US6008095A
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US
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Process for formation of isolation trenches with high-K gate dielectrics
Assignee: Advanced Micro Devices Inc
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Filing: 1998-08-07
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Granted: 1999-12-28
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Expires: 2018-08-07
Abstract
Abstract A process for formation of isolation trenches with high-k gate dielectrics. In an example embodiment, the process comprises depositing a high permittivity layer on the substrate. An isolation trench extending from the high permittivity layer into the substrate is etched at a selected location on the substrate. The high permittivity layer is then etched to a selected thickness, and gate electrodes are formed adjacent the trench on the high permittivity layer of the selected thickness. In another embodiment, the isolation trench is formed with an oxide liner using an NO anneal, and the high-K gate dielectric layer is optionally reduced in thickness.
Inventors
- 👤 Mark I. Gardner
- 👤 H. Jim Fulford
- 👤 Charles E May
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:16
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0151; H10D84/02; H10D84/03; H10D84/038; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
80 words
A process for forming a semiconductor structure on a silicon substrate, comprising: depositing a high permittivity layer on the substrate; wherein the high permittivity layer material has a dielectric constant of at least 20; forming an isolation trench extending from the high permittivity layer into the substrate at a selected location on the substrate; etching away the high permittivity layer to a selected thickness; and forming gate electrodes adjacent the trench on the high permittivity layer of the selected thickness.
Claim 2
Dependent Claim
80 words
A process for forming a semiconductor structure on a silicon substrate, comprising: depositing a high permittivity layer on the substrate; wherein the high permittivity layer material has a dielectric constant of at least 20; forming an isolation trench extending from the high permittivity layer into the substrate at a selected location on the substrate; etching away the high permittivity layer to a selected thickness; and forming gate electrodes adjacent the trench on the high permittivity layer of the selected thickness.
Claim 3
Dependent Claim
60 words
The process of claim 1, further comprising: implanting a first concentration of a first dopant species into the substrate after formation of the gate electrodes; forming spacers on the high permittivity layer beside the gate electrodes; removing the high permittivity layer between spacers of adjacent gate electrodes; and implanting a second concentration of a second dopant species into the substrate.
Claim 4
Dependent Claim
14 words
The process of claim 2, wherein etching comprises plasma etching the high permittivity layer.
Claim 5
Dependent Claim
22 words
The process of claim 3, further comprising depositing a polysilicon layer over the high permittivity layer after etching the high permittivity layer.
Claim 6
Dependent Claim
32 words
The process of claim 1, wherein the high permittivity layer is comprised of material selected from the group of barium strontium titanate, tantalum oxide, lead zinc niobate, and lead scandium tantalum oxide.
Claim 7
Dependent Claim
13 words
The process of claim 1, wherein the gate electrodes comprise highly doped polysilicon.
Claim 8
Dependent Claim
12 words
The process of claim 1, wherein the gate electrodes comprise a metal.
Claim 9
Dependent Claim
12 words
The process of claim 1, wherein the gate electrodes comprise titanium nitride.
Claim 10
Dependent Claim
12 words
The process of claim 1, wherein the gate electrodes comprise titanium tungsten.
Claim 11
Dependent Claim
116 words
A process for forming a semiconductor structure on a silicon substrate, comprising: depositing a high permittivity layer on the substrate; wherein the high permittivity layer material has a dielectric constant of at least 20; forming a trench through the high permittivity layer and in the substrate at a selected location on the substrate; depositing oxide in the trench; forming gate electrodes adjacent the trench on the high permittivity layer; implanting a first concentration of a first dopant species into the substrate; forming spacers on the high permittivity layer beside the gate electrodes; removing the high permittivity layer between spacers of adjacent gate electrodes; and implanting a second concentration of a second dopant species into the substrate.
Claim 12
Dependent Claim
116 words
A process for forming a semiconductor structure on a silicon substrate, comprising: depositing a high permittivity layer on the substrate; wherein the high permittivity layer material has a dielectric constant of at least 20; forming a trench through the high permittivity layer and in the substrate at a selected location on the substrate; depositing oxide in the trench; forming gate electrodes adjacent the trench on the high permittivity layer; implanting a first concentration of a first dopant species into the substrate; forming spacers on the high permittivity layer beside the gate electrodes; removing the high permittivity layer between spacers of adjacent gate electrodes; and implanting a second concentration of a second dopant species into the substrate.
Claim 13
Dependent Claim
33 words
The process of claim 10, further comprising: planarizing the oxide in the trench with the high permittivity layer; and reducing the high permittivity layer to a selected thickness before forming the gate electrodes.
Claim 14
Dependent Claim
14 words
The process of claim 11, wherein reducing comprises plasma etching the high permittivity layer.
Claim 15
Dependent Claim
22 words
The process of claim 12, further comprising depositing a polysilicon layer over the high permittivity layer after etching the high permittivity layer.
Claim 16
Dependent Claim
25 words
The process of claim 11, further comprising oxidizing walls of the trench in the presence of NO gas prior to depositing oxide in the trench.
Claim 17
Dependent Claim
25 words
The process of claim 10, further comprising oxidizing walls of the trench in the presence of NO gas prior to depositing oxide in the trench.
Claim 18
Dependent Claim
16 words
The process of claim 10, wherein the high permittivity layer is comprised of barium strontium titanate.
Claim 19
Dependent Claim
15 words
The process of claim 10, wherein the high permittivity layer is comprised of tantalum oxide.
Claim 20
Dependent Claim
16 words
The process of claim 10, wherein the high permittivity layer is comprised of lead zinc niobate.
Claim 21
Dependent Claim
17 words
The process of claim 10, wherein the high permittivity layer is comprised of lead scandium tantalum oxide.
Claim 22
Dependent Claim
13 words
The process of claim 10, wherein the gate electrodes comprise highly doped polysilicon.
Claim 23
Dependent Claim
12 words
The process of claim 10, wherein the gate electrodes comprise a metal.
Claim 24
Dependent Claim
12 words
The process of claim 10, wherein the gate electrodes comprise titanium nitride.
Claim 25
Dependent Claim
12 words
The process of claim 10, wherein the gate electrodes comprise titanium tungsten.
Claim 26
Dependent Claim
20 words
The process of claim 10, wherein the first dopant species is selected from the group of boron, phosphorus, or arsenic.
Claim 27
Dependent Claim
24 words
The process of claim 24, wherein the first concentration of the first dopant species is in the range of approximately 8e14-3e15 ions/cm 2 .
Claim 28
Dependent Claim
26 words
The process of claim 25, wherein the first dopant species is implanted with an energy level in the range of approximately 0.5 KeV to 5 KeV.
Claim 29
Dependent Claim
20 words
The process of claim 24, wherein the second dopant species is selected from the group of boron, phosphorus, or arsenic.
Claim 30
Dependent Claim
26 words
The process of claim 27, wherein the second dopant species is implanted with an energy level in the range of approximately 0.2 KeV to 5 KeV.
Claim 31
Dependent Claim
23 words
The process of claim 28, wherein the second dopant species is implanted with a dose rate of approximately 2E15-6 E15 ions/cm 2 .
Claim 32
Dependent Claim
18 words
The process of claim 10, wherein the high permittivity layer has a dielectric constant of at least 20.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |