Production method of bipolar integrated circuit containing i2 l

Abstract

Abstract PURPOSE:To increase electric current amplification rate by forming the first layer wiring on a collector layer of I<2> L part to be equal to, or smaller than its collector layer area, shortening the intervals of collector layers, and improving the area ratio of the collector layer against the base layer. CONSTITUTION:An n-epi layer 23 on a p<->type Si base plate 21 is surrounded by an n<+> planted layer 22 and a p<+> separating layer. Within this island are made a p<-> base layer 25, n<+> connecting layer 26, an outside base layer 27. A proliferation window, formed on SiO2 28, is covered with PSG 30, performing P proliferation to make a collector layer 31 and an emitter layer 32. An opening smaller than the proliferation window is formed to PSG on the layers 31, 32, high density poly-Si is layed by CVD method, and the first wiring layer 34 between the layers 31-32 are selectively formed. Next, PSG 35 is layed, selectively opened, attached with Al through vaporization for selectively corrosive carving to compose an earth 37, an injector 38, an input part 39 as the second wiring layer. This structure improves the property of I<2> L device of dual layer wiring structure.

Inventors

• 👤 Osamu Ozawa

Bibliographic Details