US5362361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching method
Assignee: Sony Corp
•
Filing: 1992-04-24
•
Granted: 1994-11-08
•
Expires: 2012-04-24
Abstract
Abstract A dry etching method for anisotropic etching of target material layers at low temperature without using CFC-based gases whereby excessive sidewall protection effects are inhibited and etching reproducibility is improved. In dry etching using S 2 F 2 , sidewalls are protected by depositing sulfur (S) dissociated in plasma on the sidewalls. However, the sulfur thus formed will also deposit on the inside wall of an etching chamber, increasing with time the S/F ratio of an etching reaction system. To prevent this, a first heater is used to heat the lower inside wall of a bell jar of an magnetically-enhanced microwave plasma etching apparatus during etching. Then, a second heater and a third heater are used to heat the outer periphery of a wafer supporting electrode and the exposed portion of a cooling pipe, respectively, so that the atmosphere in the bell jar is kept clean with an appropriate S/F ratio. Thus, the present invention uses sulfur deposition to allow highly reproducible etching of Si-based material layers, silicon compound material layers, and aluminum-based material layers.
Inventors
- 👤 Tetsuya Tatsumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:42
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/24; H10P50/242; H10P50/268
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
109 words
A dry etching method comprising: (a) a step of heating at least one portion of the wall of an etching chamber to a higher temperature than room temperature, and (b) a step of cooling a target substrate to a lower temperature than room temperature while plasma etching a target material layer of said target substrate by using etching gas containing at least one compound selected from S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .
Claim 2
Dependent Claim
109 words
A dry etching method comprising: (a) a step of heating at least one portion of the wall of an etching chamber to a higher temperature than room temperature, and (b) a step of cooling a target substrate to a lower temperature than room temperature while plasma etching a target material layer of said target substrate by using etching gas containing at least one compound selected from S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .
Claim 3
Dependent Claim
28 words
A dry etching method as claimed in claim 1 wherein said target material layer is composed of any one of single crystal silicon, polysilicon, polycide, and aluminum-based material.
Claim 4
Dependent Claim
117 words
A dry etching method comprising: (a) a first step of cooling a target substrate and a member in an etching chamber to a lower temperature than room temperature while plasma etching a target material layer of said target substrate by using etching gas containing at least one compound selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 , and (b) a second step of subliming sulfur deposits on said member in the etching chamber by heating said member.
Claim 5
Dependent Claim
117 words
A dry etching method comprising: (a) a first step of cooling a target substrate and a member in an etching chamber to a lower temperature than room temperature while plasma etching a target material layer of said target substrate by using etching gas containing at least one compound selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 , and (b) a second step of subliming sulfur deposits on said member in the etching chamber by heating said member.
Claim 6
Dependent Claim
41 words
A dry etching method as claimed in claim 3 wherein both said first step and said second step are completed by heating at least a part of a sidewall portion of said etching chamber to a higher temperature than room temperature.
Claim 7
Dependent Claim
28 words
A dry etching method as claimed in claim 3 wherein said target material layer is composed of any one of single crystal silicon, polysilicon, polycide, and aluminum-based material.
Claim 8
Dependent Claim
27 words
A dry etching method as claimed in claim 3 wherein said member in said etching chamber is selected from a wafer supporting electrode and a cooling pipe.
Claim 9
Dependent Claim
152 words
A dry etching method comprising providing a plasma etching chamber having a target substrate support provided with cooling means, placing a target substrate on said target substrate support, cooling the target substrate support to cool the target substrate to a temperature lower than room temperature, while heating portions of said etching chamber disposed away from said substrate support, plasma etching a target material layer of the target substrate by using etching gas containing at least one compound selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 and SBr 2 so that sulfur deposits occurring during the plasma etching on said heated portions are sublimed during said etching to maintain the ratio of sulfur to halogen substantially constant.
Claim 10
Dependent Claim
152 words
A dry etching method comprising providing a plasma etching chamber having a target substrate support provided with cooling means, placing a target substrate on said target substrate support, cooling the target substrate support to cool the target substrate to a temperature lower than room temperature, while heating portions of said etching chamber disposed away from said substrate support, plasma etching a target material layer of the target substrate by using etching gas containing at least one compound selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 and SBr 2 so that sulfur deposits occurring during the plasma etching on said heated portions are sublimed during said etching to maintain the ratio of sulfur to halogen substantially constant.
Claim 11
Dependent Claim
30 words
A dry etching method according to claim 7, which includes, subsequent to the plasma etching, heating the target substrate support to sublime the sulfur therefrom and from said target substrate.
References Cited (Backward Citations)
US4430547A
Cited
US4943344A
Cited
US4842683A
Cited
JPS63181430A
Cited
US5147500A
Cited
US4911812A
Cited
US5085750A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |