US6271141B2 — Methods of forming materials over uneven surface …

Claim 1

Independent Claim 117 words

A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley, the gap having a lowestmost portion; and etching the layer, the etching forming protective material within the gap while removing an outermost surface of the layer, the etching substantially not removing material of the layer from the lowestmost portion of the gap; the etching comprising high density plasma etching.

Claim 2

Dependent Claim 117 words

A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley, the gap having a lowestmost portion; and etching the layer, the etching forming protective material within the gap while removing an outermost surface of the layer, the etching substantially not removing material of the layer from the lowestmost portion of the gap; the etching comprising high density plasma etching.

Claim 3

Dependent Claim 16 words

The method of claim 1 wherein the material of the layer is an electrically insulative material.

Claim 4

Dependent Claim 23 words

The method of claim 1 wherein the material of the layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.

Claim 5

Dependent Claim 21 words

The method of claim 1 wherein the etching gas comprises at least one compound that includes both a halogen and carbon.

Claim 6

Dependent Claim 79 words

The method of claim 1 wherein the etching occurs in a high density plasma reactor utilizing an etching gas, a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.

Claim 7

Dependent Claim 23 words

The method of claim 5 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.

Claim 8

Dependent Claim 21 words

The method of claim 5 wherein the etching gas consists essentially of one or both of fluorocarbon compounds and hydrofluorocarbon compounds.

Claim 9

Dependent Claim 22 words

The method of claim 5 wherein the plasma is a high density plasma comprising at least about 1×10 9 charges/cm 3 .

Claim 10

Dependent Claim 139 words

A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the lines and having a gap over the valley; and subjecting the layer of second insulative material to an etch which forms a protective material at the bottom of the gap; the protective material substantially preventing the second insulative material from being etched from a bottom of the gap; wherein the etching comprises high density plasma etching utilizing an etching gas that includes at least one compound comprising both a halogen and carbon.

Claim 11

Dependent Claim 139 words

A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the lines and having a gap over the valley; and subjecting the layer of second insulative material to an etch which forms a protective material at the bottom of the gap; the protective material substantially preventing the second insulative material from being etched from a bottom of the gap; wherein the etching comprises high density plasma etching utilizing an etching gas that includes at least one compound comprising both a halogen and carbon.

Claim 12

Dependent Claim 30 words

The method of claim 9 wherein the metal-comprising lines consist essentially of materials selected from the group consisting of one or more of aluminum, copper, copper alloys and aluminum alloys.

Claim 13

Dependent Claim 28 words

The method of claim 9 wherein the first and second insulative materials comprise a common composition, said common composition being either doped silicon dioxide or undoped silicon dioxide.

Claim 14

Dependent Claim 76 words

The method of claim 9 wherein the etching occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.

Claim 15

Dependent Claim 19 words

The method of claim 9 wherein the high density plasma comprises at least about 1×10 9 charges/cm 3 .

Claim 16

Dependent Claim 16 words

The method of claim 9 wherein the gap has an aspect ratio of at least 1.

Claim 17

Dependent Claim 16 words

The method of claim 9 wherein the gap has an aspect ratio of at least 3.

Claim 18

Dependent Claim 16 words

The method of claim 9 wherein the gap has an aspect ratio of at least 5.

Claim 19

Dependent Claim 230 words

A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and having a gap over the space between the projections; depositing a first protective material within the gap to at least partially fill the gap; and after the depositing subjecting the first layer to a first plasma etch utilizing an etching gas, the first plasma etch forming a second protective material within the gap while removing an outermost surface of the first layer of first insulative material, the first and second protective materials preventing first insulative material of the first layer from being removed from a bottom of the gap; wherein the first plasma etch utilizes a high density plasma and occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C., a ring temperature of from about 150° C. to about 350° C., and an etching gas comprising at least one of a fluorocarbon or a hydrofluorocarbon.

Claim 20

Dependent Claim 230 words

A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and having a gap over the space between the projections; depositing a first protective material within the gap to at least partially fill the gap; and after the depositing subjecting the first layer to a first plasma etch utilizing an etching gas, the first plasma etch forming a second protective material within the gap while removing an outermost surface of the first layer of first insulative material, the first and second protective materials preventing first insulative material of the first layer from being removed from a bottom of the gap; wherein the first plasma etch utilizes a high density plasma and occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C., a ring temperature of from about 150° C. to about 350° C., and an etching gas comprising at least one of a fluorocarbon or a hydrofluorocarbon.

Claim 21

Dependent Claim 26 words

The method of claim 17 wherein the first insulative material comprises either doped or undoped silicon dioxide and is formed by chemical vapor deposition from TEOS.

Claim 22

Dependent Claim 20 words

The method of claim 17 wherein the depositing the protective material comprises chemical vapor deposition utilizing a hydrocarbon precursor material.

Claim 23

Dependent Claim 41 words

The method of claim 17 further comprising: after subjecting the first insulative material to the plasma etch, providing a second layer of a second insulative material over the first insulative material; and subjecting the second layer to a second plasma etch.

Claim 24

Dependent Claim 29 words

The method of claim 20 wherein the first and second insulative materials comprise a common insulative material, and wherein the first and second plasma etches utilize common etching conditions.

Claim 25

Dependent Claim 141 words

A semiconductor processing method of forming an insulative material over and between conductive lines, comprising: providing a substrate having a pair of spaced conductive lines formed thereover; forming a first layer of insulative material over the substrate and the spaced conductive lines, the first layer comprising outwardly projecting portions over the lines and having a gap over the space between the lines; subjecting the first layer to a first high density plasma etch to remove at least some of the material of the first layer from over the conductive lines; the first plasma etch utilizing an etching gas that comprises at least one compound that includes both a halogen and carbon and substantially not etching the insulative material of the first layer from the bottom of the gap; and providing a second layer of insulative material over the etched first layer.

Claim 26

Dependent Claim 141 words

A semiconductor processing method of forming an insulative material over and between conductive lines, comprising: providing a substrate having a pair of spaced conductive lines formed thereover; forming a first layer of insulative material over the substrate and the spaced conductive lines, the first layer comprising outwardly projecting portions over the lines and having a gap over the space between the lines; subjecting the first layer to a first high density plasma etch to remove at least some of the material of the first layer from over the conductive lines; the first plasma etch utilizing an etching gas that comprises at least one compound that includes both a halogen and carbon and substantially not etching the insulative material of the first layer from the bottom of the gap; and providing a second layer of insulative material over the etched first layer.

Claim 27

Dependent Claim 17 words

The method of claim 22 wherein the first plasma etch occludes the gap with a protective material.

Claim 28

Dependent Claim 30 words

The method of claim 22 further comprising, before subjecting the first layer to the plasma etch, depositing a protective material within the gap to at least partially fill the gap.

Claim 29

Dependent Claim 20 words

The method of claim 24 wherein the depositing the protective material comprises chemical vapor deposition utilizing a hydrocarbon precursor material.

Claim 30

Dependent Claim 18 words

The method of claim 22 further comprising subjecting the second layer to a second high density plasma etch.

Claim 31

Dependent Claim 28 words

The method of claim 26 wherein the first and second layers comprise the same material, and wherein the first and second plasma etches utilize the same etching conditions.

Claim 32

Dependent Claim 24 words

The method of claim 22 wherein the material of the first layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.

Claim 33

Dependent Claim 78 words

The method of claim 22 wherein the first plasma etch occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.

Claim 34

Dependent Claim 23 words

The method of claim 29 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-08-06	2005-02-05	2005-08-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-08-06	2009-02-05	2009-08-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-08-06	2013-02-05	2013-08-07	$7700.00	Window Closed / Lapsed

Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines

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