Patent US6730954B2 successfully refreshed from Google Patents.
US6730954B2
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US
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Method of depositing tungsten nitride using a source gas comprising silicon
Assignee: Micron Technology Inc
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Filing: 2001-12-05
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Granted: 2004-05-04
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Expires: 2021-12-05
Abstract
Abstract A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
Inventors
- 👤 Scott Meikle
- 👤 Trung Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W20/056
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
41 words
An integrated circuit capacitor comprising: a first electrode formed of polysilicon; a second electrode formed of chemically vapor deposited tungsten nitride formed using a gas comprising nitrogen, tungsten and silicon; and a dielectric layer located between the first and second electrodes.
Claim 2
Dependent Claim
41 words
An integrated circuit capacitor comprising: a first electrode formed of polysilicon; a second electrode formed of chemically vapor deposited tungsten nitride formed using a gas comprising nitrogen, tungsten and silicon; and a dielectric layer located between the first and second electrodes.
Claim 3
Dependent Claim
16 words
The integrated circuit capacitor of claim 1 wherein the dielectric layer is comprised of tantalum oxide.
Claim 4
Dependent Claim
14 words
The integrated circuit capacitor of claim 1 wherein the capacitor is a memory cell.
Claim 5
Dependent Claim
44 words
A capacitor, comprising: a first electrode; a second electrode; and a dielectric disposed between the first and the second electrode, wherein at least one of the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 6
Dependent Claim
44 words
A capacitor, comprising: a first electrode; a second electrode; and a dielectric disposed between the first and the second electrode, wherein at least one of the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 7
Dependent Claim
27 words
The capacitor of claim 4 , wherein both the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 8
Dependent Claim
13 words
The capacitor of claim 4 , wherein the capacitor is a non-planar capacitor.
Claim 9
Dependent Claim
12 words
The capacitor of claim 4 , wherein the dielectric includes tantalum oxide.
Claim 10
Dependent Claim
15 words
The capacitor of claim 4 , wherein the tungsten nitride prevents degradation of the dielectric.
Claim 11
Dependent Claim
34 words
A capacitor, comprising: a first electrode; a dielectric disposed on the first electrode; and a second electrode formed on the dielectric as a layer of tungsten nitride, the layer of tungsten nitride including silicon.
Claim 12
Dependent Claim
34 words
A capacitor, comprising: a first electrode; a dielectric disposed on the first electrode; and a second electrode formed on the dielectric as a layer of tungsten nitride, the layer of tungsten nitride including silicon.
Claim 13
Dependent Claim
13 words
The capacitor of claim 9 , wherein the capacitor is a non-planar capacitor.
Claim 14
Dependent Claim
12 words
The capacitor of claim 9 , wherein the dielectric includes tantalum oxide.
Claim 15
Dependent Claim
19 words
The capacitor of claim 9 , wherein the layer of tungsten nitride is conformally deposited by chemical vapor deposition.
Claim 16
Dependent Claim
48 words
The capacitor of claim 9 , wherein the layer of tungsten nitride is exposed to silicon based materials, and wherein a boundary between the layer of tungsten nitride and the silicon based materials is characterized by a reduced encroachment of the tungsten nitride into the silicon based materials.
Claim 17
Dependent Claim
18 words
The capacitor of claim 9 , wherein the first electrode is formed as a conformal polycrystalline silicon layer.
Claim 18
Dependent Claim
35 words
A capacitor, comprising: a first electrode formed as a layer of tungsten nitride, the layer of tungsten nitride including silicon; a dielectric disposed on the first electrode; and a second electrode formed on the dielectric.
Claim 19
Dependent Claim
35 words
A capacitor, comprising: a first electrode formed as a layer of tungsten nitride, the layer of tungsten nitride including silicon; a dielectric disposed on the first electrode; and a second electrode formed on the dielectric.
Claim 20
Dependent Claim
13 words
The capacitor of claim 15 , wherein the capacitor is a non-planar capacitor.
Claim 21
Dependent Claim
12 words
The capacitor of claim 15 , wherein the dielectric includes tantalum oxide.
Claim 22
Dependent Claim
19 words
The capacitor of claim 15 , wherein the layer of tungsten nitride is conformally deposited by chemical vapor deposition.
Claim 23
Dependent Claim
48 words
The capacitor of claim 15 , wherein the layer of tungsten nitride is exposed to silicon based materials, and wherein a boundary between the layer of tungsten nitride and the silicon based materials is characterized by a reduced encroachment of the tungsten nitride into the silicon based materials.
Claim 24
Dependent Claim
17 words
The capacitor of claim 15 , wherein the second electrode is formed as a polycrystalline silicon layer.
Claim 25
Dependent Claim
34 words
A non-planar capacitor, comprising: a polycrystalline silicon film; a dielectric layer disposed on the polycrystalline film; and a film of tungsten nitride disposed on the dielectric layer, the film of tungsten nitride including silicon.
Claim 26
Dependent Claim
34 words
A non-planar capacitor, comprising: a polycrystalline silicon film; a dielectric layer disposed on the polycrystalline film; and a film of tungsten nitride disposed on the dielectric layer, the film of tungsten nitride including silicon.
Claim 27
Dependent Claim
27 words
The non-planar capacitor of claim 21 , wherein the polycrystalline silicon film is a conformal film formed over a substrate and over transistor devices on the substrate.
Claim 28
Dependent Claim
14 words
The non-planar capacitor of claim 21 , wherein the dielectric layer includes tantalum oxide.
Claim 29
Dependent Claim
20 words
The non-planar capacitor of claim 21 , wherein the film of tungsten nitride is conformally deposited by chemical vapor deposition.
Claim 30
Dependent Claim
53 words
A non-planar capacitor, comprising: a conformal polycrystalline silicon film formed over a substrate and over transistor devices on the substrate; a dielectric layer formed on the conformal polycrystalline silicon film; and a film of tungsten nitride conformally deposited on the dielectric layer by chemical vapor deposition, the film of tungsten nitride including silicon.
Claim 31
Dependent Claim
53 words
A non-planar capacitor, comprising: a conformal polycrystalline silicon film formed over a substrate and over transistor devices on the substrate; a dielectric layer formed on the conformal polycrystalline silicon film; and a film of tungsten nitride conformally deposited on the dielectric layer by chemical vapor deposition, the film of tungsten nitride including silicon.
Claim 32
Dependent Claim
48 words
The non-planar capacitor of claim 25 , wherein the film of tungsten nitride is formed by a chemical vapor deposition process that uses ammonia as a source of nitrogen and a gas selected from the group consisting of tungsten hexaflouride and tungsten carbonyl as a source of tungsten.
Claim 33
Dependent Claim
65 words
The non-planar capacitor of claim 25 , wherein the film of tungsten nitride is formed by a chemical vapor deposition process that uses a source gas mixture that includes: ammonia; a gas selected from the group consisting of tungsten hexaflouride and tungsten carbonyl; and a gas selected from the group consisting of silane, organic silane, and a compound that is a multiple order of silane.
Claim 34
Dependent Claim
14 words
The non-planar capacitor of claim 25 , wherein the dielectric layer includes tantalum oxide.
Claim 35
Dependent Claim
71 words
A non-planar capacitor, comprising: a first electrode; a dielectric layer formed on the first electrode; and a film of tungsten nitride conformally deposited on the dielectric layer by chemical vapor deposition that uses gases, including: ammonia; a gas selected from the group consisting of tungsten hexaflouride and tungsten carbonyl; and a gas selected from the group consisting of silane, organic silane, and a compound that is a multiple order of silane.
Claim 36
Dependent Claim
71 words
A non-planar capacitor, comprising: a first electrode; a dielectric layer formed on the first electrode; and a film of tungsten nitride conformally deposited on the dielectric layer by chemical vapor deposition that uses gases, including: ammonia; a gas selected from the group consisting of tungsten hexaflouride and tungsten carbonyl; and a gas selected from the group consisting of silane, organic silane, and a compound that is a multiple order of silane.
Claim 37
Dependent Claim
28 words
The non-planar capacitor of claim 29 , wherein the first electrode includes a conformal polycrystalline silicon film formed over a substrate and over transistor devices on the substrate.
Claim 38
Dependent Claim
22 words
The non-planar capacitor of claim 29 , wherein the gases used in the chemical vapor deposition process are a source gas mixture.
Claim 39
Dependent Claim
70 words
An integrated circuit, comprising: a substrate; at least one transistor device formed on the substrate and arranged to leave a contact area with the substrate; a non-planar capacitor, including: a first electrode; a second electrode; and a dielectric disposed between the first and the second electrode, wherein at least one of the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 40
Dependent Claim
70 words
An integrated circuit, comprising: a substrate; at least one transistor device formed on the substrate and arranged to leave a contact area with the substrate; a non-planar capacitor, including: a first electrode; a second electrode; and a dielectric disposed between the first and the second electrode, wherein at least one of the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 41
Dependent Claim
28 words
The integrated circuit of claim 32 , wherein both the first electrode and the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 42
Dependent Claim
23 words
The integrated circuit of claim 32 , wherein the first electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 43
Dependent Claim
23 words
The integrated circuit of claim 32 , wherein the second electrode includes a tungsten nitride layer, and the tungsten nitride layer includes silicon.
Claim 44
Dependent Claim
13 words
The integrated circuit of claim 32 , wherein the dielectric includes tantalum oxide.
Claim 45
Dependent Claim
16 words
The integrated circuit of claim 32 , wherein the tungsten nitride prevents degradation of the dielectric.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-05-04 | 2007-11-03 | 2008-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-05-04 | 2011-11-03 | 2012-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-05-04 | 2015-11-03 | 2016-05-04 | $7700.00 | Window Closed / Lapsed |