Method of epitaxial deposition of an AIII BV -semiconductor layer on a germanium substrate

Abstract

Abstract The method makes possible the manufacture of luminescence diodes on the basis of GaAsP or other ternary semiconductor layers deposited on a Ge substrate of n-type conductivity, followed by a zinc diffusion. In the method, a resist layer is deposited on the backside of the Ge substrate to passivate the backside to an extent such that it becomes thermally and chemically stable and does not release any Ge to the ambient atmosphere, and the front side of the Ge substrate is chemo-mechanically polished to microsmoothness. Immediately before the epitaxial deposition, the polished front side is subjected to a very weak chemical etching to a removal depth of 500 A units without eliminating the polish or microsmoothness and, thereupon, the substrate is heated, in a high purity hydrogen atmosphere, to a temperature between about 680° C and 720° C and a GaAs layer is deposited on the front side. The temperature is then increased and there is deposited, on the GaAs layer, a ternary A III B V compound including a third, additive component whose proportion increases in the direction away from the GaAs layer and which consists of either an A III element or a B V element. The increase in concentration of the third component is continued to a predetermined final value determined by either the band gap or the corresponding wavelength of the emitted light, and then a third relatively thick layer of the ternary component is deposited, and the composition thereof is maintained constant at the predetermined final value of the second layer.

Inventors

• 👤 Hans Jager
• 👤 Emil Seipp

Bibliographic Details