US4786361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching process
Assignee: Toshiba Corp
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Filing: 1987-03-05
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Granted: 1988-11-22
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Expires: 2007-03-05
Abstract
Abstract A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10 -2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.
Inventors
- 👤 Makoto Sekine
- 👤 Haruo Okano
- 👤 Yasuhiro Horiike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:20
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
117 words
A dry etching process, comprising the steps of: placing a workpiece with an etching mask formed on the surface thereof, on a first electrode disposed in a container; generating a magnetic field of a closed loop on that side of a second electrode disposed in said container which faces said first electrode, so as to extend said magnetic field from said second electrode to said first electrode, and applying a high frequency power across said first and second electrodes; supplying a feed gas containing an etching gas into said container; and evacuating said container to a set pressure in said container at a level of at least 2×10 -4 Torrs and of less than 10 -2 Torrs.
Claim 2
Dependent Claim
117 words
A dry etching process, comprising the steps of: placing a workpiece with an etching mask formed on the surface thereof, on a first electrode disposed in a container; generating a magnetic field of a closed loop on that side of a second electrode disposed in said container which faces said first electrode, so as to extend said magnetic field from said second electrode to said first electrode, and applying a high frequency power across said first and second electrodes; supplying a feed gas containing an etching gas into said container; and evacuating said container to a set pressure in said container at a level of at least 2×10 -4 Torrs and of less than 10 -2 Torrs.
Claim 3
Dependent Claim
24 words
The process according to claim 1, wherein said pressure in said container is set at a level of 2×10 -4 to 8×10 -3 torrs.
Claim 4
Dependent Claim
24 words
The process according to claim 2, wherein said pressure in said container is set at a level of 3×10 -3 to 8×10 -3 torrs.
Claim 5
Dependent Claim
30 words
The process according to claim 1, wherein the surface of said workpiece is a material selected from the group consisting of Si, Ge, GaAs, Al, SiO 2 and metal silicide.
Claim 6
Dependent Claim
54 words
The process according to claim 1, wherein said magnetic field is generated by a permanent magnet which is of a bar type with an alternate array of N and S poles or of a closed loop type with an array of N and S poles, said permanent magnet being movable along said second electrode.
Claim 7
Dependent Claim
17 words
The process according to claim 1, wherein said magnetic field is generated by a linear motor stator.
Claim 8
Dependent Claim
23 words
The process according to claim 1, wherein a distance between the first and second electrodes is set to be 10 to 100 mm.
Claim 9
Dependent Claim
22 words
The process according to claim 1, wherein said second electrode is covered with an insulation at a surface facing said first electrode.
Claim 10
Dependent Claim
24 words
The process according to claim 1, wherein said second electrode is made of a material which will not be etched by said feed gas.
Claim 11
Dependent Claim
19 words
The process according to claim 1, wherein said feed gas is uniformly blown onto the surface of said workpiece.
Claim 12
Dependent Claim
20 words
The process according to claim 1, wherein said feed gas is flowed at a flow rate of above 10 cc/min.
Claim 13
Dependent Claim
16 words
The process according to claim 1, wherein said etching gas is a gas containing halogen atoms.
Claim 14
Dependent Claim
35 words
The process according to claim 1, wherein said etching gas is selected from the group consisting of Cl 2 , F 2 , CHF 3 and a mixture of CH 4 and H 2 .
Claim 15
Dependent Claim
24 words
The process according to claim 1, wherein said feed gas further contains a deposition gas whereby sloped wall etching is made on said workpiece.
Claim 16
Dependent Claim
23 words
The process according to claim 14, wherein said deposition gas is a gas containing carbon and hydrogen atoms or carbon and halogen atoms.
Claim 17
Dependent Claim
19 words
The process according to claim 15, wherein said deposition gas is a CHCl 3 or a CHF 3 gas.
References Cited (Backward Citations)
US4222838A
Cited
US4331486A
Cited
US4399014A
Cited
JPS58130530A
Cited
US4522844A
Cited
US4464223A
Cited
US4464223B1
Cited
US4632718A
Cited
US4600492A
Cited
US4631106A
Cited
US4668337A
Cited
US4668365A
Cited
JPS6260867A
Cited
JPS6270569A
Cited
JPS6272121A
Cited
US4668338A
Cited
US4654118A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |