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US5880037A Expired / Lapsed US ⏱️ 0.0 years remaining

Oxide etch process using a mixture of a fluorine-substituted hydrocarbon and acetylene that provides high selectivity to nitride and is suitable for use on surfaces of uneven topography

Assignee: Applied Materials Inc
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Filing: 1997-10-09
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Granted: 1999-03-09
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Expires: 2017-10-09
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Abstract

Abstract A method of plasma etching oxide in the presence of nitride includes contacting the oxide with a mixture of gases including one or more flourine-substituted hydrocarbon etching gases and acetylene. The method exhibits high selectivity to nitride, including nitride on uneven surfaces.

Inventors

  • 👤 Paul Arleo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 08:21
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32871; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3346; H01J2237/3347

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 51 words
A method of plasma etching silicon oxide in the presence of silicon nitride capable of exhibiting high selectivity to silicon nitride, including silicon nitride on uneven surfaces, the method comprising: contacting the silicon oxide with a mixture of gases including a) one or more fluorine-substituted hydrocarbon etching gases; and b) acetylene.
Claim 2
Independent Claim 51 words
A method of plasma etching silicon oxide in the presence of silicon nitride capable of exhibiting high selectivity to silicon nitride, including silicon nitride on uneven surfaces, the method comprising: contacting the silicon oxide with a mixture of gases including a) one or more fluorine-substituted hydrocarbon etching gases; and b) acetylene.
Claim 3
Dependent Claim 18 words
The method of claim 1, and wherein the fluorine-substituted hydrocarbon etching gas is C 4 F 8 .
Claim 4
Dependent Claim 17 words
The method of claim 1, wherein the fluorine-substituted hydrocarbon etching gas is C 2 F 6 .
Claim 5
Dependent Claim 15 words
The method of claim 1, and wherein the mixture of gases includes an inert gas.
Claim 6
Dependent Claim 12 words
The method of claim 4, and wherein the inert gas is argon.
Claim 7
Independent Claim 82 words
A method of plasma etching silicon oxide in the presence of silicon nitride, the method having high selectivity to silicon nitride and comprising: contacting the silicon oxide with a mixture of gases including: a) one or more fluorine-substituted hydrocarbon etching gases selected from C 4 F 8 and C 2 F 6 ; and b) C 2 H 2 , and wherein the amount of C 2 H 2 mixed with the etching gas is 20-70 volume percent of the etching gas.
Claim 8
Independent Claim 82 words
A method of plasma etching silicon oxide in the presence of silicon nitride, the method having high selectivity to silicon nitride and comprising: contacting the silicon oxide with a mixture of gases including: a) one or more fluorine-substituted hydrocarbon etching gases selected from C 4 F 8 and C 2 F 6 ; and b) C 2 H 2 , and wherein the amount of C 2 H 2 mixed with the etching gas is 20-70 volume percent of the etching gas.
Claim 9
Dependent Claim 27 words
The method of claim 6, and wherein the amount of C 2 H 2 mixed with the etching gas is 30-60 volume percent of the etching gas.
Claim 10
Independent Claim 13 words
The method of 6, wherein the mixture of gases includes an inert gas.
Claim 11
Independent Claim 13 words
The method of 6, wherein the mixture of gases includes an inert gas.
Claim 12
Dependent Claim 12 words
The method of claim 7, and wherein the inert gas is argon.

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3.5 Years (Year 4) 2002-03-08 2002-09-07 2003-03-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-03-08 2006-09-07 2007-03-09 $3760.00 Window Closed / Lapsed
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