Growth of beta-sic thin films and semiconductor devices fabricated thereon

Claim 1

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising: providing an Alpha-SiC crystal with a clean, planar, smooth surface along a basal plane thereof; removing subsurface damage and/or chemical impurities from the surface of the basal plane; and epitaxially depositing a thin film of Beta-SiC on the planar surface of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon containing material into a flowing stream of carrier gas, wherein the substrate is an Alpha-SiC substrate and the basal plane thereof on which epitaxial growth occurs is the (0001)Si face, and wherein the Beta-SiC thin film is epitaxially deposited in the growth direction on the (0001) Si face of the Alpha-SiC substrate such that the (111) crystallography of the Beta-SiC thin film matches the (0001) crystallography of the Alpha-SiC substrate and such that the Beta-Sic (101) face is parallel to the Alpha-SiC (1120) face and the Beta-Sic (111) face is parallel to the Alpha-SiC (0001) face while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and the carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha-Sic, and wherein the energy levels in the growth chamber and the source material to Carrier gas ratio are selected to produce a coherent, low defect Beta-SiC/AlphaSiC interface and a low, device-compatible defect density within the bulk Beta-SiC film.

Claim 2

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising: providing an Alpha-SiC crystal with a clean, planar, smooth surface along a basal plane thereof; removing subsurface damage and/or chemical impurities from the surface of the basal plane; and epitaxially depositing a thin film of Beta-SiC on the planar surface of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon containing material into a flowing stream of carrier gas, wherein the substrate is an Alpha-SiC substrate and the basal plane thereof on which epitaxial growth occurs is the (0001)Si face, and wherein the Beta-SiC thin film is epitaxially deposited in the growth direction on the (0001) Si face of the Alpha-SiC substrate such that the (111) crystallography of the Beta-SiC thin film matches the (0001) crystallography of the Alpha-SiC substrate and such that the Beta-Sic (101) face is parallel to the Alpha-SiC (1120) face and the Beta-Sic (111) face is parallel to the Alpha-SiC (0001) face while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and the carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha-Sic, and wherein the energy levels in the growth chamber and the source material to Carrier gas ratio are selected to produce a coherent, low defect Beta-SiC/AlphaSiC interface and a low, device-compatible defect density within the bulk Beta-SiC film.

Claim 3

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising: providing an Alpha-SiC crystal with a clean, planar, smooth surface along a basal plane thereof; removing subsurface damage and/or chemical impurities from the surface of the basal plane; and epitaxially depositing a thin film of Beta-SiC on the planar surface of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon-containing material into a flowing stream of carrier gas, wherein the substrate is an Alpha-SiC substrate and the basal plane thereof on which epitaxial growth occurs is the (0001)C face, and wherein the Beta-SiC thin film is epitaxially deposited in the growth direction on the (0001)C face of the Alpha-SiC substrate such that the (111) crystallography of the Beta-SiC thin film matches the (0001) crystallography of the Alpha-SiC substrate and such that the Beta-SiC (101) face is parallel to the Alpha-SiC (1120) face and the Beta-Sic (111) face is parallel to the Alpha-SiC (0001) face while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and the carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha SiC, and wherein the energy levels in the growth chamber and the source material to carrier gas ratio are selected to produce a coherent, low defect Beta-SiC/Alpha-SiC interface and a low, device-compatible defect density within the bulk Beta-Sic film.

Claim 4

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising: providing an Alpha-SiC crystal with a clean, planar, smooth surface along a basal plane thereof; removing subsurface damage and/or chemical impurities from the surface of the basal plane; and epitaxially depositing a thin film of Beta-SiC on the planar surface of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon-containing material into a flowing stream of carrier gas, wherein the substrate is an Alpha-SiC substrate and the basal plane thereof on which epitaxial growth occurs is the (0001)C face, and wherein the Beta-SiC thin film is epitaxially deposited in the growth direction on the (0001)C face of the Alpha-SiC substrate such that the (111) crystallography of the Beta-SiC thin film matches the (0001) crystallography of the Alpha-SiC substrate and such that the Beta-SiC (101) face is parallel to the Alpha-SiC (1120) face and the Beta-Sic (111) face is parallel to the Alpha-SiC (0001) face while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and the carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha SiC, and wherein the energy levels in the growth chamber and the source material to carrier gas ratio are selected to produce a coherent, low defect Beta-SiC/Alpha-SiC interface and a low, device-compatible defect density within the bulk Beta-Sic film.

Claim 5

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising polishing an Alpha-SiC crystal along a basal plane to provide a planar, smooth surface; oxidizing the polished surface of the Alpha-SiC substrate crystal; removing the oxidized layer from the substrate crystal; introducing the substrate crystal into a CVD system and etching the substrate with a flowing stream of hydrogen gas at a temperature sufficient to remove any native oxide layer thereon; and epitaxially depositing a film of Beta-SiC on the basal plane of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon-containing material into the flowing stream of hydrogen gas, while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha-Sic.

Claim 6

A method of producing an electrical grade, high purity, low defect, epitaxially grown film of monocrystalline Beta-SiC on Alpha-SiC substrate for use in semiconductor devices which will operate at high powers, high frequencies, high radiation densities, and temperatures over 500° C., the method comprising polishing an Alpha-SiC crystal along a basal plane to provide a planar, smooth surface; oxidizing the polished surface of the Alpha-SiC substrate crystal; removing the oxidized layer from the substrate crystal; introducing the substrate crystal into a CVD system and etching the substrate with a flowing stream of hydrogen gas at a temperature sufficient to remove any native oxide layer thereon; and epitaxially depositing a film of Beta-SiC on the basal plane of the substrate by introducing a vaporized, silicon-containing material and a vaporized carbon-containing material into the flowing stream of hydrogen gas, while introducing sufficient energy to insure sufficient decomposition of said silicon- and carbon-containing materials into silicon and carbon species and to insure sufficient surface diffusion of the silicon species and carbon species at the substrate surface to produce monocrystalline growth of Beta-SiC, but said introduced energy being less than the energy required to form Alpha-Sic.

Claim 11

A method of epitaxially growing a high purity, low defect, device quality film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in the fabrication of semiconductor devices which will operate at high powers, high frequencies, high radiation densities and at temperatures over 500° C., the method comprising: providing a 6H SiC substrate crystal having an exposed, planar (0001)C face or (0001)Si face that is prepared to be receptive to epitaxial growth thereon; introducing the 6H SiC substrate crystal into the growth chamber of a CVD system; evacuating the growth chamber of the CYD system to a vacuum of at least 10 -4 Torr; backfilling the CYD chamber with a flowing stream of H 2 gas in order to purge the system; continuing the flow of H 2 gas while heating the growth chamber to between about 1400° C. to about 1600° C.; etching the face of the substrate in the flow of H 2 gas for a time sufficient to remove at least a substantial portion of any native oxide layer thereon; introducing a silicon source gas and a carbon source gas into the H 2 stream, while maintaining the temperature in the growth chamber between about 1400° C. to about 1600° C., and maintaining the source gas (silicon source gas+carbon source gas) to carrier gas (H 2 ) ratio at a level sufficient to effect growth of a monocrystalline Beta-SiC film on the substrate.

Claim 12

A method of epitaxially growing a high purity, low defect, device quality film of monocrystalline Beta-SiC on an Alpha-SiC substrate for use in the fabrication of semiconductor devices which will operate at high powers, high frequencies, high radiation densities and at temperatures over 500° C., the method comprising: providing a 6H SiC substrate crystal having an exposed, planar (0001)C face or (0001)Si face that is prepared to be receptive to epitaxial growth thereon; introducing the 6H SiC substrate crystal into the growth chamber of a CVD system; evacuating the growth chamber of the CYD system to a vacuum of at least 10 -4 Torr; backfilling the CYD chamber with a flowing stream of H 2 gas in order to purge the system; continuing the flow of H 2 gas while heating the growth chamber to between about 1400° C. to about 1600° C.; etching the face of the substrate in the flow of H 2 gas for a time sufficient to remove at least a substantial portion of any native oxide layer thereon; introducing a silicon source gas and a carbon source gas into the H 2 stream, while maintaining the temperature in the growth chamber between about 1400° C. to about 1600° C., and maintaining the source gas (silicon source gas+carbon source gas) to carrier gas (H 2 ) ratio at a level sufficient to effect growth of a monocrystalline Beta-SiC film on the substrate.