US4331486A
Expired / Lapsed
US
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Process for treating semiconductor devices under atomic hydrogen plasma
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1980-07-02
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Granted: 1982-05-25
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Expires: 2000-07-02
Abstract
Abstract The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.
Inventors
- 👤 Andre Chenevas-Paule
- 👤 Vincent LE Goascoz
- 👤 Pierre Viktorovitch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:20
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/024
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
36 words
A process for treating semiconductor devices comprising the steps of producing a hydrogen plasma in the vicinity of said devices, and further the step of removing the positively polarized particles of the plasma from said devices.
Claim 2
Dependent Claim
36 words
A process for treating semiconductor devices comprising the steps of producing a hydrogen plasma in the vicinity of said devices, and further the step of removing the positively polarized particles of the plasma from said devices.
Claim 3
Dependent Claim
48 words
A process according to claim 1, further including the steps of producing a hydrogen plasma by means of a capacitive system having two plane, parallel electrodes polarized so as to form an anode and a cathode, and positioning the semiconductor device between the electrodes level with the anode.
Claim 4
Dependent Claim
55 words
A process for treating semiconductor devices, wherein said process comprises the steps of producing a hydrogen plasma in the vicinity of said devices, of removing the positively polarized particles of the plasma from said devices, and of heating the semiconductor device to a temperature between 25° and 500° C. during the production of the plasma.
Claim 5
Dependent Claim
55 words
A process for treating semiconductor devices, wherein said process comprises the steps of producing a hydrogen plasma in the vicinity of said devices, of removing the positively polarized particles of the plasma from said devices, and of heating the semiconductor device to a temperature between 25° and 500° C. during the production of the plasma.
Claim 6
Dependent Claim
47 words
A process according to claim 3, wherein said process comprises producing a hydrogen plasma by means of a capacitive system having two plane, parallel electrodes polarized so as to form an anode and a cathode, the semiconductor device being positioned between the electrodes level with the anode.
Claim 7
Dependent Claim
19 words
A process according to claim 4, wherein the electrodes are subject to a d.c. voltage close to 2 kV.
Claim 8
Dependent Claim
31 words
A process according to claim 4, wherein the electrodes are subject to an a.c. voltage between 1.2 and 1.6 kV. peak to peak and whose frequency is close to 13 mHz.
Claim 9
Dependent Claim
51 words
A process for treating semiconductor devices, wherein said process comprises the steps of producing a hydrogen plasma in the vicinity of said devices, of removing the positively polarized particles of the plasma from said devices, and of placing the semiconductor device under a vacuum between 10 -1 and 10 -2 Torr.
Claim 10
Dependent Claim
51 words
A process for treating semiconductor devices, wherein said process comprises the steps of producing a hydrogen plasma in the vicinity of said devices, of removing the positively polarized particles of the plasma from said devices, and of placing the semiconductor device under a vacuum between 10 -1 and 10 -2 Torr.
Claim 11
Dependent Claim
23 words
A process according to claim 7, wherein the pressure value is determined by the hydrogen flow value during the production of the plasma.
Claim 12
Dependent Claim
51 words
A process according to claim 7 or claim 8, wherein said process further comprises producing a hydrogen plasma by means of a capacitive system having two plane, parallel electrodes polarized so as to form an anode and a cathode, the semiconductor device being positioned between the electrodes level with the anode.
Claim 13
Dependent Claim
19 words
A process according to claim 9, wherein the electrodes are subject to a d.c. voltage close to 2 kV.
Claim 14
Dependent Claim
31 words
A process according to claim 9, wherein the electrodes are subject to an a.c. voltage between 1.2 and 1.6 kV. peak to peak and whose frequency is close to 13 mHz.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-24 | 1985-11-23 | 1986-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-24 | 1989-11-23 | 1990-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-24 | 1993-11-23 | 1994-05-25 | $7700.00 | Window Closed / Lapsed |