Patent US6890858B2 successfully refreshed from Google Patents.
US6890858B2
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Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines
Assignee: Micron Technology Inc
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Filing: 2002-10-21
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Granted: 2005-05-10
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Expires: 2022-10-21
Abstract
Abstract In one aspect, the invention encompasses a semiconductor processing method of forming a material over an uneven surface topology. A substrate having an uneven surface topology is provided. The uneven surface topology comprises a valley between a pair of outwardly projecting features. A layer of material is formed over the uneven surface topology. The layer comprises outwardly projecting portions over the outwardly projecting features of the surface topology and has a gap over the valley. The layer is etched, and the etching forms protective material within the gap while removing an outermost surface of the layer. The etching substantially does not remove the material from the bottom of the gap. In another aspect, the invention encompasses a semiconductor processing method of forming a material over metal-comprising lines. A first insulative material substrate is provided. A pair of spaced metal-comprising lines are formed over the substrate. The spaced metal-comprising lines define an uneven surface topology which comprises the lines and a valley between the lines. A layer of second insulative material is formed over the uneven surface topology. The layer comprises outwardly projecting portions over the lines and having a gap over the valley. The layer of second insulative material is subjected to an etch which forms a protective material at the bottom of the gap. The protective material substantially prevents the second insulative material from being etched from the bottom of the gap.
Inventors
- 👤 Werner Juengling
- 👤 Kevin G. Donohoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:04
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/064; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
90 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a semiconductor substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley; and etching the layer to remove an outermost surface of the layer and generally simultaneously redeposit said material within the gap.
Claim 2
Dependent Claim
90 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a semiconductor substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley; and etching the layer to remove an outermost surface of the layer and generally simultaneously redeposit said material within the gap.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the material of the layer is an electrically insulative material.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein the etching comprises high density plasma etching.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the material of the layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the etching utilizes at least one compound that includes both a halogen and carbon.
Claim 7
Dependent Claim
79 words
The method of claim 1 wherein the etching occurs in a high density plasma reactor utilizing an etching gas, a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.
Claim 8
Dependent Claim
23 words
The method of claim 6 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.
Claim 9
Dependent Claim
21 words
The method of claim 6 wherein the etching gas consists essentially of one or both of fluorocarbon compounds and hydrofluorocarbon compounds.
Claim 10
Dependent Claim
22 words
The method of claim 6 wherein the plasma is a high density plasma comprising at least about 1×10 9 charges/cm 3 .
Claim 11
Dependent Claim
139 words
A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly disposed portions over the metal-comprising lines and relatively recessed regions between said metal-comprising lines; and subjecting the layer of the second insulative material to a process which removes at least a portion of the second insulative material from said outwardly disposed portions and redeposits at least a portion of the second insulative material within said relatively recessed regions which substantially prevents the second insulative material from being removed from a bottom of said relatively recessed regions.
Claim 12
Dependent Claim
139 words
A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly disposed portions over the metal-comprising lines and relatively recessed regions between said metal-comprising lines; and subjecting the layer of the second insulative material to a process which removes at least a portion of the second insulative material from said outwardly disposed portions and redeposits at least a portion of the second insulative material within said relatively recessed regions which substantially prevents the second insulative material from being removed from a bottom of said relatively recessed regions.
Claim 13
Dependent Claim
30 words
The method of claim 10 wherein the metal-comprising lines consist essentially of materials selected from the group consisting of one or more of aluminum, copper, copper alloys and aluminum alloys.
Claim 14
Dependent Claim
28 words
The method of claim 10 wherein the first and second insulative materials comprise a common composition, said common composition being either doped silicon dioxide or undoped silicon dioxide.
Claim 15
Dependent Claim
29 words
The method of claim 10 wherein the removing comprises high density plasma etching utilizing an etching gas that includes at least one compound comprising both a halogen and carbon.
Claim 16
Dependent Claim
75 words
The method of claim 13 wherein the removing occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350°.
Claim 17
Dependent Claim
19 words
The method of claim 10 wherein the high density plasma comprises at least about 1×10 9 charges/cm 3 .
Claim 18
Dependent Claim
17 words
The method of claim 10 wherein the recessed regions have respective aspect ratios of at least 1.
Claim 19
Dependent Claim
17 words
The method of claim 10 wherein the recessed regions have respective aspect ratios of at least 3.
Claim 20
Dependent Claim
17 words
The method of claim 10 wherein the recessed regions have respective aspect ratios of at least 5.
Claim 21
Dependent Claim
121 words
A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and openings between the projections; providing a first protective material within the openings to at least partially fill the openings; and after the providing of the first protective material, plasma etching an outermost surface of the first layer and generally simultaneously depositing a second protective material within the opening, the first and second protective materials protecting the first insulative material of the first layer from being etched from a bottom of the opening.
Claim 22
Dependent Claim
121 words
A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and openings between the projections; providing a first protective material within the openings to at least partially fill the openings; and after the providing of the first protective material, plasma etching an outermost surface of the first layer and generally simultaneously depositing a second protective material within the opening, the first and second protective materials protecting the first insulative material of the first layer from being etched from a bottom of the opening.
Claim 23
Dependent Claim
26 words
The method of claim 19 wherein the first insulative material comprises either doped or undoped silicon dioxide and is formed by chemical vapor deposition from TEOS.
Claim 24
Dependent Claim
109 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a semiconductor substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of electrically insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley; and etching the layer to remove an outermost surface of the layer and simultaneously form a polymeric material within the gap, the polymeric material substantially preventing removal of the electrically insulative material from a bottom of the gap.
Claim 25
Dependent Claim
109 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a semiconductor substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of electrically insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley; and etching the layer to remove an outermost surface of the layer and simultaneously form a polymeric material within the gap, the polymeric material substantially preventing removal of the electrically insulative material from a bottom of the gap.
Claim 26
Dependent Claim
43 words
The method of claim 21 wherein the semiconductor substrate comprises spaced conductive lines, wherein the outwardly projecting features of the uneven surface topology correspond to the lines and wherein the valley of the uneven surface topology corresponds to the space between the lines.
Claim 27
Dependent Claim
42 words
The method of claim 21 wherein the gap comprises a depth, a bottom surface, and sidewall surfaces extending along the depth to the bottom surface, and wherein the polymeric material is formed along the sidewall surfaces but not along the bottom surface.
Claim 28
Dependent Claim
41 words
The method of claim 21 wherein the gap comprises a depth, a bottom surface, and sidewall surfaces extending along the depth to the bottom surface, and wherein the polymeric material is formed along the sidewall surfaces and along the bottom surface.
Claim 29
Dependent Claim
13 words
The method of claim 21 wherein the etching comprises high density plasma etching.
Claim 30
Dependent Claim
17 words
The method of claim 21 wherein the etching utilizes a gas comprising both a halogen and carbon.
Claim 31
Dependent Claim
79 words
The method of claim 21 wherein the etching occurs in a high density plasma reactor utilizing an etching gas, a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.
Claim 32
Dependent Claim
23 words
The method of claim 27 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.
Claim 33
Dependent Claim
21 words
The method of claim 27 wherein the etching gas consists essentially of one or both of fluorocarbon compounds and hydrofluorocarbon compounds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2008-05-09 | 2008-11-08 | 2009-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-05-09 | 2012-11-08 | 2013-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-05-09 | 2016-11-08 | 2017-05-10 | $7700.00 | Window Closed / Lapsed |