Patent RU2018266C1 successfully refreshed from Google Patents.
US4019082A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron emitting device and method of making the same
Assignee: RCA Corp
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Filing: 1975-03-24
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Granted: 1977-04-19
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Expires: 1995-03-24
Abstract
Abstract A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
Inventors
- 👤 Gregory Hammond Olsen
- 👤 Ramon Ubaldo Martinelli
- 👤 Michael Ettenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:07
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/12; H01J9/125; H01J1/00; H01J1/02; H01J1/32; H01J31/00; H01J31/08; H01J31/50; H01J31/508; H01J43/00; H01J43/02; H01J2201/00; H01J2201/32
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
65 words
An electron emitting device comprising a first body of single crystalline gallium arsenide having opposed, substantially flat surfaces, a second body of single crystalline indium gallium phosphide on one of the surfaces of said first body, said second body being thinner than said first body, and a layer of an electropositive work function reducing material on the other of said surfaces of said first body.
Claim 2
Dependent Claim
65 words
An electron emitting device comprising a first body of single crystalline gallium arsenide having opposed, substantially flat surfaces, a second body of single crystalline indium gallium phosphide on one of the surfaces of said first body, said second body being thinner than said first body, and a layer of an electropositive work function reducing material on the other of said surfaces of said first body.
Claim 3
Dependent Claim
39 words
An electron emitting device in accordance with claim 1 wherein the ratio of indium to gallium in the second body is such that the lattice parameter of said second body substantially matches the lattice parameter of the first body.
Claim 4
Dependent Claim
24 words
An electron emitting device in accordance with claim 2 in which the ratio of indium to gallium in the second body is substantially 50/50.
Claim 5
Dependent Claim
36 words
An electron emitting device in accordance with claim 3 including a third body of single crystalline semiconductor body on said second body, said third body having an opening therethrough exposing a portion of the second body.
Claim 6
Dependent Claim
24 words
An electron emitting device in accordance with claim 1 in which the second body is of a thickness of between 0.1 and 0.5 microns.
Claim 7
Dependent Claim
24 words
An electron emitting device in accordance with claim 5 in which the first body is of a thickness of between 1 and 4 microns.
Claim 8
Independent Claim
78 words
A method of making an electron emitting device comprising the steps of epitaxially depositing on a substantially flat substrate of single crystalline gallium arsenide a layer of single crystalline indium gallium phosphide, epitaxially depositing on said indium gallium phosphide layer a layer of single crystalline gallium arsenide which is thicker than the indium gallium phosphide layer, and then removing at least a portion of said substrate to expose at least a portion of said indium gallium phosphide layer.
Claim 9
Independent Claim
78 words
A method of making an electron emitting device comprising the steps of epitaxially depositing on a substantially flat substrate of single crystalline gallium arsenide a layer of single crystalline indium gallium phosphide, epitaxially depositing on said indium gallium phosphide layer a layer of single crystalline gallium arsenide which is thicker than the indium gallium phosphide layer, and then removing at least a portion of said substrate to expose at least a portion of said indium gallium phosphide layer.
Claim 10
Dependent Claim
25 words
The method in accordance with claim 7 in which the substrate is removed with an etchant which etches gallium arsenide but not indium gallium phosphide.
Claim 11
Dependent Claim
14 words
The method in accordance with claim 8 in which the etchant is Caro's etch.
Claim 12
Dependent Claim
26 words
The method in accordance with claim 8 in which the layers are epitaxially deposited by vapor deposition from a gas containing the elements of the layer.
Claim 13
Dependent Claim
22 words
The method in accordance with claim 7 including depositing a layer of a work function reducing material on the gallium arsenide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-18 | 1980-10-18 | 1981-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-18 | 1984-10-18 | 1985-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-18 | 1988-10-18 | 1989-04-19 | $7700.00 | Window Closed / Lapsed |