US5834348A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device having a ferroelectric capacitor
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-10-30
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Granted: 1998-11-10
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Expires: 2016-10-30
Abstract
Abstract In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric constant material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric constant material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.
Inventors
- 👤 Kee-won Kwon
- 👤 Chang-seok Kang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:37
CPC Classifications
H; H10; H10B; H10B53/00; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
117 words
A method for manufacturing a semiconductor device having a capacitor, said method comprising the steps of: forming a plurality of lower electrodes from a conductive material, said lower electrodes each having side surfaces, and said lower electrodes each having a double layer structure comprising a barrier metal and a platinum group metal; forming a spacer on the side surfaces of each of said lower electrodes, said spacer comprising a low dielectric constant material, such that the spacer is formed at least along a top edge of the side surfaces of the lower electrodes; forming a ferroelectric film directly on at least said lower electrodes and each said spacer; and forming an upper electrode on said ferroelectric film.
Claim 2
Independent Claim
117 words
A method for manufacturing a semiconductor device having a capacitor, said method comprising the steps of: forming a plurality of lower electrodes from a conductive material, said lower electrodes each having side surfaces, and said lower electrodes each having a double layer structure comprising a barrier metal and a platinum group metal; forming a spacer on the side surfaces of each of said lower electrodes, said spacer comprising a low dielectric constant material, such that the spacer is formed at least along a top edge of the side surfaces of the lower electrodes; forming a ferroelectric film directly on at least said lower electrodes and each said spacer; and forming an upper electrode on said ferroelectric film.
Claim 3
Independent Claim
93 words
A method for manufacturing a semiconductor device having a capacitor, said method comprising the steps of: forming a plurality of lower electrodes from a conductive material, said lower electrodes being spatially separated from one another; providing a material having a low dielectric constant between said lower electrodes, such that the material is provided at least along a top edge of side surfaces of the lower electrodes; forming a ferroelectric film directly on at least said lower electrodes and said material between said lower electrodes; and forming an upper electrode on said ferroelectric film.
Claim 4
Independent Claim
93 words
A method for manufacturing a semiconductor device having a capacitor, said method comprising the steps of: forming a plurality of lower electrodes from a conductive material, said lower electrodes being spatially separated from one another; providing a material having a low dielectric constant between said lower electrodes, such that the material is provided at least along a top edge of side surfaces of the lower electrodes; forming a ferroelectric film directly on at least said lower electrodes and said material between said lower electrodes; and forming an upper electrode on said ferroelectric film.
Claim 5
Dependent Claim
50 words
A method for manufacturing a semiconductor device according to claim 2, wherein said providing step comprises the steps of: depositing said material having a dielectric constant at least over and between said lower electrodes; planarizing said material having a dielectric constant; and etching anisotropically said material having a dielectric constant.
Claim 6
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 1, wherein said spacer comprises a material selected from the group consisting of PE SiO 2 , CVD oxide, Si x N y , BN, BPSG, PSG, USG, and BSG.
Claim 7
Dependent Claim
45 words
A method for manufacturing a semiconductor device according to claim 2, wherein said material having a low dielectric constant comprises a material selected from the group consisting of PE SiO 2 , CVD oxide, Si x N y , BN, BPSG, PSG, USG, and BSG.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-09 | 2002-05-11 | 2002-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-09 | 2006-05-11 | 2006-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-09 | 2010-05-11 | 2010-11-10 | $7700.00 | Window Closed / Lapsed |