US5872061A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etch method for forming residue free fluorine containing plasma etched layers
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 1997-10-27
•
Granted: 1999-02-16
•
Expires: 2017-10-27
Abstract
Abstract A method for forming a patterned fluorine containing plasma etched layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a fluorine containing plasma etchable layer. There is then formed upon the fluorine containing plasma etchable layer a patterned photoresist layer. There is then etched through a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable layer to form a patterned fluorine containing plasma etched layer. The patterned fluorine containing plasma etched layer has a fluoropolymer residue layer formed thereupon. The fluorine containing plasma etch method employs a first etchant gas composition comprising a nitrogen trifluoride etchant gas. Finally, there is stripped through an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched layer. The oxygen containing plasma stripping method employs a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
Inventors
- 👤 Shing-Long Lee
- 👤 Chia Shiung Tsai
- 👤 So Wein Kuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:51
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
179 words
A method for forming a patterned fluorine containing plasma etched layer within a microelectronics fabrication comprising: providing a substrate employed within a microelectronics fabrication; forming over the substrate a fluorine containing plasma etchable layer; forming upon the fluorine containing plasma etchable layer a patterned photoresist layer; etching through use of a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable layer to form a patterned fluorine containing plasma etched layer, the patterned fluorine containing plasma etched layer having a fluoropolymer residue layer formed thereupon, the fluorine containing plasma etch method employing a first etchant gas composition comprising a perfluorocarbon etchant gas, a hydrofluorocarbon etchant gas, a sputtering gas and a nitrogen trifluoride etchant gas; and stripping through use of an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched layer, the oxygen containing plasma stripping method employing a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
Claim 2
Independent Claim
179 words
A method for forming a patterned fluorine containing plasma etched layer within a microelectronics fabrication comprising: providing a substrate employed within a microelectronics fabrication; forming over the substrate a fluorine containing plasma etchable layer; forming upon the fluorine containing plasma etchable layer a patterned photoresist layer; etching through use of a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable layer to form a patterned fluorine containing plasma etched layer, the patterned fluorine containing plasma etched layer having a fluoropolymer residue layer formed thereupon, the fluorine containing plasma etch method employing a first etchant gas composition comprising a perfluorocarbon etchant gas, a hydrofluorocarbon etchant gas, a sputtering gas and a nitrogen trifluoride etchant gas; and stripping through use of an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched layer, the oxygen containing plasma stripping method employing a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein the microelectronics fabrication is chosen from the group of microelectronics fabrications consisting of integrated circuit microelectronics fabrications, solar cell microelectronics fabrications, ceramic packaging microelectronics fabrications and flat panel display microelectronics fabrications.
Claim 4
Dependent Claim
55 words
The method of claim 1 wherein the fluorine containing plasma etchable layer is formed from a fluorine containing plasma etchable material selected from the group of fluorine containing plasma etchable materials consisting of silicon oxide dielectric materials, silicon nitride dielectric materials, silicon oxynitride dielectric materials, silicon materials, tungsten materials, titanium materials, and titanium nitride materials.
Claim 5
Dependent Claim
33 words
The method of claim 1 wherein the first etchant gas composition comprises a carbon tetrafluoride perfluorocarbon etchant gas, a trifluoromethane hydrofluorocarbon etchant gas, an argon sputtering gas and the nitrogen trifluoride etchant gas.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the second etchant gas composition comprises a perfluorocarbon etchant gas and an oxygen etchant gas.
Claim 7
Dependent Claim
22 words
The method of claim 5 wherein the second etchant gas composition comprises a hexafluoroethane perfluorocarbon etchant gas and the oxygen etchant gas.
Claim 8
Dependent Claim
21 words
A microelectronics fabrication having formed therein a fluorine containing plasma etched layer formed in accord with the method of claim 1.
Claim 9
Independent Claim
186 words
A method for forming a patterned fluorine containing plasma etched dielectric layer within a microelectronics fabrication comprising: providing a substrate employed within a microelectronics fabrication; forming over the substrate a fluorine containing plasma etchable dielectric layer; forming upon the fluorine containing plasma etchable dielectric layer a patterned photoresist layer; etching through use of a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable dielectric layer to form a patterned fluorine containing plasma etched dielectric layer, the patterned fluorine containing plasma etched dielectric layer having a fluoropolymer residue layer formed thereupon, the fluorine containing plasma etch method employing a first etchant gas composition comprising a perfluorocarbon etchant gas, a hydrofluorocarbon etchant gas, a sputtering gas and a nitrogen trifluoride etchant gas; and stripping through use of an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched dielectric layer, the oxygen containing plasma stripping method employing a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
Claim 10
Independent Claim
186 words
A method for forming a patterned fluorine containing plasma etched dielectric layer within a microelectronics fabrication comprising: providing a substrate employed within a microelectronics fabrication; forming over the substrate a fluorine containing plasma etchable dielectric layer; forming upon the fluorine containing plasma etchable dielectric layer a patterned photoresist layer; etching through use of a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable dielectric layer to form a patterned fluorine containing plasma etched dielectric layer, the patterned fluorine containing plasma etched dielectric layer having a fluoropolymer residue layer formed thereupon, the fluorine containing plasma etch method employing a first etchant gas composition comprising a perfluorocarbon etchant gas, a hydrofluorocarbon etchant gas, a sputtering gas and a nitrogen trifluoride etchant gas; and stripping through use of an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched dielectric layer, the oxygen containing plasma stripping method employing a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
Claim 11
Dependent Claim
37 words
The method of claim 8 wherein the microelectronics fabrication is chosen from the group of microelectronics fabrications consisting of integrated circuit microelectronics fabrications, solar cell microelectronics fabrications, ceramic packaging microelectronics fabrications and flat panel display microelectronics fabrications.
Claim 12
Dependent Claim
49 words
The method of claim 8 wherein the fluorine containing plasma etchable dielectric layer is formed from a fluorine containing plasma etchable dielectric material selected from the group of fluorine containing plasma etchable dielectric materials consisting of silicon oxide dielectric materials, silicon nitride dielectric materials and silicon oxynitride dielectric materials.
Claim 13
Dependent Claim
33 words
The method of claim 8 wherein the first etchant gas composition comprises a carbon tetrafluoride perfluorocarbon etchant gas, a trifluoromethane hydrofluorocarbon etchant gas, an argon sputtering gas and the nitrogen trifluoride etchant gas.
Claim 14
Dependent Claim
21 words
The method of claim 8 wherein the second etchant gas composition comprises a perfluorocarbon etchant gas and an oxygen etchant gas.
Claim 15
Dependent Claim
22 words
The method of claim 12 wherein the second etchant gas composition comprises a hexafluoroethane perfluorocarbon etchant gas and the oxygen etchant gas.
Claim 16
Dependent Claim
22 words
A microelectronics fabrication having formed therein a fluorine containing plasma etched dielectric layer formed in accord with the method of claim 8.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |