US6479388B2
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Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines
Assignee: Micron Technology Inc
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Filing: 2001-06-06
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Granted: 2002-11-12
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Expires: 2021-06-06
Abstract
Abstract In one aspect, the invention encompasses a semiconductor processing method of forming a material over an uneven surface topology. A substrate having an uneven surface topology is provided. The uneven surface topology comprises a valley between a pair of outwardly projecting features. A layer of material is formed over the uneven surface topology. The layer comprises outwardly projecting portions over the outwardly projecting features of the surface topology and has a gap over the valley. The layer is etched, and the etching forms protective material within the gap while removing an outermost surface of the layer. The etching substantially does not remove the material from the bottom of the gap. In another aspect, the invention encompasses a semiconductor processing method of forming a material over metal-comprising lines. A first insulative material substrate is provided. A pair of spaced metal-comprising lines are formed over the substrate. The space metal-composing lines define an uneven surface topology which comprises the lines and a valley between the lines. A layer of second insulative material is formed over the uneven surface topology. The layer comprises outwardly projecting portions over the lines and having a gap over the valley. The layer of second insulative material is subjected to an etch which forms a protective material at the bottom of the gap. The protective material substantially prevents the second insulative material from being etched from the bottom of the gap.
Inventors
- 👤 Werner Juengling
- 👤 Kevin G. Donohoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/064; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
110 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley, the gap having a lowestmost portion; and etching the layer, the etching formula protective material within the gap while removing an outermost surface of the layer, the etching substantially not removing material of the layer from the lowermost portion of the gap.
Claim 2
Dependent Claim
110 words
A semiconductor processing method of forming a material over an uneven surface topology, comprising: providing a substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features; forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley, the gap having a lowestmost portion; and etching the layer, the etching formula protective material within the gap while removing an outermost surface of the layer, the etching substantially not removing material of the layer from the lowermost portion of the gap.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the material of the layer is an electrically insulative material.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein the etching comprises high density plasma etching.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the material of the layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the etching gas comprises at least one compound that includes both a halogen and carbon.
Claim 7
Dependent Claim
79 words
The method of claim 1 wherein the etching occurs in a high density plasma reactor utilizing an etching gas, a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.
Claim 8
Dependent Claim
23 words
The method of claim 6 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.
Claim 9
Dependent Claim
22 words
The method of claim 6 , wherein the etching gas consists essentially of one or both of fluorocarbon compounds and hydrofluorocarbon compounds.
Claim 10
Dependent Claim
22 words
The method of claim 6 wherein the plasma is a high density plasma comprising at least about 1×10 9 charges/cm 3 .
Claim 11
Dependent Claim
29 words
The method of claim 1 wherein the gap comprises sidewalls elevationally above the lowermost portion, and wherein the protective material covers an entirety of the sidewalls of the gap.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein the etching forms the protective material substantially covering the lowermost portion of the gap.
Claim 13
Dependent Claim
33 words
The method of claim 1 wherein the gap comprises sidewalls elevationally above the lowermost portion, and wherein the etching forms the protective material substantially covering the lowermost portion and sidewalls of the gap.
Claim 14
Dependent Claim
115 words
A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the lines and having a gap over the valley; and subjecting the layer of second insulative material to an etch which forms a protective material at the bottom of the gap; the protective material substantially preventing the second insulative material from being etched from a bottom of the gap.
Claim 15
Dependent Claim
115 words
A semiconductor processing method of forming a material over metal-comprising lines, comprising: providing a first insulative material substrate; forming a pair of spaced metal-comprising lines over the substrate; the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines; forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the lines and having a gap over the valley; and subjecting the layer of second insulative material to an etch which forms a protective material at the bottom of the gap; the protective material substantially preventing the second insulative material from being etched from a bottom of the gap.
Claim 16
Dependent Claim
30 words
The method of claim 13 wherein the metal-comprising lines consist essentially of materials selected from the group consisting of one or more of aluminum, copper, copper alloys and aluminum alloys.
Claim 17
Dependent Claim
28 words
The method of claim 13 wherein the first and second insulative materials comprise a common composition, said common composition being either doped silicon dioxide or undoped silicon dioxide.
Claim 18
Dependent Claim
29 words
The method of claim 13 wherein the etching comprises high density plasma etching utilizing an etching gas that includes at least one compound comprising both a halogen and carbon.
Claim 19
Dependent Claim
76 words
The method of claim 16 wherein the etching occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100° C. to about 250° C. and a ring temperature of from about 150° C. to about 350° C.
Claim 20
Dependent Claim
19 words
The method of claim 13 wherein the high density plasma comprises at least about 1×10 9 charges/cm 3 .
Claim 21
Dependent Claim
16 words
The method of claim 13 wherein the gap has an aspect ratio of at least 1.
Claim 22
Dependent Claim
16 words
The method of claim 13 wherein the gap has an aspect ratio of at least 3.
Claim 23
Dependent Claim
16 words
The method of claim 13 wherein the gap has an aspect ratio of at least 5.
Claim 24
Dependent Claim
29 words
The method of claim 13 wherein the gap comprises sidewalls elevationally above the bottom of the gap, and wherein the protective material covers substantially an entirety of the sidewalls.
Claim 25
Dependent Claim
138 words
A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and having a gap over the space between the projections; depositing a first protective material within the gap to at least partially fill the gap; and after the depositing subjecting the first layer to a first plasma etch utilizing an etching gas, the first plasma etch forming a second protective material within the gap while removing an outermost surface of the first layer of first insulative material, the first and second protective materials preventing first insulative material of the first layer from being removed from a bottom of the gap.
Claim 26
Dependent Claim
138 words
A semiconductor processing method of forming and etching a material, comprising: providing a substrate having spaced projections extending thereover; forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and having a gap over the space between the projections; depositing a first protective material within the gap to at least partially fill the gap; and after the depositing subjecting the first layer to a first plasma etch utilizing an etching gas, the first plasma etch forming a second protective material within the gap while removing an outermost surface of the first layer of first insulative material, the first and second protective materials preventing first insulative material of the first layer from being removed from a bottom of the gap.
Claim 27
Dependent Claim
26 words
The method of claim 23 wherein the first insulative material comprises either doped or undoped silicon dioxide and is formed by chemical vapor deposition from TEOS.
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