US5099304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with insulating isolation groove
Assignee: NEC Corp
•
Filing: 1989-12-08
•
Granted: 1992-03-24
•
Expires: 2009-12-08
Abstract
Abstract A semiconductor device comprising an insulating isolation groove which comprises a groove in a substrate, an insulating film on the inner surface of the groove, a polycrystal silicon film and a boron phosphosilicate glass film in order embedded within the groove, and a silicon oxide film on the boron phosphosilicate glass film. Since the polycrystal silicon film and boron phosphosilicate glass film are embedded within the groove, the crystal defect due to thermal expansion does not occur. And, since it is not necessary to oxidize the surface of the polycrystal silicon film within the groove, deformation due to an increased build-up at the time of oxidation does not occur.
Inventors
- 👤 Hisashi Takemura
- 👤 Mitsuhiro Sugiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:22
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
143 words
A semiconductor device which comprises: a groove having a depth of 4 μm and formed in a silicon semiconductor substrate in a direction extending from one main surface of the silicon semiconductor substrate toward the interior thereof; an insulating film formed of a silicon nitride film and a silicon oxide film built under said silicon nitride film on the sidewall and bottom of said groove; a polycrystal silicon film filling the groove on said silicon nitride film, a top surface of said polycrystal film being recessed downwardly by a predetermined depth from the top surface of the silicon substrate; a boron phosphosilicate glass film filling said recessed depth on the polycrystal film, a top surface of said glass film being coplanar with the top surface of said groove; and a silicon oxide film covering the top surface of the boron phosphosilicate glass film.
Claim 2
Dependent Claim
143 words
A semiconductor device which comprises: a groove having a depth of 4 μm and formed in a silicon semiconductor substrate in a direction extending from one main surface of the silicon semiconductor substrate toward the interior thereof; an insulating film formed of a silicon nitride film and a silicon oxide film built under said silicon nitride film on the sidewall and bottom of said groove; a polycrystal silicon film filling the groove on said silicon nitride film, a top surface of said polycrystal film being recessed downwardly by a predetermined depth from the top surface of the silicon substrate; a boron phosphosilicate glass film filling said recessed depth on the polycrystal film, a top surface of said glass film being coplanar with the top surface of said groove; and a silicon oxide film covering the top surface of the boron phosphosilicate glass film.
Claim 3
Dependent Claim
26 words
A semiconductor device as claimed in claim 1, wherein the boron phosphosilicate glass film is filled upon said polycrystal silicon film within 2 μm in depth.
References Cited (Backward Citations)
US4404735A
Cited
US4471525A
Cited
US4819054A
Cited
US4740480A
Cited
US4621414A
Cited
US4888300A
Cited
US4810669A
Cited
JPS6455853A
Cited
US4855804A
Cited
US4835115A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |