US5679599A
Expired / Lapsed
US
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Isolation using self-aligned trench formation and conventional LOCOS
Assignee: Lattice Semiconductor Corp
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Filing: 1995-06-22
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Granted: 1997-10-21
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Expires: 2015-06-22
Abstract
Abstract A method for isolating regions of a circuit device in a semiconductor substrate. The method generally comprises the steps of: forming a first insulation region and a second insulation region; etching a trench in the first insulation region, the trench extending into the semiconductor substrate to a depth below the surface of the semiconductor substrate; filling the first isolation region with an isolation material and removing a portion of the isolation material such that the trench isolation material fills the trench and has a surface level with the surface of the substrate; and thermally growing a field oxide in the first and second isolation regions. In a further aspect, a semiconductor device is provided. The device is formed on a semiconductor substrate, the substrate having a surface and includes at least a first, second, and third active regions separated by first and second insulating regions. The first insulation region separates the first and second active regions, and includes a first portion extending a first depth into the semiconductor substrate and having a width, and a second portion extending a second depth into the semiconductor substrate and having a second width. In the first insulating region, the first depth is greater than the second depth and the first width is smaller than the second width. The second insulating region separates the second and third active regions, and has a third width and extending a third depth below the surface of the semiconductor substrate, the third depth being substantially the same as said second depth.
Inventors
- 👤 Sunil Mehta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:59
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/014; H10W10/0145; H10W10/0147; H10W10/10; H10W10/13; H10W10/17
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
182 words
A method for isolating regions of a circuit device in a semiconductor substrate, the substrate having a surface, comprising the steps of: forming a first insulating layer on the surface of the substrate; forming a layer of a nitride material on the first insulating layer, the nitride material having a surface; forming a second insulating layer on the nitride material; and patterning the second insulating layer, nitride material and the first insulating layer to provide a first insulation region and a second insulation region by exposing a first and second portions of the surface of the substrate; etching a trench in the first insulation region while the second insulation region being covered by a mask the trench extending into the semiconductor substrate to a depth below the surface of the semiconductor substrate; filling the first isolation region with an isolation oxide and removing a portion of the isolation oxide such that the trench isolation material fills the trench and has a surface level with the surface of the substrate; and thermally growing a field oxide in the first and second isolation regions.
Claim 2
Independent Claim
182 words
A method for isolating regions of a circuit device in a semiconductor substrate, the substrate having a surface, comprising the steps of: forming a first insulating layer on the surface of the substrate; forming a layer of a nitride material on the first insulating layer, the nitride material having a surface; forming a second insulating layer on the nitride material; and patterning the second insulating layer, nitride material and the first insulating layer to provide a first insulation region and a second insulation region by exposing a first and second portions of the surface of the substrate; etching a trench in the first insulation region while the second insulation region being covered by a mask the trench extending into the semiconductor substrate to a depth below the surface of the semiconductor substrate; filling the first isolation region with an isolation oxide and removing a portion of the isolation oxide such that the trench isolation material fills the trench and has a surface level with the surface of the substrate; and thermally growing a field oxide in the first and second isolation regions.
Claim 3
Dependent Claim
74 words
The method of claim 1 wherein the step of forming further comprises: providing a field implantation mask on the second insulating layer; implanting a dopant of the same impurity type into the surface portions of the substrate; depositing a spacer material on the second insulating layer and said surface portions of the substrate; and etching a portion of the spacer material to form spacers overlying a portion of the surface potions of the substrate.
Claim 4
Dependent Claim
35 words
The method of claim 1 further including the step, following the step of forming a first insulating layer on the surface of the substrate, of: forming a layer of polysilicon on the first insulating layer.
Claim 5
Dependent Claim
46 words
The method of claim 1 wherein the step of etching comprises patterning the exposed area with a trench mask to provide a trench etch region on said first insulation region; etching said first insulation region to form a trench extending below the surface of the substrate.
Claim 6
Dependent Claim
22 words
The method of claim 4 wherein the step of etching further comprises implanting an impurity of said impurity type into the substrate.
Claim 7
Dependent Claim
31 words
The method of claim 4 wherein the step of etching further comprises forming a third insulating layer in the trench and on a second of the exposed portions of the substrate.
Claim 8
Dependent Claim
35 words
The method of claim 4 wherein the step of etching further comprises forming a third insulating layer in the trench and on said second isolation region; and etching at least a portion of the spacers.
Claim 9
Dependent Claim
13 words
The method of claim 7 wherein said portion comprises all of said spacers.
Claim 10
Dependent Claim
76 words
The method of claim 1 wherein the step of filling comprises: depositing a fourth layer of insulating material over the second insulating layer, the spacers, and the third insulating layer; removing a first portion of the fourth insulating layer and the second insulating layer to expose the surface of the nitride material thereby forming a planar surface; and etching a second portion of the fourth insulating layer to expose the second exposed portion of the substrate.
Claim 11
Independent Claim
304 words
A method of making a semiconductor device, comprising the steps of: (a) providing a substrate of a first impurity type, the substrate having a surface; (b) forming a first insulating layer on the surface of the substrate; (c) forming a layer of a nitride material on the first insulating layer, the nitride material having a surface; (d) forming a second insulating layer on the nitride material; (e) patterning the first insulating layer, nitride material and the second insulating layer to provide exposed portions of the substrate; (f) providing a field implantation mask on the second insulating layer; (g) implanting a dopant of the first impurity type into the exposed portions of the substrate; (h) depositing a spacer material on the second insulating layer and said exposed portions of the substrate; (i) etching a portion of the spacer material to form spacers overlying a portion of the exposed potions of the substrate; (j) patterning the exposed area with a trench mask to provide a trench etch region on one of the exposed portions of the surface of the substrate; (k) etching said one of said exposed portions of the substrate to form a trench extending below the surface of the substrate; (l) implanting an impurity of the first type into the substrate; (m) forming a third insulating layer in the trench and on a second of the exposed portions of the substrate; (n) depositing a fourth layer of insulating material over the second insulating layer, the spacers, and the third insulating layer. (o) removing a first portion of the fourth insulating layer and the second insulating layer to expose the surface of the nitride material; (p) etching a second portion of the fourth insulating layer to expose the second exposed portion of the substrate; and (q) growing a field oxide in said second exposed region.
Claim 12
Independent Claim
304 words
A method of making a semiconductor device, comprising the steps of: (a) providing a substrate of a first impurity type, the substrate having a surface; (b) forming a first insulating layer on the surface of the substrate; (c) forming a layer of a nitride material on the first insulating layer, the nitride material having a surface; (d) forming a second insulating layer on the nitride material; (e) patterning the first insulating layer, nitride material and the second insulating layer to provide exposed portions of the substrate; (f) providing a field implantation mask on the second insulating layer; (g) implanting a dopant of the first impurity type into the exposed portions of the substrate; (h) depositing a spacer material on the second insulating layer and said exposed portions of the substrate; (i) etching a portion of the spacer material to form spacers overlying a portion of the exposed potions of the substrate; (j) patterning the exposed area with a trench mask to provide a trench etch region on one of the exposed portions of the surface of the substrate; (k) etching said one of said exposed portions of the substrate to form a trench extending below the surface of the substrate; (l) implanting an impurity of the first type into the substrate; (m) forming a third insulating layer in the trench and on a second of the exposed portions of the substrate; (n) depositing a fourth layer of insulating material over the second insulating layer, the spacers, and the third insulating layer. (o) removing a first portion of the fourth insulating layer and the second insulating layer to expose the surface of the nitride material; (p) etching a second portion of the fourth insulating layer to expose the second exposed portion of the substrate; and (q) growing a field oxide in said second exposed region.
Claim 13
Dependent Claim
23 words
The method of claim 10 wherein said step (b) comprises thermally growing a layer of silicon dioxide on the surface of a substrate.
Claim 14
Dependent Claim
18 words
The method of claim 10 wherein said step (c) comprises depositing a nitride layer by chemical vapor deposition.
Claim 15
Dependent Claim
16 words
The method of claim 10 wherein said step (c) comprises depositing a layer of silicon nitride.
Claim 16
Dependent Claim
25 words
The method of claim 10 further including the step, between said steps (b) and (c), of forming a polysilicon layer on said first insulating layer.
Claim 17
Dependent Claim
19 words
The method of claim 10 wherein said step (d) comprises depositing said second insulating layer by chemical vapor deposition.
Claim 18
Dependent Claim
15 words
The method of claim 10 wherein said step (e) includes using an active photoresist material.
Claim 19
Dependent Claim
53 words
The method of claim 10 wherein said step (e) comprises depositing an active photoresist material on the surface of the second insulating layer, exposing the active photoresist material to radiation in selected regions, and etching said exposed regions to remove selected portions of the second insulating layer, nitride material, and first insulating layer.
Claim 20
Dependent Claim
43 words
The method of claim 10 wherein said step (f) comprises foxing a photoresist layer over the surface of the second insulating layer, patterning the photoresist by selectively exposing portions of the resist to radiation, and etching the resist to remove said selected portions.
Claim 21
Dependent Claim
16 words
The method of claim 10 wherein said step (h) includes depositing spacer material comprising a nitride.
Claim 22
Dependent Claim
15 words
The method of claim 10 wherein step (h) includes depositing spacer material comprising an oxide.
Claim 23
Dependent Claim
15 words
The method of claim 10 wherein step (h) includes depositing spacer material comprising an oxynitride.
Claim 24
Dependent Claim
14 words
The method of claim 10 wherein step (h) includes depositing spacer material comprising polysilicon.
Claim 25
Dependent Claim
14 words
The method of claim 10 wherein said step (k) comprises performing an anisotropic etch.
Claim 26
Dependent Claim
23 words
The method of claim 10 wherein said step (l) comprises implanting impurity ions in a direction normal to the surface of the substrate.
Claim 27
Dependent Claim
25 words
The method of claim 10 wherein said step (l) comprises implanting impurity ions in a direction non-normal with respect to the surface of the substrate.
Claim 28
Dependent Claim
23 words
The method of claim 10 including the step, between said steps (m) and (n) of etching at least a portion of the spacers.
Claim 29
Dependent Claim
16 words
The method of claim 25 wherein said step of etching comprises etching all of said spacers.
Claim 30
Independent Claim
230 words
A method of isolating adjacent active regions in a semiconductor substrate, the substrate having a surface and being of a first conductivity type, comprising the steps of: (a) forming a first insulating layer on the surface of the substrate; (b) forming a layer of a nitride material on the first insulating layer (c) forming a second insulating layer on the nitride material (d) exposing at least a first and second portions of the substrate; (e) implanting a first impurity type into the first and second portions of the substrate (f) forming spacers overlying a portion of the first and second exposed potions of the substrate; (g) etching said first exposed portion of the substrate to form a trench extending below the surface of the substrate; (h) implanting an impurity of said same type into the substrate and the trench; (i) forming a third insulating layer in the trench and on said second exposed portion of the substrate; (j) depositing a fourth layer of insulating material over the second insulating layer, the spacers, and the third insulating layer; (k) removing a first portion of the fourth insulating layer and the second insulating layer to expose the surface of the nitride material; (l) etching a second portion of the fourth insulating layer to expose the second exposed portion of the substrate; and (m) growing a field oxide in said second exposed region.
Claim 31
Independent Claim
230 words
A method of isolating adjacent active regions in a semiconductor substrate, the substrate having a surface and being of a first conductivity type, comprising the steps of: (a) forming a first insulating layer on the surface of the substrate; (b) forming a layer of a nitride material on the first insulating layer (c) forming a second insulating layer on the nitride material (d) exposing at least a first and second portions of the substrate; (e) implanting a first impurity type into the first and second portions of the substrate (f) forming spacers overlying a portion of the first and second exposed potions of the substrate; (g) etching said first exposed portion of the substrate to form a trench extending below the surface of the substrate; (h) implanting an impurity of said same type into the substrate and the trench; (i) forming a third insulating layer in the trench and on said second exposed portion of the substrate; (j) depositing a fourth layer of insulating material over the second insulating layer, the spacers, and the third insulating layer; (k) removing a first portion of the fourth insulating layer and the second insulating layer to expose the surface of the nitride material; (l) etching a second portion of the fourth insulating layer to expose the second exposed portion of the substrate; and (m) growing a field oxide in said second exposed region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-20 | 2001-04-21 | 2001-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-20 | 2005-04-21 | 2005-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-20 | 2009-04-21 | 2009-10-21 | $7700.00 | Window Closed / Lapsed |