Patent US3360512A successfully refreshed from Google Patents.
US5200664A
Expired / Lapsed
US
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Surface acoustic wave device
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1991-07-09
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Granted: 1993-04-06
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Expires: 2011-07-09
Abstract
Abstract In a surface acoustic wave device for removing narrow band signals, detection sensitivity is significantly improved by disposing a group of metal strip arrays on the side opposite to output transducers with respect to input transducers on the surface of a piezo-electric film and connecting a group of diode arrays with this group of metal strip arrays.
Inventors
- 👤 Kazuyoshi Sugai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:28
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/0296; H03H9/02976
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
186 words
A surface acoustic wave device comprising: a multi-layered body which includes a first conductivity type high impurity concentration silicon substrate; a first conductivity type silicon epitaxial layer; an insulating film and a piezo-electric film; input transducers formed on said piezo-electric film for classifying an input signal in the frequency and generating surface acoustic waves in a plurality of propagation paths; output transducers formed on said piezo-electric film for obtaining output signals from the surface acoustic waves propagating in the propagation paths; a group of gate electrodes formed on said piezo-electric film, corresponding to the different propagation paths put between said output and said input transducers; a group of PN diode arrays formed on a top surface of said first conductivity type silicon epitaxial layer in the region between said input and said output transducers; a group of metal strip arrays disposed on a side of said output transducers opposite from said input transducers on the surface of the piezo-electric film; and a second group of diode arrays disposed on the surface of said silicon epitaxial layer and connected with the group of metal strip arrays, respectively.
Claim 2
Dependent Claim
186 words
A surface acoustic wave device comprising: a multi-layered body which includes a first conductivity type high impurity concentration silicon substrate; a first conductivity type silicon epitaxial layer; an insulating film and a piezo-electric film; input transducers formed on said piezo-electric film for classifying an input signal in the frequency and generating surface acoustic waves in a plurality of propagation paths; output transducers formed on said piezo-electric film for obtaining output signals from the surface acoustic waves propagating in the propagation paths; a group of gate electrodes formed on said piezo-electric film, corresponding to the different propagation paths put between said output and said input transducers; a group of PN diode arrays formed on a top surface of said first conductivity type silicon epitaxial layer in the region between said input and said output transducers; a group of metal strip arrays disposed on a side of said output transducers opposite from said input transducers on the surface of the piezo-electric film; and a second group of diode arrays disposed on the surface of said silicon epitaxial layer and connected with the group of metal strip arrays, respectively.
Claim 3
Dependent Claim
37 words
A surface acoustic wave device according to claim 1, wherein a high impurity concentration diffusion region is formed in a surface portion of said first conductivity type silicon epitaxial layer under said group of metal strip arrays.
Claim 4
Dependent Claim
21 words
A surface acoustic wave device according to claim 1, wherein said second group of diode arrays is composed of Schottky diodes.
Claim 5
Dependent Claim
97 words
A surface acoustic wave device according to claim 3, wherein each of said Schottky diodes includes: a second conductivity type well region formed on a surface of said first conductivity type silicon epitaxial layer; a second conductivity type high impurity concentration diffusion region formed on a surface of said second conductivity type well region; a Schottky electrode formed on said second conductivity type well region; and an ohmic electrode formed on said second conductivity type high impurity concentration diffusion region; wherein said Schottky electrode is connected with a respective strip of said group of metal strip arrays.
Claim 6
Dependent Claim
193 words
A surface acoustic wave device comprising: a substrate having a surface, an epitaxial layer provided on said surface of said substrate and having a surface on a side thereof remote from said substrate; an insulating layer provided on said surface of said epitaxial layer and having a surface on a side thereof remote from said epitaxial layer; a piezo-electric layer provided on said surface of said insulating layer and having a surface on a side thereof remote from said insulating layer; an input transducer and an output transducer provided on said surface of said piezo-electric layer at spaced locations; a gate electrode provided on said surface of said piezo-electric layer between said input transducer and said output transducer; an array of first diodes provided on said surface of said epitaxial layer substantially in alignment with said gate electrode; an array of conductive strips provided on said surface of said piezo-electric layer on a side of said input transducer remote from said output transducer; and a plurality of second diodes each having an anode connected to a respective one of said conductive strips, said second diodes having cathodes which are connected to each other.
Claim 7
Dependent Claim
193 words
A surface acoustic wave device comprising: a substrate having a surface, an epitaxial layer provided on said surface of said substrate and having a surface on a side thereof remote from said substrate; an insulating layer provided on said surface of said epitaxial layer and having a surface on a side thereof remote from said epitaxial layer; a piezo-electric layer provided on said surface of said insulating layer and having a surface on a side thereof remote from said insulating layer; an input transducer and an output transducer provided on said surface of said piezo-electric layer at spaced locations; a gate electrode provided on said surface of said piezo-electric layer between said input transducer and said output transducer; an array of first diodes provided on said surface of said epitaxial layer substantially in alignment with said gate electrode; an array of conductive strips provided on said surface of said piezo-electric layer on a side of said input transducer remote from said output transducer; and a plurality of second diodes each having an anode connected to a respective one of said conductive strips, said second diodes having cathodes which are connected to each other.
Claim 8
Dependent Claim
28 words
An apparatus according to claim 5, including a resistor having a first end connected to said cathodes of said diodes and having a second end connected to ground.
Claim 9
Dependent Claim
32 words
An apparatus according to claim 5, including a resistor having a first end connected to said cathodes of said diodes and having a second end connected to a DC bias power source.
Claim 10
Dependent Claim
26 words
An apparatus according to claim 5, including a plurality of strip-shaped electrodes which are arranged interdigitally between said conductive strips and are each connected to ground.
Claim 11
Dependent Claim
48 words
An apparatus according to claim 5, including a high impurity concentration diffusion region provided at said surface of said epitaxial layer below said output transducer, and a high impurity concentration diffusion region provided on said surface of said epitaxial layer below said input transducer and said conductive strips.
Claim 12
Dependent Claim
19 words
A surface acoustic wave device according to claim 5, wherein each of said second diodes is a Schottky diode.
Claim 13
Dependent Claim
89 words
An apparatus according to claim 10, wherein said epitaxial layer is a first conductivity type silicon, and wherein each Schottky diode includes a well region of a second conductivity type formed in said epitaxial layer adjacent said insulating layer, a high impurity concentration diffusion region of said second conductivity type formed in said well region adjacent said insulating layer, a Schottky electrode formed on said well region and connected to a respective one of said conductive strips, and an ohmic electrode formed on said high impurity concentration diffusion region.
Claim 14
Dependent Claim
27 words
A surface acoustic wave device according to claim 11, wherein said Schottky electrode and said ohmic electrode of each said Schottky diode extend through said insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |