US3617820A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Injection-luminescent diodes
Assignee: Monsanto Co
•
Filing: 1966-11-18
•
Granted: 1971-11-02
•
Expires: 1986-11-18
Abstract
Abstract This disclosure relates to injection-luminescent diodes of gallium arsenide, gallium phosphide and mixed binary crystals thereof having the formula GaAsxP1 x, where x is a numerical value greater than zero and less than one, said diodes having an N-type conductivity region doped to a carrier concentration of from 1015 to 1019 carriers/cc. of N-type impurity atoms and a substantially linearly graded PN junction merging with a radiative recombination band which extends from about 5 to 25 microns into a region of P-type conductivity and is doped with Ptype impurity atoms to a carrier concentration of about 4 X 1019 carriers/cc. at the distal edge of said band from the PN junction. The injection-luminescent diodes of this invention are produced by a diffusion process.
Inventors
- 👤 Arno Henry Herzog
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/067; Y10S148/119
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
12 words
Composition according to claim 1 wherein said injection-luminescent material is gallium phosphide.
Claim 2
Dependent Claim
27 words
Composition according to claim 1 wherein said injection-luminescent material is gallium arsenide phosphide, GaAsxP1*x, where x is a numerical value greater than zero and less than one.
Claim 3
Dependent Claim
27 words
Composition according to claim 1 wherein said radiation recombination band extends from about 8 to 17 microns above the PN junction into said region of P-type conductivity.
Claim 4
Dependent Claim
128 words
As an article of manufacture an injection-luminescent diode comprising a body selected from the group consisting of single crystal, gallium phosphide and mixed single crystals thereof with gallium arsenide and having the formula GaAsxP1 x where x is a numerical value greater than zero and less than one and having a region of N-type conductivity doped to a carrier concentration of from 1015 to 1019 atoms/cc. of N-type impurity atoms, a substantially linear graded PN junction merging with a radiative recombination band which extends up to about 25 microns into a region of P-type conductivity and is doped with zinc to a carrier concentration of about 4 X 1019 atoms/cc. along the distal edge from said PN junction and electrical leads attached to said N-and P-type conductivity regions.
Claim 5
Dependent Claim
11 words
Article according to claim 5 wherein said body is gallium phosphide.
Claim 6
Dependent Claim
27 words
Article according to claim 5 wherein said body is gallium arsenide phosphide, GaAsxP1 x, where x is a numerical value greater than zero and less than one.
Claim 7
Dependent Claim
26 words
Article according to claim 5 wherein said recombination band extendS from about 8 to 17 microns above the PN junction into said region of P-type conductivity.
Claim 8
Dependent Claim
147 words
As an article of manufacture an injection-luminescent diode comprising a body selected from the group consisting of gallium phosphide and mixed crystals thereof with gallium arsenide having the formula GaAsxP1 x, where x is a numerical value greater than zero and less than one and having a region of N-type conductivity doped to a carrier concentration of from 1015 to 1019 atoms/cc. of N-type impurity atoms, a graded PN junction merging with a radiative recombination band which extends from 5 to 25 microns into a region of P-type conductivity wherein the distal edge of said band from said PN junction is doped to a carrier concentration of about 4 X 1019 atoms/cc. of P-type impurities and forms a P P junction with a P -type region having a surface concentration of about 1020 atoms/cc. of P-type impurities and electrical leads attached to said N-and P -type regions.
Claim 9
Dependent Claim
26 words
Article according to claim 9 wherein said radiative recombination band extends from 8 to 17 microns above said PN junction into said region of P-type conductivity.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-01 | 1975-05-03 | 1975-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-01 | 1979-05-03 | 1979-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-01 | 1983-05-03 | 1983-11-02 | $7700.00 | Window Closed / Lapsed |