US4205331A
Expired / Lapsed
US
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Infrared optical devices of layered structure
Assignee: United States Department of the Army
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Filing: 1978-06-09
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Granted: 1980-05-27
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Expires: 1998-06-09
Abstract
Abstract An optical device is disclosed which includes first and second superlatticeemiconductor regions. The first superlattice semiconductor region includes a plurality of alternating barrier and light absorbing layers which absorbs light of a first light frequency. The second superlattice region also includes a plurality of alternating barrier and light absorbing layers. However, the light absorbing layers of the second superlattice semiconductor region absorbs light of a different frequency.
Inventors
- 👤 Leo Esaki
- 👤 George A. Sai-Halasz
- 👤 Leroy L. Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:43
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
142 words
An optical detection device comprising: first and second superlattice semiconductor regions joined by an insulator; each said region including two different materials arranged alternately in parallel layers to form a plurality of semiconductor heterojunctions; the bottom of the conduction band of one of said materials in each said region being lower than the bottom of the conduction band of the other of said materials in said region to form a series of potential wells and potential barriers across each said region; each said potential well having at least two quantized allowed energy states separated by an energy corresponding to a light frequency; said energy separation for all of said potential wells being equal in each said region and being different for different ones of said regions; and current sensing means attached to said layers for selectively sensing currents flowing in said regions.
Claim 2
Dependent Claim
142 words
An optical detection device comprising: first and second superlattice semiconductor regions joined by an insulator; each said region including two different materials arranged alternately in parallel layers to form a plurality of semiconductor heterojunctions; the bottom of the conduction band of one of said materials in each said region being lower than the bottom of the conduction band of the other of said materials in said region to form a series of potential wells and potential barriers across each said region; each said potential well having at least two quantized allowed energy states separated by an energy corresponding to a light frequency; said energy separation for all of said potential wells being equal in each said region and being different for different ones of said regions; and current sensing means attached to said layers for selectively sensing currents flowing in said regions.
Claim 3
Dependent Claim
22 words
An optical device according to claim 1, wherein each said potential well is of a thickness of between 50 to 150 angstroms.
Claim 4
Dependent Claim
38 words
An optical device according to claim 2, wherein said layers forming said potential barriers are composed of an alloy of gallium aluminum arsenide and said layers forming said potential wells are composed of an alloy of gallium arsenide.
Claim 5
Dependent Claim
27 words
An optical device according to claim 3, wherein the ratios of the alloy constituents of said gallium aluminum arsenide are different for different ones of said regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-27 | 1983-11-26 | 1984-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-27 | 1987-11-26 | 1988-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-27 | 1991-11-26 | 1992-05-27 | $7700.00 | Window Closed / Lapsed |