Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming an impurity region on a main surface of a semiconductor substrate, forming an interlayer insulation film on the main surface of the semiconductor substrate to cover said impurity region, forming a contact hole in said interlayer insulation film reaching said impurity region, forming a buried conductive layer, filling said contact hole, in contact with said impurity region, and having a top face lower in level than a top face of said interlayer insulation film, forming a lower electrode layer on said interlayer insulation film to come into contact with said buried conductive layer, forming a first sidewall spacer at an edge face portion of said lower electrode layer, from a top face corner of said lower electrode layer to the top face of said interlayer insulation film, forming a second sidewall spacer on said lower electrode layer in a recess portion defined by a sidewall of said contact hole and said buried conductive layer, from a top face corner of said lower electrode layer formed on said interlayer insulation film to said lower electrode layer formed on said buried conductive layer, forming a high dielectric film of a high dielectric constant material to cover said lower electrode layer, and said first and second sidewall spacers, and forming an upper electrode layer to cover said high dielectric film.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming an impurity region on a main surface of a semiconductor substrate, forming an interlayer insulation film on the main surface of the semiconductor substrate to cover said impurity region, forming a contact hole in said interlayer insulation film reaching said impurity region, forming a buried conductive layer, filling said contact hole, in contact with said impurity region, and having a top face lower in level than a top face of said interlayer insulation film, forming a lower electrode layer on said interlayer insulation film to come into contact with said buried conductive layer, forming a first sidewall spacer at an edge face portion of said lower electrode layer, from a top face corner of said lower electrode layer to the top face of said interlayer insulation film, forming a second sidewall spacer on said lower electrode layer in a recess portion defined by a sidewall of said contact hole and said buried conductive layer, from a top face corner of said lower electrode layer formed on said interlayer insulation film to said lower electrode layer formed on said buried conductive layer, forming a high dielectric film of a high dielectric constant material to cover said lower electrode layer, and said first and second sidewall spacers, and forming an upper electrode layer to cover said high dielectric film.