US6900502B2
Expired / Lapsed
US
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Strained channel on insulator device
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 2003-04-03
•
Granted: 2005-05-31
•
Expires: 2023-04-03
Abstract
Abstract A semiconductor device 10 includes a substrate 12 (e.g., a silicon substrate) with an insulating layer 14 (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer 16 (e.g., SiGe) is disposed on the insulating layer 14 and a second semiconducting material layer 18 (e.g., Si) is disposed on the first semiconducting material layer 16 . The first and second semiconducting material layers 16 and 18 preferably have different lattice constants such that the first semiconducting material layer 16 is compressive and the second semiconducting material layer is tensile 18.
Inventors
- 👤 Chung-Hu Ge
- 👤 Chao-Hsuing Wang
- 👤 Chien-Chao Huang
- 👤 Wen-Chin Lee
- 👤 Chenming Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/791; H10D30/797; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D86/01; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
98 words
A semiconductor device comprising: a substrate; an insulating layer disposed on the substrate; a first semiconducting material layer disposed on the insulating layer, the first semiconducting material having a compressive stress; and a second semiconducting material layer disposed on the first semiconducting material layer, the second semiconducting material having a tensile stress; wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that, when the second semiconducting material layer is disposed on the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile.
Claim 2
Dependent Claim
98 words
A semiconductor device comprising: a substrate; an insulating layer disposed on the substrate; a first semiconducting material layer disposed on the insulating layer, the first semiconducting material having a compressive stress; and a second semiconducting material layer disposed on the first semiconducting material layer, the second semiconducting material having a tensile stress; wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that, when the second semiconducting material layer is disposed on the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile.
Claim 3
Dependent Claim
12 words
The device of claim 1 wherein the substrate comprises a semiconductor substrate.
Claim 4
Dependent Claim
13 words
The device of claim 1 wherein the insulating layer comprises an oxide layer.
Claim 5
Dependent Claim
14 words
The device of claim 1 wherein the insulating layer comprises a buried oxide layer.
Claim 6
Dependent Claim
21 words
The device of claim 1 wherein at least one of the first and second semiconducting material layers comprises an alloy semiconductor.
Claim 7
Dependent Claim
21 words
The device of claim 1 wherein at least one of the first and second semiconducting material layers comprises an elemental semiconductor.
Claim 8
Dependent Claim
21 words
The device of claim 1 wherein at least one of the first and second semiconducting material layers comprises a compound semiconductor.
Claim 9
Dependent Claim
32 words
The device of claim 1 and further comprising a plurality of isolation regions formed adjacent the first semiconducting material layer so as to induce compressive strain on the first semiconducting material layer.
Claim 10
Dependent Claim
32 words
The device of claim 1 and further comprising a plurality of isolation regions formed adjacent the second semiconducting material layer so as to induce tensile strain on the second semiconducting material layer.
Claim 11
Dependent Claim
21 words
The device of claim 1 and further comprising a strained source/drain region extending between the first and second semiconducting material layers.
Claim 12
Dependent Claim
29 words
The device of claim 10 wherein the strained source/drain region induces tensile strain on the second semiconducting material layer or more compressive strain on the first semiconducting material layer.
Claim 13
Dependent Claim
17 words
The device of claim 10 and further comprising a thin film layer disposed over the source/drain region.
Claim 14
Dependent Claim
24 words
The device of claim 12 wherein the thin film layer has a tensile stress which induces tensile strain on the second semiconducting material layer.
Claim 15
Dependent Claim
33 words
The device of claim 10 and further comprising a thin film layer with compressive stress over the source/drain region, the thin film layer inducing a compressive strain on the first semiconducting material layer.
Claim 16
Dependent Claim
23 words
The device of claim 1 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 17
Dependent Claim
48 words
The device of claim 1 wherein the first semiconducting material layer and the second semiconducting material layer each have a thickness and wherein the ratio of the thickness of the second semiconducting material layer to the thickness of the first semiconducting material layer is greater than about 0.3.
Claim 18
Dependent Claim
23 words
The device of claim 16 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 19
Dependent Claim
16 words
The device of claim 1 wherein the first semiconducting material layer comprises a silicon germanium layer.
Claim 20
Dependent Claim
15 words
The device of claim 1 wherein the second semiconducting material layer comprises a silicon layer.
Claim 21
Dependent Claim
89 words
A semiconductor device comprising: a substrate; a first semiconducting material layer with compressive stress over the substrate, the first semiconducting material layer being isolated from the substrate by an air tunnel; a second semiconducting material layer with tensile stress abutting the first semiconducting material layer; wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that when the second semiconducting material layer abuts the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile.
Claim 22
Dependent Claim
89 words
A semiconductor device comprising: a substrate; a first semiconducting material layer with compressive stress over the substrate, the first semiconducting material layer being isolated from the substrate by an air tunnel; a second semiconducting material layer with tensile stress abutting the first semiconducting material layer; wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that when the second semiconducting material layer abuts the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile.
Claim 23
Dependent Claim
12 words
The device of claim 20 wherein the substrate comprises a semiconductor substrate.
Claim 24
Dependent Claim
21 words
The device of claim 20 wherein at least one of the first and second semiconducting material layers comprises an alloy semiconductor.
Claim 25
Dependent Claim
21 words
The device of claim 20 wherein at least one of the first and second semiconducting material layers comprises an elemental semiconductor.
Claim 26
Dependent Claim
21 words
The device of claim 20 wherein at least one of the first and second semiconducting material layers comprises a compound semiconductor.
Claim 27
Dependent Claim
32 words
The device of claim 20 and further comprising a plurality of isolation regions formed adjacent the first semiconducting material layer so as to induce compressive strain on the first semiconducting material layer.
Claim 28
Dependent Claim
31 words
The device of claim 20 and further comprising plurality of isolation regions formed adjacent the second semiconducting material layer so as to induce tensile strain on the second semiconducting material layer.
Claim 29
Dependent Claim
19 words
The device of claim 20 and a strained source/drain region extending between the first and second semiconducting material layers.
Claim 30
Dependent Claim
29 words
The device of claim 27 wherein the strained source/drain region induces tensile strain on the second semiconducting material layer or more compressive strain on the first semiconducting material layer.
Claim 31
Dependent Claim
17 words
The device of claim 27 and further comprising a thin film layer disposed over the source/drain region.
Claim 32
Dependent Claim
24 words
The device of claim 29 wherein the thin film layer has a tensile stress which induces tensile strain on the second semiconducting material layer.
Claim 33
Dependent Claim
33 words
The device of claim 27 and further comprising a thin film layer with compressive stress over the source/drain region, the thin film layer inducing a compressive strain on the first semiconducting material layer.
Claim 34
Dependent Claim
23 words
The device of claim 20 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 35
Dependent Claim
48 words
The device of claim 20 wherein the first semiconducting material layer and the second semiconducting material layer each have a thickness and wherein the ratio of the thickness of the second semiconducting material layer to the thickness of the first semiconducting material layer is greater than about 0.3.
Claim 36
Dependent Claim
23 words
The device of claim 33 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 37
Dependent Claim
36 words
A semiconductor device comprising: a substrate; an insulating layer formed over the substrate; a compressive strained silicon germanium layer over the insulating layer; and a tensile strained silicon layer over the compressive strained silicon germanium layer.
Claim 38
Dependent Claim
36 words
A semiconductor device comprising: a substrate; an insulating layer formed over the substrate; a compressive strained silicon germanium layer over the insulating layer; and a tensile strained silicon layer over the compressive strained silicon germanium layer.
Claim 39
Dependent Claim
12 words
The device of claim 35 where the substrate comprises a silicon substrate.
Claim 40
Dependent Claim
72 words
The device of claim 35 and further comprising a field effect transistor, the field effect transistor comprising: a source region extending within the silicon germanium layer and the silicon layer; a drain region extending within the silicon germanium layer and the silicon layer, the drain region spaced from the source region by a channel region; a gate insulating layer overlying the channel region; and a conductive gate overlying the gate insulating layer.
Claim 41
Dependent Claim
51 words
The device of claim 37 and further comprising a second field effect transistor formed within the silicon germanium layer and the silicon layer and spaced from the first field effect transistor, wherein the first field effect transistor comprises an n-channel transistor and the second field effect transistor comprises a p-channel transistor.
Claim 42
Dependent Claim
14 words
The device of claim 35 wherein the insulating layer comprises a silicon dioxide layer.
Claim 43
Dependent Claim
23 words
The device of claim 35 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 44
Dependent Claim
42 words
The device of claim 35 wherein the silicon germanium layer and the silicon layer each have a thickness and wherein the ratio of the thickness of the silicon layer to the thickness of the silicon germanium layer is greater than about 0.3.
Claim 45
Dependent Claim
23 words
The device of claim 41 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 46
Dependent Claim
16 words
The device of claim 1 wherein the fist semiconducting material layer physically touches the insulating layer.
Claim 47
Dependent Claim
17 words
The device of claim 1 wherein the compressive strained silicon germanium layer physically touches the insulating layer.
Claim 48
Dependent Claim
125 words
A semiconductor device comprising: a substrate; an insulating layer disposed on the substrate; a first semiconducting material layer disposed on the insulating layer, the first semiconducting material having a compressive stress; a second semiconducting material layer disposed on the first semiconducting material layer, the second semiconducting material having a tensile stress, wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that, when the second semiconducting material layer is disposed on the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile; a source/drain region extending between the first and second semiconducting material layers; and a film overlying the source/drain region, the film inducing a strain on the source/drain region.
Claim 49
Dependent Claim
125 words
A semiconductor device comprising: a substrate; an insulating layer disposed on the substrate; a first semiconducting material layer disposed on the insulating layer, the first semiconducting material having a compressive stress; a second semiconducting material layer disposed on the first semiconducting material layer, the second semiconducting material having a tensile stress, wherein the first and second semiconducting materials have different lattice constants in a relaxed state such that, when the second semiconducting material layer is disposed on the first semiconducting material layer, the first semiconducting material layer is compressive and the second semiconducting material layer is tensile; a source/drain region extending between the first and second semiconducting material layers; and a film overlying the source/drain region, the film inducing a strain on the source/drain region.
Claim 50
Dependent Claim
26 words
The device of claim 45 wherein the first semiconducting material layer comprises a silicon germanium layer and the second semiconducting material layer comprises a silicon layer.
Claim 51
Dependent Claim
23 words
The device of claim 46 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 52
Dependent Claim
48 words
The device of claim 45 wherein the first semiconducting material layer and the second semiconducting material layer each have a thickness and wherein the ratio of the thickness of the first semiconducting material layer to the thickness of the second semiconducting material layer is greater than about 0.3.
Claim 53
Dependent Claim
23 words
The device of claim 48 wherein the first and second semiconducting material layers have a combined thickness of less than about 40 nm.
Claim 54
Dependent Claim
26 words
The device of claim 48 wherein the first semiconducting material layer comprises a silicon germanium layer and the second semiconducting material layer comprises a silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-05-30 | 2008-11-29 | 2009-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-05-30 | 2012-11-29 | 2013-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-05-30 | 2016-11-29 | 2017-05-31 | $7700.00 | Window Closed / Lapsed |