US4165471A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical sensor apparatus
Assignee: Eastman Kodak Co
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Filing: 1977-07-25
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Granted: 1979-08-21
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Expires: 1997-07-25
Abstract
Abstract A light sensing apparatus is described which employs a GaAsP MOS light-receiving element to which a potential is applied for creating a depletion region. Upon exposure, minority carriers are generated and trapped. Light levels are sensed by a charge injection technique which results in a characteristic charge or voltage, the magnitude of which is proportional to the total exposure during the sensing period.
Inventors
- 👤 Richard K. Ahrenkeil
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:29
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
Light sensing metal-oxide-semiconductor (MOS) apparatus comprising: (a) a bulk of impurity-doped GaAsP; (b) an electrically nonconductive natively-grown oxide of GaAsP covering part of said bulk; (c) electrically conductive means covering at least part of said electrically nonconductive oxide of GaAsP, thereby to form a capacitor comprised of said bulk, said electrically nonconductive oxide, and said electrically conductive means, said oxide and said electrically conductive means being adapted to allow light to enter said bulk;
Claim 2
Dependent Claim
74 words
Light sensing metal-oxide-semiconductor (MOS) apparatus comprising: (a) a bulk of impurity-doped GaAsP; (b) an electrically nonconductive natively-grown oxide of GaAsP covering part of said bulk; (c) electrically conductive means covering at least part of said electrically nonconductive oxide of GaAsP, thereby to form a capacitor comprised of said bulk, said electrically nonconductive oxide, and said electrically conductive means, said oxide and said electrically conductive means being adapted to allow light to enter said bulk;
Claim 3
Dependent Claim
97 words
(d) means for applying a bias voltage to said conductive means for depleting majority carriers from the interface between said electrically nonconductive oxide and said bulk; (e) means for applying a voltage pulse to said electrically conductive means, said pulse being of a polarity to inject majority carriers into the depletion region; (f) an electrical conductor in contact with said bulk; and (g) means cooperative with said conductor for measuring the quantity of said injected carriers, said GaAsP being of the form GaAs 1-x P x , and wherein x is a number between 0.3 and 0.5.
Claim 4
Dependent Claim
97 words
(d) means for applying a bias voltage to said conductive means for depleting majority carriers from the interface between said electrically nonconductive oxide and said bulk; (e) means for applying a voltage pulse to said electrically conductive means, said pulse being of a polarity to inject majority carriers into the depletion region; (f) an electrical conductor in contact with said bulk; and (g) means cooperative with said conductor for measuring the quantity of said injected carriers, said GaAsP being of the form GaAs 1-x P x , and wherein x is a number between 0.3 and 0.5.
Claim 5
Dependent Claim
26 words
The apparatus of claim 1 wherein said GaAsP is of the form GaAs 1-x P x and wherein x is a number about equal to 0.4.
Claim 6
Dependent Claim
43 words
Apparatus of claim 1 wherein said measuring means is a circuit for measuring the change in the capacitance of the capacitor formed from said GaAsP, said electrically nonconductive oxide, and said electrically conductive means as a result of pulsing said electrically conductive means.
Claim 7
Dependent Claim
180 words
Light sensing metal-oxide-semiconductor (MOS) apparatus comprising: (a) a light sensing element; (b) means for producing a bias potential; (c) means for producing a pulse having an amplitude greater than said bias potential, and of a polarity opposite to that of said bias potential, said light sensing element being comprised of GaAsP having an overlay of a transparent electrically nonconductive oxide of GaAsP and an electrically conductive element so overlaying the nonconductive overlay that light may enter said GaAsP via said nonconductive overlay; (d) means for selectively applying said bias potential and said pulse to said electrically conductive element of said light sensing element, said bias potential being sufficient to create a region within said GaAsP which is depleted of majority carriers, and said pulse is of a magnitude sufficient to inject light produced majority carriers into said depletion region; and (e) means cooperative with said light sensing element for measuring the amount of charge injected into said depletion region, said GaAsP being of the form GaAs 1-x P x , and wherein x is a number between 0.3 and 0.5.
Claim 8
Dependent Claim
180 words
Light sensing metal-oxide-semiconductor (MOS) apparatus comprising: (a) a light sensing element; (b) means for producing a bias potential; (c) means for producing a pulse having an amplitude greater than said bias potential, and of a polarity opposite to that of said bias potential, said light sensing element being comprised of GaAsP having an overlay of a transparent electrically nonconductive oxide of GaAsP and an electrically conductive element so overlaying the nonconductive overlay that light may enter said GaAsP via said nonconductive overlay; (d) means for selectively applying said bias potential and said pulse to said electrically conductive element of said light sensing element, said bias potential being sufficient to create a region within said GaAsP which is depleted of majority carriers, and said pulse is of a magnitude sufficient to inject light produced majority carriers into said depletion region; and (e) means cooperative with said light sensing element for measuring the amount of charge injected into said depletion region, said GaAsP being of the form GaAs 1-x P x , and wherein x is a number between 0.3 and 0.5.
Claim 9
Dependent Claim
26 words
The apparatus of claim 4 wherein said GaAsP is of the form GaAs 1-x P x and wherein x is a number about equal to 0.4.
Claim 10
Dependent Claim
43 words
Apparatus of claim 4 wherein said measuring means is a circuit for measuring the change in the capacitance of the capacitor formed from said GaAsP, said electrically nonconductive oxide and said electrically conductive means as a result of pulsing said electrically conductive means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-08-20 | 1983-02-19 | 1983-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-08-20 | 1987-02-19 | 1987-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-08-20 | 1991-02-19 | 1991-08-21 | $7700.00 | Window Closed / Lapsed |