EP0644584A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improvement on selectivity in etching an oxidation film in a method for fabricating a semiconductor device
Assignee: NEC Corp
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Filing: 1994-09-19
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Granted: —
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Expires: 2014-09-19
Abstract
Abstract In a step of forming a through-hole through an oxidation film in dry-etching the oxidation film by using fluorocarbon, a deposition film is formed on an etching surface to include carbon of more than 50%, preferably 80%, and fluorine of less than 50%, preferably 20%. Thus, a high selectivities to silicon, silicon nitride and titanium nitride are obtained.
Inventors
- 👤 Takeshi C/O Nec Corporation Akimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 01:28
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
69 words
In a method for fabricating a semiconductor device in which an oxidation film is dry-etched to provide a hole therethrough by using fluorocarbon gas, said method, comprising the step of: depositing a deposition film on an etching surface of said oxidation film and a surface of a layer under said oxidation layer in plasma, said deposition film including carbon of more than 50% and fluorine of less than 50%.
Claim 2
Dependent Claim
35 words
A method for fabricating a semiconductor device, according to claim 1, wherein; said fluorocarbon gas is mixed gas of methane trifluoride and carbon monoxide, a mixing ratio of said carbon monoxide being more than 80%.
Claim 3
Dependent Claim
35 words
A method for fabricating a semiconductor device, according to claim 1, wherein: said fluorocarbon gas is mixed gas of methane quaternary-fluoride and carbon monoxide, a mixing ratio of said carbon monoxide being more than 80%.
Claim 4
Dependent Claim
42 words
A method for fabricating a semiconductor device, according to claim 1, wherein: said fluorocarbon gas is mixed gas of one selected from ethane fluoride, propane fluoride and butane fluoride, and carbon monoxide, a mixing ratio of said carbon being more than 80%.
Claim 5
Dependent Claim
23 words
A method for fabricating a semiconductor device, according to claim 1, wherein: said plasma has a density of more than 5 x 10¹²cm⁻³.
References Cited (Backward Citations)
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