US3801384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices
Assignee: Monsanto Co
•
Filing: 1972-12-08
•
Granted: 1974-04-02
•
Expires: 1992-12-08
Abstract
Abstract The disclosure herein pertains to methods for fabricating discrete semiconductor devices, particularly light-emitting diodes. The disclosure more particularly concerns a diffusion process to form controlled regions of P-type conductivity in Ntype conductivity semiconductors.
Inventors
- 👤 J Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:07
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10H; H10H20/00; H10H20/80; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/065
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
11 words
Process according to claim 1 wherein said impurity oxide is ZnO.
Claim 2
Dependent Claim
22 words
Process according to claim 2 wherein X in said formula equals one and semiconductor substrate is GaP and step (c) is omitted.
Claim 3
Dependent Claim
18 words
Process according to claim 2 wherein X in said formula equals zero and said semiconductor substrate is GaAs.
Claim 4
Dependent Claim
24 words
Process according to claim 2 wherein said semiconductor substrate is GaAs1 XPX, where X is a number greater than zero and less than one.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-04-01 | 1977-10-01 | 1978-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-04-01 | 1981-10-01 | 1982-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-04-01 | 1985-10-01 | 1986-04-02 | $7700.00 | Window Closed / Lapsed |