US5422533A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Piezoelectric resonator
Assignee: Rutgers, The State University of New Jersey
•
Filing: 1994-03-09
•
Granted: 1995-06-06
•
Expires: 2014-03-09
Abstract
Abstract A piezoelectric resonator for use with microwave monolithic integrated ciit (MMIC) devices which are fabricated on (100) GaAs (gallium arsenide) material is provided. This resonator has a central resonator flat portion composed of (100) GaAs material and has a distributed reflector on each side of the flat portion with each reflector having an alternating series of layers, including a first layer having doped regions and an uppermost layer composed of the (100) GaAs material.
Inventors
- 👤 John A. Kosinski
- 👤 Yicheng Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:09
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/175
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
139 words
A buried resonator fabricated on a (100) GaAs substrate and comprising: a cavity resonator portion consisting of (100) GaAs (gallium arsenide) material; and upper and lower distributed reflectors disposed above and below the cavity resonator portion; each reflector including: an alternating series of layers including a first layer and an uppermost layer and consisting of either (100) Al.sub.χ Ga 1- χ As (aluminum gallium arsenide) material with a value of x between 0 and 1.0 or (100) GaAs material; said first layer of each reflector being disposed next to the cavity resonator portion and consisting of Al.sub.χ Ga 1- χ As material; said uppermost layer of each reflector consisting of (100) GaAs material suitable to act as a basis for MMIC fabrication; and at least one of said reflectors having at least one doped portion in its first layer.
Claim 2
Dependent Claim
139 words
A buried resonator fabricated on a (100) GaAs substrate and comprising: a cavity resonator portion consisting of (100) GaAs (gallium arsenide) material; and upper and lower distributed reflectors disposed above and below the cavity resonator portion; each reflector including: an alternating series of layers including a first layer and an uppermost layer and consisting of either (100) Al.sub.χ Ga 1- χ As (aluminum gallium arsenide) material with a value of x between 0 and 1.0 or (100) GaAs material; said first layer of each reflector being disposed next to the cavity resonator portion and consisting of Al.sub.χ Ga 1- χ As material; said uppermost layer of each reflector consisting of (100) GaAs material suitable to act as a basis for MMIC fabrication; and at least one of said reflectors having at least one doped portion in its first layer.
Claim 3
Dependent Claim
24 words
The resonator of claim 1, wherein the (100) Al.sub.χ Ga 1- χ As material is (100) Al 0 .25 Ga 0 .75 As material.
Claim 4
Dependent Claim
39 words
The resonator of claim 2, wherein the cavity resonator portion has a thickness (t) according to the formula: ##EQU4## where: n is an odd integer, and λ is the acoustic wavelength of the standing wave in the resonator portion.
Claim 5
Dependent Claim
33 words
The resonator of claim 3, wherein the alternating layers each have a thickness (t) according to the formula: ##EQU5## where: λ is the acoustic wavelength of the standing wave in the resonator portion.
Claim 6
Dependent Claim
41 words
The resonator of claim 4, wherein the thicknesses of the resonator portion and alternating layers deviate slightly from the exact expressions given, and said thicknesses are modified and are chosen to guarantee coincidence of the resonator frequency and reflector stop band.
Claim 7
Dependent Claim
14 words
The resonator of claim 1, wherein each of the distributed reflectors contains doped regions.
Claim 8
Dependent Claim
23 words
The resonator of claim 1, wherein the cavity resonator portion consists of either Al.sub.χ Ga 1- χ As material or (100) GaAs material.
References Cited (Backward Citations)
US3626257A
Cited
US3626328A
Cited
US3691476A
Cited
US4088515A
Cited
US3915765A
Cited
US3982207A
Cited
US4205329A
Cited
US4166967A
Cited
US4163238A
Cited
US4205331A
Cited
US4348686A
Cited
US4427913A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-05 | 1998-12-05 | 1999-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-05 | 2002-12-05 | 2003-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-05 | 2006-12-05 | 2007-06-06 | $7700.00 | Window Closed / Lapsed |