US6300706B1 — Compound semiconductor monolithic frequency sourc…

Claim 1

Independent Claim 84 words

An article of manufacture to compensate for semiconductor microphonics, comprising: an integrated circuit; an acoustic device fabricated in the integrated circuit; the acoustic device being a piezoelectric semiconductor; a heat sink means provides cryogenic temperature stability to the acoustic device; and the integrated circuit includes a means for generating electronic feedback, having a plurality of sensors, that generates electronic feedback to the acoustic device to compensate for microphonics resulting in an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 2

Dependent Claim 84 words

An article of manufacture to compensate for semiconductor microphonics, comprising: an integrated circuit; an acoustic device fabricated in the integrated circuit; the acoustic device being a piezoelectric semiconductor; a heat sink means provides cryogenic temperature stability to the acoustic device; and the integrated circuit includes a means for generating electronic feedback, having a plurality of sensors, that generates electronic feedback to the acoustic device to compensate for microphonics resulting in an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 3

Dependent Claim 18 words

The article of claim 1 , further comprising the piezoelectric semiconductor is a III-V or a II-VI semiconductor.

Claim 4

Dependent Claim 18 words

The article of claim 2 wherein the III-V or II-VI semiconductor is a binary, ternary, or quaternary alloy.

Claim 5

Dependent Claim 22 words

The article of claim 1 , further comprising the piezoelectric semiconductor is of crystallographic point group 4-bar 3 m or 6 mm.

Claim 6

Dependent Claim 24 words

The article of claim 4 wherein: the piezoelectric semiconductor has an orientation selected from the group comprising: [100], [110], [111], or doubly rotated cuts.

Claim 7

Dependent Claim 34 words

The article of claim 1 , further comprising the piezoelectric semiconductor has doubly roatated orientations where the acoustic velocity of the mode of operation is substantially independent of deviations in angles Φ and θ.

Claim 8

Dependent Claim 20 words

The article of claim 6 , wherein the cuts of the doubly rotated orientations are largely insensitive to manufacturing deviations.

Claim 9

Dependent Claim 18 words

The article of claim 6 , wherein Φ is greater than zero degrees and less than 45 degrees.

Claim 10

Dependent Claim 18 words

The article of claim 6 , wherein θ is greater than 25 degrees and less than 35 degrees.

Claim 11

Dependent Claim 16 words

The article of claim 5 , further comprising, the heat sink means is a thermoelectric cooler.

Claim 12

Dependent Claim 15 words

The article of claim 5 , further comprising, the piezoelectric semiconductor is a GaAs semiconductor.

Claim 13

Dependent Claim 19 words

The article of claim 5 , further comprising, the band gap of the semiconductor is larger than 1.4 eV.

Claim 14

Dependent Claim 15 words

The article of claim 5 , further comprising the heat sink means is liquid nitrogen.

Claim 15

Dependent Claim 14 words

The article of claim 5 , further comprising a temperature-stable monolithic integrated circuit device.

Claim 16

Dependent Claim 90 words

A temperature-stable monolithic integrated circuit device, comprising: a monolithic, integrated circuit, semiconductor including a piezoelectronic semiconductor functioning as an acoustic device; a heat sink means; a means for electronic feedback to said piezoelectronic semiconductor generates a feedback signal to said piezoelectronic semiconductor; said heat sink means provides a cryogenic temperature stability to maintain a constant temperature to compensate for microphonics; a signal means for carrying a signal that excites the device; and said constant temperature provides an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 17

Dependent Claim 90 words

A temperature-stable monolithic integrated circuit device, comprising: a monolithic, integrated circuit, semiconductor including a piezoelectronic semiconductor functioning as an acoustic device; a heat sink means; a means for electronic feedback to said piezoelectronic semiconductor generates a feedback signal to said piezoelectronic semiconductor; said heat sink means provides a cryogenic temperature stability to maintain a constant temperature to compensate for microphonics; a signal means for carrying a signal that excites the device; and said constant temperature provides an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 18

Dependent Claim 31 words

The device of claim 15 , further comprising: the acoustic device is a bulk acoustic thin diaphragm wave resonator; and a plurality of coupled resonator filters being fabricated on a substrate.

Claim 19

Dependent Claim 39 words

The device of claim 15 , further comprising: the acoustic device is a surface acoustic wave resonator; said surface acoustic wave resonator being constructed of gallium arsenide; and said surface acoustic wave resonator having a plurality of interdigital transducers.

Claim 20

Dependent Claim 14 words

The device of claim 15 , wherein the acoustic device is a cantilever actuator.

Claim 21

Dependent Claim 14 words

The device circuit of claim 15 , wherein the acoustic device is operated non-resonantly.

Claim 22

Independent Claim 83 words

A device comprising: a semiconductor; a piezoelectric resonator located in the semiconductor; a heat sink means provides a constant temperature for said resonator; a means for generating electronic feedback, having a plurality of sensors, located on the semiconductor generates feedback to the resonator to compensate for microphonic disturbances; said semiconductor, and said heat sink means being combined to form a monolithic integrated circuit; and said constant temperature results in an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 23

Independent Claim 83 words

A device comprising: a semiconductor; a piezoelectric resonator located in the semiconductor; a heat sink means provides a constant temperature for said resonator; a means for generating electronic feedback, having a plurality of sensors, located on the semiconductor generates feedback to the resonator to compensate for microphonic disturbances; said semiconductor, and said heat sink means being combined to form a monolithic integrated circuit; and said constant temperature results in an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 24

Dependent Claim 107 words

A microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from a plurality of mechanical disturbances from an acoustic device, comprising: said piezoelectric resonator being located in a semiconductor having a heat sink means that provides a cryogenic temperature stability to said system; a plurality of sensors detect said energy from said plurality of mechanical disturbances, via their piezoelectric effect; said plurality of sensors providing an input to a means for generating electronic feedback; and said feedback means produces a plurality of drive signals that are merged with a plurality of device signals sent to the acoustic device in a compensatory manner.

Claim 25

Dependent Claim 107 words

A microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from a plurality of mechanical disturbances from an acoustic device, comprising: said piezoelectric resonator being located in a semiconductor having a heat sink means that provides a cryogenic temperature stability to said system; a plurality of sensors detect said energy from said plurality of mechanical disturbances, via their piezoelectric effect; said plurality of sensors providing an input to a means for generating electronic feedback; and said feedback means produces a plurality of drive signals that are merged with a plurality of device signals sent to the acoustic device in a compensatory manner.

Claim 26

Dependent Claim 26 words

The article of claim 1 , wherein the acuostic device has a band gap that is large enough for the device to operate at high temperatures.

Claim 27

Dependent Claim 14 words

The article of claim 22 , wherein the bandgap is larger than 1.5 eV.

Claim 28

Dependent Claim 14 words

The article of claim 22 , wherein the acoustic device comprises a piezoelectric semiconductor.

Claim 29

Dependent Claim 13 words

The article of claim 24 , wherein the piezoelectric semiconductor is silicon carbide.

Claim 30

Dependent Claim 22 words

The article of claim 22 , further comprising the feedback means generating feedback to the acoustic device to compensate for temperature effects.

Claim 31

Dependent Claim 22 words

The article of claim 22 , further comprising the feedback means generating feedback to the acoustic device to compensate for acceleration effects.

Claim 32

Dependent Claim 14 words

The article of claim 5 , further comprising a temperature-sensitive monolithic integrated circuit device.

Claim 33

Dependent Claim 17 words

The article of claim 10 , further comprising a monolithic integrated circuit device operating at high temperatures.

Claim 34

Dependent Claim 17 words

The article of claim 10 , further comprising a monolithic integrated circuit device operating at low temperatures.

Claim 35

Dependent Claim 59 words

The temperature-stable monolithic integrated circuit device, as recited in claim 16 , further comprising: said bulk acoustic wave resonator being fabricated on a 100 and a 110 surface normal; and said 100 and 110 surface normal utilizing transverse electric coupling to a shear wave resonant between an upper surface and a lower surface of said thin diaphragm wave resonator.

Claim 36

Dependent Claim 30 words

The temperature-stable monolithic integrated circuit device, as recited in claim 31 , further comprising: a plurality of GaAs layers as etch stops for diaphragm formation; and a plurality of electrodes.

Claim 37

Dependent Claim 26 words

The temperature-stable monolithic integrated circuit device, as recited in claim 32 , further comprising said heat sink means providing cryogenic temperature stability to the piezoelectric semiconductor.

Claim 38

Dependent Claim 22 words

The temperature-stable monolithic integrated circuit device, as recited in claim 33 , further comprising said heat sink means being a thermoelectric cooler.

Claim 39

Dependent Claim 31 words

The temperature-stable monolithic integrated circuit device, as recited in claim 34 , further comprising a shear wave excitation at a planar surface using lateral field excitation with said plurality of electrodes.

Claim 40

Dependent Claim 38 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 21 , said plurality of sensors further comprising at least one temperature-sensitive monolithic integrated circuit device.

Claim 41

Dependent Claim 115 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 36 , said temperature-sensitive monolithic integrated circuit device, further comprising: a monolithic, integrated circuit, semiconductor having a piezoelectronic semiconductor functioning as an acoustic device; a heat sink means; a means for electronic feedback to said piezoelectronic semiconductor generates a feedback signal to said piezoelectronic semiconductor; said heat sink means provides a cryogenic temperature stability to maintain a constant temperature to compensate for microphonics; a signal means for carrying a signal that excites the device; and said constant temperature provides an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 42

Dependent Claim 96 words

The temperature-sensitive monolithic integrated circuit device recited in claim 36 , further comprising: a monolithic, integrated circuit, semiconductor including a piezoelectronic semiconductor functioning as an acoustic device; a heat sink means; a means for electronic feedback to said piezoelectronic semiconductor generates a feedback signal to said piezoelectronic semiconductor; said heat sink means provides a cryogenic temperature stability to maintain a constant temperature to compensate for microphonics; a signal means for carrying a signal that excites the device; and said constant temperature provides an improved Q factor of at least 5,000 from 30.0 MHz to 300.0 MHz.

Claim 43

Dependent Claim 37 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 38 , further comprising: the acoustic device is a bulk acoustic thin diaphragm wave resonator; and a plurality of coupled resonator filters being fabricated on a substrate.

Claim 44

Dependent Claim 60 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 39 , said further comprising: said bulk acoustic wave resonator being fabricated on a 100 and a 110 surface normal; and said 100 and 110 surface normal utilizing transverse electric coupling to a shear wave resonant between an upper surface and a lower surface of said thin diaphragm wave resonator.

Claim 45

Dependent Claim 30 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 40 , further comprising: a plurality of GaAs layers as etch stops for diaphragm formation; and a plurality of electrodes.

Claim 46

Dependent Claim 22 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 41 , further comprising said heat sink means being a thermoelectric cooler.

Claim 47

Dependent Claim 21 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 41 , further comprising said heat sink means being liquid nitrogen.

Claim 48

Dependent Claim 31 words

The temperature-sensitive monolithic integrated circuit device, as recited in claim 43 , further comprising a shear wave excitation at a planar surface using lateral field excitation with said plurality of electrodes.

Claim 49

Dependent Claim 55 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 37 , said temperature-sensitive monolithic integrated circuit device further comprising: the acoustic device is a bulk acoustic thin diaphragm wave resonator; and a plurality of coupled resonator filters being fabricated on a substrate.

Claim 50

Dependent Claim 77 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 45 , said temperature-sensitive monolithic integrated circuit device further comprising: said bulk acoustic wave resonator being fabricated on a 100 and a 110 surface normal; and said 100 and 110 surface normal utilizing transverse electric coupling to a shear wave resonant between an upper surface and a lower surface of said thin diaphragm wave resonator.

Claim 51

Dependent Claim 48 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 46 , said temperature-sensitive monolithic integrated circuit device further comprising: a plurality of GaAs layers as etch stops for diaphragm formation; and a plurality of electrodes.

Claim 52

Dependent Claim 40 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 47 , said temperature-sensitive monolithic integrated circuit device, further comprising said heat sink means being a thermoelectric cooler.

Claim 53

Dependent Claim 39 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 47 , said temperature-sensitive monolithic integrated circuit device, further comprising said heat sink means being liquid nitrogen.

Claim 54

Dependent Claim 49 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 49 , said temperature-sensitive monolithic integrated circuit device further comprising a shear wave excitation at a planar surface using lateral field excitation with said plurality of electrodes.

Claim 55

Dependent Claim 35 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 21 , further comprising said plurality of sensors being a plurality of resonators.

Claim 56

Dependent Claim 37 words

The microphonic feedback system for providing feedback to a piezoelectric resonator to compensate for energy from mechanical disturbances, as recited in claim 51 , further comprising said plurality of resonators being a plurality of small, auxiliary resonators.

Claim 57

Dependent Claim 18 words

The article of claim 5 , further comprising said heat sink means being a group of cold fingers.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-10-08	2005-04-09	2005-10-09	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-10-08	2009-04-09	2009-10-09	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-10-08	2013-04-09	2013-10-09	$7700.00	Window Closed / Lapsed

Compound semiconductor monolithic frequency sources and actuators

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