Patent US7112860B2 successfully refreshed from Google Patents.
US7112860B2
Expired / Lapsed
US
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Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
Assignee: MACOM Technology Solutions Holdings Inc
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Filing: 2003-03-03
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Granted: 2006-09-26
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Expires: 2023-03-03
Abstract
Abstract A monolithic electronic device includes a substrate, a semi-insulating, piezoelectric Group III-nitride epitaxial layer formed on the substrate, a pair of input and output interdigital transducers forming a surface acoustic wave device on the epitaxial layer and at least one electronic device (such as a HEMT, MESFET, JFET, MOSFET, photodiode, LED or the like) formed on the substrate. Isolation means are disclosed to electrically and acoustically isolate the electronic device from the SAW device and vice versa. In some embodiments, a trench is formed between the SAW device and the electronic device. Ion implantation is also disclosed to form a semi-insulating Group III-nitride epitaxial layer on which the SAW device may be fabricated. Absorbing and/or reflecting elements adjacent the interdigital transducers reduce unwanted reflections that may interfere with the operation of the SAW device.
Inventors
- 👤 Adam William Saxler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:16
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/05; H03H9/0538; H03H9/0542; H03H3/00; H03H3/007; H03H3/08; H03H9/02228; H03H9/02535; H03H9/02543; H03H9/02574; H03H9/0296; H03H9/02976; H10; H10N; H10N39/00
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
115 words
A monolithic electronic device, comprising: a substrate; a piezoelectric Group III-nitride epitaxial layer formed on the substrate; a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact; a trench between the surface acoustic wave device and the at least one electronic device; and wherein the metal contact is electrically connected to at least one of the input and/or the output transducers.
Claim 2
Dependent Claim
115 words
A monolithic electronic device, comprising: a substrate; a piezoelectric Group III-nitride epitaxial layer formed on the substrate; a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact; a trench between the surface acoustic wave device and the at least one electronic device; and wherein the metal contact is electrically connected to at least one of the input and/or the output transducers.
Claim 3
Dependent Claim
20 words
A monolithic electronic device as recited in claim 1 , wherein the at least one electronic device comprises a transistor.
Claim 4
Dependent Claim
20 words
A monolithic electronic device as recited in claim 1 , wherein the at least one electronic device comprises a photodiode.
Claim 5
Dependent Claim
22 words
A monolithic electronic device as recited in claim 1 , wherein the at least one electronic device comprises a light emitting diode.
Claim 6
Dependent Claim
22 words
A monolithic electronic device as recited in claim 1 , wherein the piezoelectric epitaxial layer comprises Al x Ga 1−x N (0≦x≦1).
Claim 7
Dependent Claim
19 words
A monolithic electronic device as recited in claim 5 , wherein the piezoelectric epitaxial layer comprises single crystal AlN.
Claim 8
Dependent Claim
23 words
A monolithic electronic device as recited in claim 6 , wherein the piezoelectric epitaxial layer comprising AlN is formed directly on the substrate.
Claim 9
Dependent Claim
26 words
A monolithic electronic device as recited in claim 7 , wherein the thickness of the piezoelectric epitaxial layer comprising AlN is less than one SAW wavelength.
Claim 10
Dependent Claim
29 words
A monolithic electronic device as recited in claim 7 , wherein the thickness of the piezoelectric epitaxial layer comprising AlN is greater than or equal to one SAW wavelength.
Claim 11
Dependent Claim
26 words
A monolithic electronic device as recited in claim 1 , wherein the piezoelectric epitaxial layer comprises In y Al x Ga 1−x−y N (0≦x≦1, 0≦y≦1, x+y≦1).
Claim 12
Dependent Claim
28 words
A monolithic electronic device as recited in claim 1 , wherein the at least one electronic device is formed on a mesa adjacent the surface acoustic wave device.
Claim 13
Dependent Claim
18 words
A monolithic electronic device as recited in claim 1 , wherein the plurality of metal fingers comprise aluminum.
Claim 14
Dependent Claim
22 words
A monolithic electronic device as recited in claim 1 , wherein the trench extends through the piezoelectric epitaxial layer into the substrate.
Claim 15
Dependent Claim
22 words
A monolithic electronic device as recited in claim 1 , wherein the at least one electronic device comprises a silicon carbide MESFET.
Claim 16
Dependent Claim
32 words
A monolithic electronic device as recited in claim 1 , wherein the plurality of metal fingers are oriented at an angle with respect to an edge of the monolithic electronic device die.
Claim 17
Dependent Claim
25 words
A monolithic electronic device as recited in claim 1 , further comprising a SAW absorber adjacent at least one of the input and/or output transducers.
Claim 18
Dependent Claim
25 words
A monolithic electronic device as recited in claim 1 , further comprising a SAW reflector adjacent at least one of the input and/or output transducers.
Claim 19
Dependent Claim
22 words
A monolithic electronic device as recited in claim 1 , wherein the metal fingers are formed above an implanted, electrically inactive region.
Claim 20
Dependent Claim
15 words
A monolithic electronic device as recited in claim 1 , wherein the substrate comprises SiC.
Claim 21
Dependent Claim
35 words
A monolithic electronic device as recited in claim 1 , wherein the substrate is selected from the group consisting of sapphire, aluminum nitride, aluminum gallium nitride, gallium nitride, silicon, GaAs, LGO, ZnO, LAO, and InP.
Claim 22
Dependent Claim
73 words
A monolithic electronic device, comprising: a substrate; a Group III-nitride epitaxial layer formed on the substrate; a plurality of interdigital transducers (IDTs) formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of IDTs and the semi-insulating region together forming a surface acoustic wave device; a trench between the surface acoustic wave device and the at least one electronic device; and at least one electronic device formed on the substrate.
Claim 23
Dependent Claim
73 words
A monolithic electronic device, comprising: a substrate; a Group III-nitride epitaxial layer formed on the substrate; a plurality of interdigital transducers (IDTs) formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of IDTs and the semi-insulating region together forming a surface acoustic wave device; a trench between the surface acoustic wave device and the at least one electronic device; and at least one electronic device formed on the substrate.
Claim 24
Dependent Claim
57 words
A monolithic electronic device, comprising: a substrate; a Group III-nitride epitaxial layer formed on the substrate; a surface acoustic wave device formed on a semi-insulating region of the Group III-nitride epitaxial layer; at least one electronic device formed on the substrate; and a trench between the surface acoustic wave device and the at least one electronic device.
Claim 25
Dependent Claim
57 words
A monolithic electronic device, comprising: a substrate; a Group III-nitride epitaxial layer formed on the substrate; a surface acoustic wave device formed on a semi-insulating region of the Group III-nitride epitaxial layer; at least one electronic device formed on the substrate; and a trench between the surface acoustic wave device and the at least one electronic device.
Claim 26
Dependent Claim
131 words
A monolithic electronic device, comprising: a substrate; a piezoelectric Group III-nitride epitaxial layer formed on the substrate, the piezoelectric Group III-nitride epitaxial layer having a semi-insulating region; a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact; and wherein the metal contact is electrically connected to at least one of the input and/or the output transducers and wherein the metal fingers and the metal contact are formed on a same surface of the Group III-nitride epitaxial layer.
Claim 27
Dependent Claim
131 words
A monolithic electronic device, comprising: a substrate; a piezoelectric Group III-nitride epitaxial layer formed on the substrate, the piezoelectric Group III-nitride epitaxial layer having a semi-insulating region; a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact; and wherein the metal contact is electrically connected to at least one of the input and/or the output transducers and wherein the metal fingers and the metal contact are formed on a same surface of the Group III-nitride epitaxial layer.
Claim 28
Dependent Claim
18 words
The monolithic electronic device of claim 23 , wherein the semi-insulating region comprises a region implanted with dopants.
References Cited (Backward Citations)
US3955160A
Cited
JPS58197910A
Cited
US5011549A
Cited
US4912064A
Cited
USRE34861E
Cited
US4912063A
Cited
EP0373606A1
Cited
US4946547A
Cited
US5210051A
Cited
US5292501A
Cited
US5200022A
Cited
US5155062A
Cited
US5270554A
Cited
US5265267A
Cited
JPH05183381A
Cited
US5393993A
Cited
US5523589A
Cited
US5592501A
Cited
US5576589A
Cited
US5739554A
Cited
US6217662B1
Cited
US6063186A
Cited
US6297522B1
Cited
US6316793B1
Cited
US6285866B1
Cited
US6518637B1
Cited
US6218680B1
Cited
US6396080B2
Cited
US6403982B2
Cited
US6265727B1
Cited
US6495852B1
Cited
US6300706B1
Cited
US20010035695A1
Cited
US6686616B1
Cited
US6555946B1
Cited
US6548333B2
Cited
US20020090454A1
Cited
US20020113668A1
Cited
US20020158707A1
Cited
US20020167023A1
Cited
US20020170491A1
Cited
US20030022412A1
Cited
US20030030119A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-09-25 | 2010-03-27 | 2010-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-09-25 | 2014-03-27 | 2014-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-09-25 | 2018-03-27 | 2018-09-26 | $7700.00 | Window Closed / Lapsed |