claim 53
Dependent Claim
273 words
A microwave integrated circuit comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the host semiconductor being InSb having a first predetermined conductivity type, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the post material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host material being sufficient to accommodate at least several active semiconductor devices, the alloy atoms for the host semiconductor being selected from the group consisting of Ga, P, N and B to form the substrate as the alloy respectively consisting of In 1-x Ga x Sb, or InSb 1-y P y , or InSb 1-y N y , or In 1-x B x Sb, where 0.01≦x≦0.3, 0.01≦y≦0.3, said large surface area of the host material including several transistors, each having spaced doped regions in the substrate and a control electrode between pairs of said spaced regions.
Claim 54
Dependent Claim
307 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate and epitaxial layer formed by the host and alloy each consists essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having spaced semiconductor regions forming junctions with the epitaxial layer and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 55
Dependent Claim
307 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate and epitaxial layer formed by the host and alloy each consists essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having spaced semiconductor regions forming junctions with the epitaxial layer and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 56
Dependent Claim
289 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge.sub. x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 57
Dependent Claim
289 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge.sub. x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 58
Dependent Claim
408 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 59
Dependent Claim
408 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 60
Dependent Claim
407 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group consisting essentially of BP and AlN, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 61
Dependent Claim
407 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group consisting essentially of BP and AlN, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 62
Dependent Claim
391 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 63
Dependent Claim
391 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 64
Dependent Claim
381 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the most material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 65
Dependent Claim
381 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the most material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 66
Dependent Claim
378 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups IV and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 67
Dependent Claim
378 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups IV and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 68
Dependent Claim
379 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 69
Dependent Claim
379 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 70
Dependent Claim
390 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 71
Dependent Claim
390 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 72
Dependent Claim
263 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 73
Dependent Claim
263 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 74
Dependent Claim
258 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 75
Dependent Claim
258 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having: spaced semiconductor regions forming junctions with the host material and an electrically responsive control electrode for controlling electric conduction between an adjacent pair of said spaced regions.
Claim 76
Dependent Claim
268 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge.sub. x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 77
Dependent Claim
268 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge.sub. x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 78
Dependent Claim
388 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 79
Dependent Claim
388 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 80
Dependent Claim
386 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group comsisting essentially of BP and AlN, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 81
Dependent Claim
386 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group comsisting essentially of BP and AlN, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 82
Dependent Claim
370 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 83
Dependent Claim
370 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 84
Dependent Claim
360 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 85
Dependent Claim
360 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 86
Dependent Claim
357 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 87
Dependent Claim
357 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 88
Dependent Claim
358 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 89
Dependent Claim
358 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 90
Dependent Claim
369 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 91
Dependent Claim
369 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 92
Dependent Claim
382 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 93
Dependent Claim
382 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 94
Dependent Claim
382 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 95
Dependent Claim
382 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 96
Dependent Claim
364 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 97
Dependent Claim
364 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 98
Dependent Claim
362 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 99
Dependent Claim
362 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 100
Dependent Claim
377 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 101
Dependent Claim
377 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 102
Dependent Claim
290 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 103
Dependent Claim
290 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 104
Dependent Claim
50 words
The circuit structure of claim 63 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound is selected from the group comprising Ga 1-x In x Sb 1-y N y and Ga 1-x In x Sb 1-y P y , where y>x, x+y<0.3 and x>0.
Claim 105
Dependent Claim
45 words
The circuit structure of claim 63 wherein the host is Hg 1-x Cd x Te and the formed and alloyed compound is selected from the group comprising Hg 1-x Cd x Te 1-y S y and Hg 1-x Cd x Te 1-y Se y .
Claim 106
Dependent Claim
242 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 107
Dependent Claim
242 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 108
Dependent Claim
290 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-x A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 109
Dependent Claim
290 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-x A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 110
Dependent Claim
286 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A.sub. x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 111
Dependent Claim
286 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A.sub. x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+y<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 112
Dependent Claim
34 words
The circuit structure of claim 68 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound comprises Ga 1-x-y In x B y Sb, where y>x, x+y<0.3 and x>0.
Claim 113
Dependent Claim
242 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 114
Dependent Claim
242 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 115
Dependent Claim
237 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 116
Dependent Claim
237 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several semiconductor devices, and at least several semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 117
Dependent Claim
280 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 118
Dependent Claim
280 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 119
Dependent Claim
302 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 120
Dependent Claim
302 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline Group IV pseudo elemental host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the alloyed semiconductor atoms being selected from the group consisting essentially of Si and C, the formed bulk and alloyed semiconductors being selected from the group consisting essentially of Si 1-x-y Ge x C y , Ge 1-x-y Sn x C y , and Ge 1-x-y Sn x Si y , where 0<x<1, 0<y<0.2, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 121
Dependent Claim
431 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, and epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 122
Dependent Claim
431 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being InSb and the alloyed compound being selected from the group consisting essentially of GaSb, InP, InN and BSb, and epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 123
Dependent Claim
429 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group consisting essentially of BP and AlN, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 124
Dependent Claim
429 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the alloy being a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms, the host semiconductor material and the alloy semiconductor compound being different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound, the host compound being AlP and the alloyed compound being selected from the group consisting essentially of BP and AlN, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 125
Dependent Claim
413 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 126
Dependent Claim
413 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InSb and the formed host and alloyed semiconductor being selected from the group consisting essentially of InSb 1-y P y and of InSb 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 127
Dependent Claim
403 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 128
Dependent Claim
403 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductor being InP 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 129
Dependent Claim
400 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 130
Dependent Claim
400 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of AlP and the formed host and alloyed semiconductor being AlP 1-y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 131
Dependent Claim
401 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 132
Dependent Claim
401 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of GaP and the formed host and alloyed semiconductor being GaP 1 -y N y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 133
Dependent Claim
412 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 134
Dependent Claim
412 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3, the host semiconductor consisting essentially of HgTe and the formed host and alloyed semiconductor being selected from the group consisting essentially of HgTe 1-y Se y and HgTe 1-y S y , an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 135
Dependent Claim
425 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 136
Dependent Claim
425 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of In 1-x Ga x P, In 1-x Al x P and In 1-x B x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 137
Dependent Claim
425 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 138
Dependent Claim
425 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of InP and the semiconductor formed by the host and alloyed semiconductors being formed from the group consisting essentially of In 1-x B x P, In 1-x Al x P and In 1-x Ga x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 139
Dependent Claim
407 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 140
Dependent Claim
407 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of AlP and the semiconductor formed by the host and alloyed semiconductors being Al 1-x B x P, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 141
Dependent Claim
405 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virturally free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 142
Dependent Claim
405 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor being GaAs and the semiconductor formed by the host and alloyed semiconductors being Ga 1-x B x As, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virturally free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 143
Dependent Claim
420 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 144
Dependent Claim
420 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material, the host and alloyed semiconductors forming a semiconductor compound of the form M 1-x Q x R, where M and Q are respectively anions and cations selected from the semiconductors of Groups II and III and R is selected from the semiconductors of Groups VI and V, respectively, Q is an element having an anion, and 0.01<x<0.3, the host semiconductor consisting essentially of HgTe and the semiconductor formed by the host and alloyed semiconductors being formed of the group consisting essentially of Hg 1-x Zn x Te and Hg 1-x Mg x Te, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 145
Dependent Claim
333 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate disclocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said device having semiconductor regions forming junctions with the epitaxial layer.
Claim 146
Dependent Claim
333 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate disclocations over a large surface area and volume of the host material, the host semiconductor material being a pseudo binary compound of first and second types of atoms, bonds between the first and second types of atoms having the known bond length, the alloyed atoms including third and fourth atoms to form further and additional bonds with the one atom type of the host, the further bonds having lengths that are shorter than the known host bond lengths, the additional bonds having lengths that are shorter than lengths of the further bonds, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said device having semiconductor regions forming junctions with the epitaxial layer.
Claim 147
Dependent Claim
50 words
The circuit structure of claim 86 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound is selected from the group comprising Ga 1-x In x Sb 1-y N y and Ga 1-x In x Sb 1-y P y , where y>x, x+y<0.3 and x>0.
Claim 148
Dependent Claim
45 words
The circuit structure of claim 86 wherein the host is Hg 1-x Cd x Te and the formed and alloyed compound is selected from the group comprising Hg 1-x Cd x Te 1-y S y and Hg 1-x Cd x Te 1-y Se y .
Claim 149
Dependent Claim
285 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 150
Dependent Claim
285 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 151
Dependent Claim
333 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-z A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 152
Dependent Claim
333 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q that is alloyed with R to form the alloyed compound M 1-z A x Q 1-y R y , where M and Q are elements in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A is in said first column and R is in said second column, y>x, x>0, and x+y<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 153
Dependent Claim
330 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+ y<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 154
Dependent Claim
330 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material the host being a pseudo binary crystal consisting of three elements of the form M 1-x A x Q, the pseudo binary crystal being alloyed with R to form the alloyed compound M 1-x-y A x R y Q, where M and Q are semiconductors in equally displaced and oppositely directed first and second columns of the periodic chart relative to the fourth column, A and R are in the first column, y>x, x>0, and x+ y<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 155
Dependent Claim
34 words
The circuit structure of claim 91 wherein the host is Ga 1-x In x Sb and the formed and alloyed compound comprises Ga 1-x-y In x B y Sb, where y>x, x+y<0.3 and x>0.
Claim 156
Dependent Claim
285 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 157
Dependent Claim
285 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, the host semiconductor consisting essentially of HgTe and the alloy semiconductor is Zn and the substrate formed by the host and alloy consisting essentially of Hg 1-x Zn x Te, where 0.01≦x<0.3, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 158
Dependent Claim
280 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 159
Dependent Claim
280 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the host being Hg 1-x Cd x Te and the formed and alloyed compound being Hg 1-x-y Cd x Zn y Te, where y>x, x>0, and x+y<0.3, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices, and at least several semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 160
Dependent Claim
230 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 161
Dependent Claim
230 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area and volume of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, the large surface and volume of the host semiconductor material being sufficient to accommodate at least several active semiconductor devices, and at least several active semiconductor devices located on said large surface area and volume of the host semiconductor material, each of said devices having semiconductor regions forming junctions with the host material.
Claim 162
Dependent Claim
33 words
The circuit structure of claim 95 wherein the host semiconductor material is a Group IV pseudo elemental semiconductor and the alloyed atoms are a Group IV semiconductor element different from the host element.
Claim 163
Dependent Claim
36 words
The circuit structure of claim 96 wherein the pseudo elemental semiconductor is selected from the group consisting of Si, Ge and Sn and the alloyed atoms are selected from the group consisting of C and Si.
Claim 164
Dependent Claim
31 words
The circuit structure of claim 97 wherein the host pseudo elemental semiconductor is selected from the group consisting of Ge 1-x Sn x and Si 1-x Ge x , where 0<x<1.
Claim 165
Dependent Claim
81 words
The circuit structure of claim 95 wherein the host semiconductor material is a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material.
Claim 166
Dependent Claim
59 words
The circuit structure of claim 99 wherein the alloy is a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms.
Claim 167
Dependent Claim
37 words
The circuit structure of claim 100 wherein the host semiconductor material and the alloy semiconductor compound are different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound.
Claim 168
Dependent Claim
60 words
The circuit structure of claim 99 wherein the host and alloyed semiconductors form a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3.
Claim 169
Dependent Claim
39 words
The circuit structure of claim 102 wherein the host semiconductor consists essentially of GaAs and the formed host and alloyed semiconductor is selected from the group consisting essentially of GaAs 1-y P y and GaAs 1-y N y .
Claim 170
Dependent Claim
56 words
The circuit structure of claim 99 wherein the host and alloyed semiconductors form a semiconductor compound of the form M 1-x Q x R, where M and Q are cations selected from the semiconductors of Group II and III and R is an anion selected from the semiconductors of Groups VI and V, respectively, and 0.01<x<0.3.
Claim 171
Dependent Claim
270 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 172
Dependent Claim
270 words
A semiconductor circuit structure comprising a bulk substrate formed of a tetrahedral structured crystalline host semiconductor material consisting essentially of bonded host atoms bonded at least by covalent and metallic forces, the bonded atoms of the host semiconductor material nearest to each other having a known bond length, the host semiconductor material being alloyed with alloy atoms that replace some of the atoms of the host semiconductor material so that the alloy atoms and host atoms are bonded at least by covalent and metallic forces, the alloy atoms having a bond length with the nearest neighboring host atoms that is less than the known host bond length, the number of bonded alloy atoms being small compared to the number of bonded host atoms so as not to substantially affect electron conduction properties of the host material, the number of bonded alloy atoms being sufficient to virtually eliminate dislocations over a large surface area of the host material so that there is at least one atomic percent of the bonded alloy atoms in the bulk substrate, an epitaxial layer on said large surface area of the host material, the epitaxial layer being formed of the same host semiconductor and alloyed in the same manner by the same alloy atoms as the bulk substrate to form a region having a large surface and volume virtually free of dislocations, the large surface and volume of the epitaxial layer being sufficient to accommodate at least several active semiconductor devices and at least several active semiconductor devices located on said epitaxial layer, each of said devices having semiconductor regions forming junctions with the epitaxial layer.
Claim 173
Dependent Claim
33 words
The circuit structure of claim 105 wherein the host semiconductor material is a Group IV pseudo elemental semiconductor and the alloyed atoms are a Group IV semiconductor element different from the host element.
Claim 174
Dependent Claim
36 words
The circuit structure of claim 106 wherein the pseudo elemental semiconductor is selected from the group consisting of Si, Ge and Sn and the alloyed atoms are selected from the group consisting of C and Si.
Claim 175
Dependent Claim
31 words
The circuit structure of claim 107 wherein the host pseudo elemental semiconductor is selected from the group consisting of Ge 1-x Sn x and Si 1-x Ge x , where 0<x<1.
Claim 176
Dependent Claim
81 words
The circuit structure of claim 105 wherein the host semiconductor material is a pseudo binary compound of first and second types of atoms between which subsist the host material bonds having the known bond length, the alloy including third atoms of the second atom type that replace some of the atoms of the second type to form bonds with the first types of atoms having the bond length that is less than bond lengths of the atoms of the host material.
Claim 177
Dependent Claim
59 words
The circuit structure of claim 109 wherein the alloy is a pseudo binary semiconductor compound of the first type of atom and of the third atoms, the alloy having a bond length between the first type of atoms and the third atoms less than the bond lengths of the host material between the first and second types of atoms.
Claim 178
Dependent Claim
37 words
The circuit structure of claim 110 wherein the host semiconductor material and the alloy semiconductor compound are different III-V compounds, the bond length of the alloyed compound being less than the bond length of the host compound.
Claim 179
Dependent Claim
60 words
The circuit structure of claim 109 wherein the host and alloyed semiconductors form a semiconductor compound of the form MQ 1-y R y , where M is selected from the semiconductors of Groups II and III and Q and R are selected from the semiconductors of Groups VI and V, respectively, R is an element having a cation, and 0.01<y<0.3.
Claim 180
Dependent Claim
39 words
The circuit structure of claim 112 wherein the host semiconductor consists essentially of GaAs and the formed host and alloyed semiconductor is selected from the group consisting essentially of GaAs 1-y P y and GaAs 1-y N y .
Claim 181
Dependent Claim
54 words
The circuit structure of claim 109 wherein the host and alloyed semiconductors form a semiconductor compound of the form M 1-x Q x R, where M and Q are cations selected from the semiconductors of Group II and III and R is selected from the semiconductors of Groups VI and V, respectively, and 0.01<x<0.3.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |