US4257057A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-multiplexed monolithic intrinsic infrared detector
Assignee: Boeing North American Inc
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Filing: 1979-05-07
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Granted: 1981-03-17
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Expires: 1999-05-07
Abstract
Abstract In this monolithic detector array, a signal processing layer is epitaxially formed directly on an active detector layer. The active detector layer is supported by a transparent substrate. The three layers are made of intrinsic semiconductors of the same conductivity type (e.g., n-type). The semiconductor forming the active layer has a smaller bandgap than the signal processing and substrate layers. A plurality of vias of opposite conductivity type (e.g, p-type) extend through the signal processing layer into the active detector layer where they form p-n junctions with the active detector layer. These p-n junctions collect charges generated by the radiation and the vias conduct these charges to the signal processing layer where gates, AC background suppression circuitry, and a charge coupled device process the photogenerated signals.
Inventors
- 👤 Derek T. Cheung
- 👤 II A. Mike Andrews
- 👤 Joseph T. Longo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:50
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
208 words
A self-multiplexed detector array comprising: a first conductivity type, intrinsic semiconductive substrate of Ga.sub.(1-x) In x Sb which is transparent to radiation, a first conductivity type, intrinsic semiconductive active layer of InAs.sub.(1-y) Sb y deposited on said substrate to form a heterojunction between said substrate and said active layer; a first conductivity type, intrinsic semiconductive signal processing layer of Ga.sub.(1-z) In z Sb epitaxially deposited on said active layer to form a heterojunction between said active layer and said signal processing layer, said signal processing layer having signal processing circuitry fabricated thereon, said signal processing layer and said substrate having a larger bandgap than said active layer; a plurality of vias of a second conductivity type extending through said signal processing layer into said active layer and forming a plurality of p-n homojunctions in said active layer between said first conductivity type active layer and said second conductivity type vias, said p-n homojunctions forming the detector array; an insulating layer of SiO 2 on said signal processing layer; and an input gate on said insulating layer adjacent each via for controlling the input charge from each via into said signal processing circuitry, whereby radiation entering said substrate is converted into electrical signals and processed on a single monolith.
Claim 2
Dependent Claim
208 words
A self-multiplexed detector array comprising: a first conductivity type, intrinsic semiconductive substrate of Ga.sub.(1-x) In x Sb which is transparent to radiation, a first conductivity type, intrinsic semiconductive active layer of InAs.sub.(1-y) Sb y deposited on said substrate to form a heterojunction between said substrate and said active layer; a first conductivity type, intrinsic semiconductive signal processing layer of Ga.sub.(1-z) In z Sb epitaxially deposited on said active layer to form a heterojunction between said active layer and said signal processing layer, said signal processing layer having signal processing circuitry fabricated thereon, said signal processing layer and said substrate having a larger bandgap than said active layer; a plurality of vias of a second conductivity type extending through said signal processing layer into said active layer and forming a plurality of p-n homojunctions in said active layer between said first conductivity type active layer and said second conductivity type vias, said p-n homojunctions forming the detector array; an insulating layer of SiO 2 on said signal processing layer; and an input gate on said insulating layer adjacent each via for controlling the input charge from each via into said signal processing circuitry, whereby radiation entering said substrate is converted into electrical signals and processed on a single monolith.
Claim 3
Dependent Claim
208 words
A self-multiplexed detector array comprising: a first conductivity type, intrinsic semiconductive substrate of Ga.sub.(1-x) Al x Sb which is transparent of radiation, a first conductivity type, intrinsic semiconductive active layer of Ga.sub.(1-y) Sb y deposited on said substrate to form a heterojunction between said substrate and said active layer; a first conductivity type, intrinsic semiconductive signal processing layer of Ga.sub.(1-z) Al z Sb epitaxially deposited on said active layer to form a heterojunction between said active layer and said signal processing layer, said signal processing layer having signal processing circuitry fabricated thereon, said signal processing layer and said substrate having a larger bandgap than said active layer; a plurality of vias of a second conductivity type extending through said signal processing layer into said active layer and forming a plurality of p-n homojunctions in said active layer between said first conductivity type active layer and said second conductivity type vias, said p-n homojunctions forming the detector array; an insulating layer of SiO 2 on said signal processing layer; and an input gate on said insulating layer adjacent each via for controlling the input charge from each via into said signal processing circuitry, whereby radiation entering said substrate is converted into electrical signals and processed on a single monolith.
Claim 4
Dependent Claim
208 words
A self-multiplexed detector array comprising: a first conductivity type, intrinsic semiconductive substrate of Ga.sub.(1-x) Al x Sb which is transparent of radiation, a first conductivity type, intrinsic semiconductive active layer of Ga.sub.(1-y) Sb y deposited on said substrate to form a heterojunction between said substrate and said active layer; a first conductivity type, intrinsic semiconductive signal processing layer of Ga.sub.(1-z) Al z Sb epitaxially deposited on said active layer to form a heterojunction between said active layer and said signal processing layer, said signal processing layer having signal processing circuitry fabricated thereon, said signal processing layer and said substrate having a larger bandgap than said active layer; a plurality of vias of a second conductivity type extending through said signal processing layer into said active layer and forming a plurality of p-n homojunctions in said active layer between said first conductivity type active layer and said second conductivity type vias, said p-n homojunctions forming the detector array; an insulating layer of SiO 2 on said signal processing layer; and an input gate on said insulating layer adjacent each via for controlling the input charge from each via into said signal processing circuitry, whereby radiation entering said substrate is converted into electrical signals and processed on a single monolith.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-16 | 1984-09-15 | 1985-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-16 | 1988-09-15 | 1989-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-16 | 1992-09-15 | 1993-03-17 | $7700.00 | Window Closed / Lapsed |