Abstract A single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit and a method of fabricating the same. A thin or thick piezoelectric crystal wafer is bonded on a silicon substrate and adjusted in thickness by mechanical grinding and polishing processes. Then, a surface acoustic wave resonator and other passive devices such as a filter, inductor, etc. are formed on the piezoelectric crystal wafer by a standard lithography process. Therefore, a high-precision oscillator and various passive devices can be included in a monolithic integrated circuit to implement a single-chip radio structure. This single-chip radio structure has the effect of reducing the volume and weight of the entire receiver while maintaining excellent performances provided by passive devices on a crystal substrate, such as frequency stability, frequency linearity and low power consumption, etc., as they are.
A method of fabricating a single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit, comprising the steps of: (a) bonding a metal layer selected from the group consisting of aluminum and gold on an area of a silicon substrate on which a piezoelectric crystal wafer is to be laid; (b) coating an epoxy bonding layer on said metal layer by a spin coating process; (c) bonding said piezoelectric crystal wafer on said epoxy bonding layer; (d) adjusting a thickness of said piezoelectric crystal wafer by mechanical grinding and polishing; (e) forming a surface acoustic wave resonator on the piezoelectric crystal wafer by using photolithography and etching a part of said piezoelectric crystal wafer with a solvent; and (f) connecting the resonator with an oscillator circuit on said silicon substrate by a metal wire layer.
Claim 2
Independent Claim
139 words
A method of fabricating a single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit, comprising the steps of: (a) bonding a metal layer selected from the group consisting of aluminum and gold on an area of a silicon substrate on which a piezoelectric crystal wafer is to be laid; (b) coating an epoxy bonding layer on said metal layer by a spin coating process; (c) bonding said piezoelectric crystal wafer on said epoxy bonding layer; (d) adjusting a thickness of said piezoelectric crystal wafer by mechanical grinding and polishing; (e) forming a surface acoustic wave resonator on the piezoelectric crystal wafer by using photolithography and etching a part of said piezoelectric crystal wafer with a solvent; and (f) connecting the resonator with an oscillator circuit on said silicon substrate by a metal wire layer.