Dry etching method

Claim 2

A dry etching method comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched, wherein said surface of said article to be etched is made of a material selected from the group consisting of Si, Al, W, SiO 2 , Si 3 N 4 and a silicide; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100 V and controlling the temperature of the article to be etched at lower than 0° C. so as to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100.

Claim 3

A dry etching method according to claim 1, wherein the etching apparatus is one of a microwave plasma etching apparatus and a magnetron discharge type reactive etching apparatus, and wherein the gas pressure is put in a range from 4 to 10 m Torr, the bias voltage is put in a range from -10 to -50 V, and the temperature of the article to be etched is put in a range from -100 to -135° C.

Claim 4

A dry etching method according to claim 2, wherein said etching gas is free of carbon and silicon.

Claim 5

A dry etching method according to claim 3, wherein said etching gas contains at least one gas selected from the group consisting of SF 6 , NF 3 , PF 3 , F 2 , Cl 2 , Br 2 and BCl 3 .

Claim 6

A dry etching method according to claim 1, wherein said etching gas is free of carbon and silicon.

Claim 7

A dry etching method according to claim 5, wherein said etching gas contains at least one gas selected from the group consisting of SF 6 , NF 3 , PF 3 , F 2 , Cl 2 , Br 2 and BCl 3 .

Claim 8

A dry etching method comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100 V and controlling the temperature of the article to be etched to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100, wherein the etching apparatus is a reactive ion etching apparatus, and wherein the gas pressure is put in a range from 60 to 100 m Torr, the bias voltage is put in a range from -30 to -100 V, and the temperature of the article to be etched is put in a range from -90 to -135° C.

Claim 9

A dry etching method comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100 V and controlling the temperature of the article to be etched to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100, wherein the etching apparatus is a reactive ion etching apparatus, and wherein the gas pressure is put in a range from 60 to 100 m Torr, the bias voltage is put in a range from -30 to -100 V, and the temperature of the article to be etched is put in a range from -90 to -135° C.

Claim 10

A dry etching method according to claim 7, wherein the power density supplied to the reactive ion etching apparatus lies in a range from 0.2 to 0.4 W/cm 2 .

Claim 11

A dry etching method according to claim 7, wherein said etching gas is free of carbon and silicon.

Claim 12

A dry etching method according to claim 9, wherein said etching gas contains at least one gas selected from the group consisting of SF 6 , Cl 2 , and BCl 3 .

Claim 13

A dry etching method comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100 V and controlling the temperature of the article to be etched to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100, wherein the etching apparatus is the microwave plasma etching apparatus, and an electric power of 200 to 400 W is supplied to the mcirowave plasma etching apparatus and wherein the gas pressure is put in a range from 4 to 10 m Torr, the bias voltage is put in a range from -10 to -50 V, and the temperature of the article to be etched is put in a range from -100° to -135° C.

Claim 14

A dry etching method comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100 V and controlling the temperature of the article to be etched to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100, wherein the etching apparatus is the microwave plasma etching apparatus, and an electric power of 200 to 400 W is supplied to the mcirowave plasma etching apparatus and wherein the gas pressure is put in a range from 4 to 10 m Torr, the bias voltage is put in a range from -10 to -50 V, and the temperature of the article to be etched is put in a range from -100° to -135° C.

Claim 15

A dry etching method according to claim 11, wherein said etching gas is free of materials which can deposit a film on the article to be etched.

Claim 16

A dry etching method according to claim 12, wherein the article to be etched is a film made of a material selected from the group consisting of SiO 2 and Si 3 N 4 and wherein said etching gas contains a fluorocarbon gas.

Claim 17

A dry etching method according to claim 13, wherein said article to be etched comprises a film of SiO 2 and said fluorocarbon gas is at least one of C 3 F 8 , C 2 F 6 and CHF 3 .

Claim 18

A dry etching method according to claim 13, wherein said article to be etched comprises a film of Si 3 N 4 and said fluorocarbon gas is at least one gas selected from the group consisting of C 3 F 8 , C 2 F 6 and CHF 3 or a gas mixture of CF 4 and O 2 .

Claim 19

A dry etching method, comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100V and controlling the temperature of the article to be etched at lower than 0° C. so as to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100; wherein the etching apparatus is a magnetron discharge type reactive etching apparatus, and an electric power of 0.2 to 0.4 W is supplied to the magnetron discharge type reactive etching apparatus and wherein the gas pressure is put in a range from 4 to 10 m Torr, the bias voltage is put in a range from -10 to -50 V, and the temperature of the article to be etching is put in a range from -100 to -135° C.

Claim 20

A dry etching method, comprising the steps of: disposing an article to be etched in the reaction chamber of an etching apparatus, a mask made of a photoresist film having a predetermined pattern being formed on a surface of the article to be etched; and putting the article to be etched in contact with the plasma of an etching gas while controlling the pressure of said etching gas, applying a bias voltage in a range from -10 to -100V and controlling the temperature of the article to be etched at lower than 0° C. so as to etch the surface of the article to be etched in a condition that the gas pressure in the reaction chamber, the bias voltage applied to the article to be etched and the temperature of the article to be etched are set as to make it possible to make the etching rate for the article to be etched higher than 0.5 μm/min, to make a ratio of the etching rate for the article to be etched to the etching rate for the mask greater than ten, and to make a ratio of the length of side etching in the article to be etched to the depth of etching in the article to be etched less than 1/100; wherein the etching apparatus is a magnetron discharge type reactive etching apparatus, and an electric power of 0.2 to 0.4 W is supplied to the magnetron discharge type reactive etching apparatus and wherein the gas pressure is put in a range from 4 to 10 m Torr, the bias voltage is put in a range from -10 to -50 V, and the temperature of the article to be etching is put in a range from -100 to -135° C.