US5763315A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Shallow trench isolation with oxide-nitride/oxynitride liner
Assignee: Qimonda AG
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Filing: 1997-01-28
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Granted: 1998-06-09
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Expires: 2017-01-28
Abstract
Abstract Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O 2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.
Inventors
- 👤 John Preston Benedict
- 👤 David Mark Dobuzinsky
- 👤 Philip Lee Flaitz
- 👤 Erwin N. Hammerl
- 👤 Herbert Ho
- 👤 James F. Moseman
- 👤 Herbert Palm
- 👤 Seiko Yoshida
- 👤 Hiroshi Takato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:32
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
159 words
A method of forming isolation members embedded in a silicon layer of an integrated circuit, the method comprising the steps of: depositing a protective layer containing at least one layer of nitride on an exposed surface of a silicon layer; etching through said protective layer to form at least one isolation mask aperture; etching through said at least one isolation mask aperture to form at least one isolation trench; forming a conformal layer in said at least one isolation trench and on said protective nitride layer, said conformal layer selected from the group consisting of an oxynitride, a dual layer of an oxide plus a nitride and a dual layer of an oxynitride plus a nitride; depositing a CVD layer of oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench; stripping said protective nitride layer and that portion of said conformal layer that is on said protective nitride layer.
Claim 2
Independent Claim
159 words
A method of forming isolation members embedded in a silicon layer of an integrated circuit, the method comprising the steps of: depositing a protective layer containing at least one layer of nitride on an exposed surface of a silicon layer; etching through said protective layer to form at least one isolation mask aperture; etching through said at least one isolation mask aperture to form at least one isolation trench; forming a conformal layer in said at least one isolation trench and on said protective nitride layer, said conformal layer selected from the group consisting of an oxynitride, a dual layer of an oxide plus a nitride and a dual layer of an oxynitride plus a nitride; depositing a CVD layer of oxide filler over said conformal layer and having a thickness sufficient to fill said at least one isolation trench; stripping said protective nitride layer and that portion of said conformal layer that is on said protective nitride layer.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the step of forming said conformal layer comprises depositing a conformal layer of oxynitride.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein said conformal layer has a thickness of 5 to 15 nm.
Claim 5
Dependent Claim
57 words
The method of claim 1 wherein the step of forming said conformal layer comprises the steps of: depositing a conformal layer of nitride in said at least one isolation trench and on said protective nitride layer; and oxidizing at least a portion of said nitride layer to an oxynitride so as to form a dual oxynitride/nitride layer.
Claim 6
Dependent Claim
17 words
The method of claim 4 wherein said conformal layer has a thickness of 5 to 10 nm.
Claim 7
Dependent Claim
57 words
The method of claim 1 wherein the step of forming said conformal layer comprises the steps of: depositing a conformal layer of nitride in said at least one isolation trench and on said protective nitride layer; and oxidizing at least a portion of said nitride layer to an oxide so as to form a dual oxide/nitride layer.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said conformal layer has a thickness of 5 to 10 nm.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein said step of filling said trench comprises ozone-assisted deposition of TEOS.
Claim 10
Dependent Claim
25 words
The method of claim 1 wherein said step of depositing a conformal layer is preceded by a step of growing a layer of thermal oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-08 | 2001-12-08 | 2002-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-08 | 2009-12-08 | 2010-06-09 | $7700.00 | Window Closed / Lapsed |