Beta-silicon carbide/silicon semiconductor device - made by epitaxial growth

Abstract

Abstract beta-Silicon carbide is epitaxially grown on a silicon substrate to form a monocrystalline layer of high purity by reaction of a hydrocarbon with the Si substrate or a Si cpd. Silicon is epitaxially grown on the top surface of the beta-SiC remote from the substrate by known methods. The beta-SiC and the Si are both cubic and can be doped to controlled levels so as to form a purification. Various semiconductor devices can be made which are stable under irradiation.

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