US5798016A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
Assignee: International Business Machines Corp
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Filing: 1994-03-08
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Granted: 1998-08-25
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Expires: 2014-03-08
Abstract
Abstract The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100° C. to 600° C. to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.
Inventors
- 👤 Gottlieb Stefan Oehrlein
- 👤 David Vender
- 👤 Ying Zhang
- 👤 Marco Haverlag
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:49
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
87 words
An apparatus for etching a device having a flow of a plasma and preventing the undesirable deposition of a film comprising: a source of fluorocarbon gas; an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; means for heating said surface to and maintaining said surface at a temperature between 290° C. to 310° C. to impede the formation of a deposition film on said surface; and means for generating a plasma from the source fluorocarbon gas.
Claim 2
Independent Claim
87 words
An apparatus for etching a device having a flow of a plasma and preventing the undesirable deposition of a film comprising: a source of fluorocarbon gas; an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; means for heating said surface to and maintaining said surface at a temperature between 290° C. to 310° C. to impede the formation of a deposition film on said surface; and means for generating a plasma from the source fluorocarbon gas.
Claim 3
Dependent Claim
17 words
The apparatus of claim 1, wherein said surface does not interfere with the flow of the plasma.
Claim 4
Dependent Claim
16 words
The apparatus of claim 1, wherein said surface is heated to a temperature of 300° C.
Claim 5
Dependent Claim
15 words
The apparatus of claim 1, wherein said surface comprises the walls of the etching chamber.
Claim 6
Dependent Claim
16 words
The apparatus of claim 1, wherein said surface comprises a liner disposed within the etching chamber.
Claim 7
Dependent Claim
17 words
The apparatus of claim 1, wherein said surface is disposed on the walls of the etching chamber.
Claim 8
Dependent Claim
25 words
The apparatus of claim 1, wherein said surface is coated with a material to reduce erosion of said surface in the flow of the plasma.
Claim 9
Dependent Claim
34 words
The apparatus of claim 7, wherein said surface is coated with a material selected from the group consisting of Al 2 O 3 , Y 2 O 3 and SC 2 O 3 .
Claim 10
Dependent Claim
20 words
The apparatus of claim 1, wherein said surface comprises a material selected from the group consisting of metals and dielectrics.
Claim 11
Dependent Claim
23 words
The apparatus of claim 9, wherein said surface comprises a material selected from the group consisting of stainless steel, ceramic, quartz and aluminum.
Claim 12
Dependent Claim
28 words
The apparatus of claim 1, wherein the etching chamber is one of a dry etching chamber, which uses a fluorocarbon gas mixture, and a reactive ion etching chamber.
Claim 13
Dependent Claim
78 words
In a system for etching a device having a flow of a plasma, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface; and a plasma source having a resonance frequency biasing.
Claim 14
Dependent Claim
78 words
In a system for etching a device having a flow of a plasma, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber; means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface; and a plasma source having a resonance frequency biasing.
Claim 15
Dependent Claim
24 words
The apparatus of claim 12, wherein the plasma source is one of an electron resonance plasma source and a resonance frequency biasing plasma source.
Claim 16
Dependent Claim
31 words
The apparatus of claim 1 wherein an oxide is formed on the substrate and the system further comprises means for etching the oxide using the plasma generated from the fluorocarbon gas.
Claim 17
Dependent Claim
35 words
The apparatus of claim 1 further comprising means for generating the plasma using a gas selected from the group consisting of CHF 3 (100%), CHF 3 /H 2 (30%) and CHF 3 /H 2 (50%).
Claim 18
Dependent Claim
72 words
In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having a wall defining the etching chamber, said wall having a surface coated with Y 2 O 3 ; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 19
Dependent Claim
72 words
In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having a wall defining the etching chamber, said wall having a surface coated with Y 2 O 3 ; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 20
Dependent Claim
16 words
The apparatus of claim 4, wherein said surface is coated with Sc 2 O 3 .
Claim 21
Dependent Claim
16 words
The apparatus of claim 4, wherein said surface is coated with Al 2 O 3 .
Claim 22
Dependent Claim
22 words
The apparatus of claim 5, wherein said liner is coated with a material to reduce erosion of said liner in said plasma.
Claim 23
Dependent Claim
83 words
In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a liner disposed in said etching chamber, said liner having a surface coated with Y 2 O 3 to reduce erosion of said liner in said plasma; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 24
Dependent Claim
83 words
In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a liner disposed in said etching chamber, said liner having a surface coated with Y 2 O 3 to reduce erosion of said liner in said plasma; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 25
Dependent Claim
17 words
In a apparatus of claim 19, wherein said liner is coated with Sc 2 O 3 .
Claim 26
Dependent Claim
16 words
The apparatus of claim 19, wherein said liner is coated with Al 2 O 3 .
Claim 27
Dependent Claim
93 words
In a system for having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber, where said surface is coated with Y 2 O 3 to reduce erosion of said surface in the flow of the plasma; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 28
Dependent Claim
93 words
In a system for having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising: an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber, where said surface is coated with Y 2 O 3 to reduce erosion of said surface in the flow of the plasma; and means for heating said surface to a temperature between 200° C. to 325° C. to impede the formation of a deposition film on said surface.
Claim 29
Dependent Claim
16 words
The apparatus of claim 8, wherein said surface is coated with Sc 2 O 3 .
Claim 30
Dependent Claim
16 words
The apparatus of claim 8, wherein said surface is coated with Al 2 O 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-24 | 2002-02-23 | 2002-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-24 | 2006-02-23 | 2006-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-24 | 2010-02-23 | 2010-08-25 | $7700.00 | Window Closed / Lapsed |