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US6046487A Expired / Lapsed US ⏱️ 0.0 years remaining

Shallow trench isolation with oxide-nitride/oxynitride liner

Assignee: Qimonda AG
•
Filing: 1997-12-12
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Granted: 2000-04-04
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Expires: 2017-12-12
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Abstract

Abstract Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O 2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

Inventors

  • 👤 John Preston Benedict
  • 👤 David Mark Dobuzinsky
  • 👤 Philip Lee Flaitz
  • 👤 Erwin N. Hammerl
  • 👤 Herbert Ho
  • 👤 James F. Moseman
  • 👤 Herbert Palm
  • 👤 Seiko Yoshida
  • 👤 Hiroshi Takato

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 16:47
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 84 words
An isolation member embedded in a silicon layer of an integrated circuit comprising: a silicon layer on a substrate having at least one isolation trench; a conformal layer in said at least one isolation trench, said conformal layer consisting of a first layer of silicon nitride followed by a second layer of silicon oxide and has a thickness of 5 to 10 nm.; and an oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench.
Claim 2
Dependent Claim 84 words
An isolation member embedded in a silicon layer of an integrated circuit comprising: a silicon layer on a substrate having at least one isolation trench; a conformal layer in said at least one isolation trench, said conformal layer consisting of a first layer of silicon nitride followed by a second layer of silicon oxide and has a thickness of 5 to 10 nm.; and an oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench.
Claim 3
Dependent Claim 19 words
The isolation member of claim 1 further comprising a thermal oxide layer between said conformal layer and said trench.
Claim 4
Dependent Claim 84 words
An isolation member embedded in a silicon layer of an integrated circuit comprising: a silicon layer on a substrate having at least one isolation trench; a conformal layer in said at least one isolation trench, said conformal layer consisting of a first layer of silicon nitride followed by a second layer of silicon oxynitride and has a thickness of 5 to 10 nm.; and an oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench.
Claim 5
Dependent Claim 84 words
An isolation member embedded in a silicon layer of an integrated circuit comprising: a silicon layer on a substrate having at least one isolation trench; a conformal layer in said at least one isolation trench, said conformal layer consisting of a first layer of silicon nitride followed by a second layer of silicon oxynitride and has a thickness of 5 to 10 nm.; and an oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench.
Claim 6
Dependent Claim 19 words
The isolation member of claim 3 further comprising a thermal oxide layer between said conformal layer and said trench.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-04-04 2003-10-04 2004-04-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-04-04 2007-10-04 2008-04-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-04-04 2011-10-04 2012-04-04 $7700.00 Window Closed / Lapsed

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