US3723201A
Expired / Lapsed
US
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Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask
Assignee: Motorola Solutions Inc
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Filing: 1971-11-01
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Granted: 1973-03-27
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Expires: 1991-11-01
Abstract
Abstract THERE IS DISCLOSED A METHO OF MANUFACTURING LIGHT EMITTING SEMICONDUCTOR STRUCTURE OF GAAS AND GAASXP1-X ON GERMANIUM SUBSTRATES UTILIZING A DIFFUSION MASK OF POLYCRYSTALLINE SILICON.
Inventors
- 👤 J Keil
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:43
CPC Classifications
H; H10; H10P; H10P95/00; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/065; Y10S148/072; Y10S148/106; Y10S148/122; Y10S438/00; Y10S438/933; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-26 | 1976-09-25 | 1977-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-26 | 1980-09-25 | 1981-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-26 | 1984-09-25 | 1985-03-27 | $7700.00 | Window Closed / Lapsed |