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US4225409A
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Metallic modified material of intermetallic compound and a process for the production of the same
Assignee: Individual
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Filing: 1978-10-24
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Granted: 1980-09-30
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Expires: 1998-10-24
Abstract
Abstract The present invention is concerned with a new metallic modified material of intermetallic compound, which has the same chemical composition as an intermetallic compound semi-conductor with a zincblende-type or wurtzite-type crystalline structure and further has a rocksalt-type crystalline structure and which is stable at room temperature under atmospheric pressure to a high pressure.
Inventors
- 👤 Shigeru Minomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:27
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3422; Y; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
83 words
A process for the production of a metallic modified material of InSb or alloys thereof, which comprises providing a target consisting of an intermetallic compound semiconductor comprising In and Sb, said target having a zincblende-type or wurtzite-type crystalline structure, and sputtering said target to deposit a metallic modified material of InSb or alloys thereof with a rocksalt-type crystalline structure and the same chemical composition as the target on a substrate by tetrode sputtering with an anode voltage of at least around 60 V.
Claim 2
Dependent Claim
83 words
A process for the production of a metallic modified material of InSb or alloys thereof, which comprises providing a target consisting of an intermetallic compound semiconductor comprising In and Sb, said target having a zincblende-type or wurtzite-type crystalline structure, and sputtering said target to deposit a metallic modified material of InSb or alloys thereof with a rocksalt-type crystalline structure and the same chemical composition as the target on a substrate by tetrode sputtering with an anode voltage of at least around 60 V.
Claim 3
Dependent Claim
38 words
The process for the production of a metallic modified material of intermetallic compound, as claimed in claim 1 wherein the target consists of a zincblende-type semiconductor including alloying components selected from Group III elements and Group V elements.
Claim 4
Dependent Claim
46 words
The process for the production of a metallic modified material of intermetallic compound as claimed in claim 1, wherein the target consists of a combination of two kinds of semiconductors of Group III-V compounds with other Group III-V compounds, Group IV elements or Group II-VI compounds.
Claim 5
Dependent Claim
49 words
The process for the production of a metallic modified material of intermetallic compound as claimed in claim 1, wherein the deposition is carried out in the presence of at least one reactive gaseous composition comprising at least one component selected from Group II, III, IV, V and VI elements.
Claim 6
Dependent Claim
44 words
The process for the production of a metallic modified material of intermetallic compound as claimed in claim 1, wherein an alloying compound is selected from the group consisting of Group III-V compounds, Group II-VI compounds, Group I-VII compounds, Group IV-VI compounds and mixtures thereof.
Claim 7
Dependent Claim
13 words
A process according to claim 1 wherein the anode voltage is 90-150 V.
References Cited (Backward Citations)
US3979271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-30 | 1984-03-31 | 1984-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-30 | 1988-03-31 | 1988-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-30 | 1992-03-31 | 1992-09-30 | $7700.00 | Window Closed / Lapsed |