Patent US6709978B2 successfully refreshed from Google Patents.
US6709978B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming integrated circuits using high aspect ratio vias through a semiconductor wafer
Assignee: Micron Technology Inc
•
Filing: 2001-03-06
•
Granted: 2004-03-23
•
Expires: 2021-03-06
Abstract
Abstract An integrated circuit and method for forming the same. The integrated circuit includes a semiconductor wafer with first and second surfaces. A functional circuit is formed on the first surface of the semiconductor wafer. Further, a metallization layer is formed outwardly from the first surface of the semiconductor wafer. The integrated circuit also includes at least one high aspect ratio via that extends through the layer of semiconductor material. This via provides a connection between a lead and the functional circuit.
Inventors
- 👤 Joseph E. Geusic
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:45
CPC Classifications
H; H10; H10W; H10W72/00
Claims Analysis
Total Claims: 70
Claim 1
Independent Claim
161 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming at least one etch pit at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form at least one high aspect ratio hole through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; filling the at least one high aspect ratio hole with polycrystalline semiconductor material; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polycrystalline semiconductor material to form conductors in the at least one high aspect ratio hole; and forming at least one contact pad on the second surface of the semiconductor wafer so as to provide a contact for the conductors in the at least one high aspect ratio hole.
Claim 2
Independent Claim
161 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming at least one etch pit at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form at least one high aspect ratio hole through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; filling the at least one high aspect ratio hole with polycrystalline semiconductor material; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polycrystalline semiconductor material to form conductors in the at least one high aspect ratio hole; and forming at least one contact pad on the second surface of the semiconductor wafer so as to provide a contact for the conductors in the at least one high aspect ratio hole.
Claim 3
Dependent Claim
23 words
The method of claim 1 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 4
Dependent Claim
20 words
The method of claim 1 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 5
Dependent Claim
35 words
The method of claim 1 , wherein forming at least one etch pit at selected locations in the first surface of the semiconductor wafer includes forming the at least one etch pit by alkaline etching.
Claim 6
Dependent Claim
41 words
The method of claim 1 , and further comprising forming an insulator layer on an inner surface of the at least one high aspect ratio hole prior to filling the at least one high aspect ratio hole with polycrystalline semiconductor material.
Claim 7
Dependent Claim
39 words
The method of claim 1 , wherein depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer comprises depositing a film of aluminum on the first and second surfaces of the semiconductor wafer.
Claim 8
Dependent Claim
27 words
The method of claim 1 , wherein annealing the semiconductor wafer comprises annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius in Nitrogen ambient.
Claim 9
Dependent Claim
40 words
The method of claim 1 , and further comprising removing polycrystalline semiconductor material displaced from the at least one high aspect ratio hole and any residual conductive material on the surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 10
Independent Claim
172 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a number of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for the conductors in the high aspect ratio holes.
Claim 11
Independent Claim
172 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a number of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for the conductors in the high aspect ratio holes.
Claim 12
Dependent Claim
35 words
The method of claim 9 wherein forming an insulating layer on an inner surface of the at least one high aspect ratio hole comprises oxidation of the inner surface to less than about 1 micron.
Claim 13
Dependent Claim
30 words
The method of claim 1 wherein performing an anodic etch of the semiconductor wafer includes performing the anodic etch using a bath of about 6% aqueous solution of hydrofluoric acid.
Claim 14
Dependent Claim
28 words
The method of claim 1 wherein depositing a layer of conductive material further comprises depositing a thin layer of titanium on top of the layers of conductive material.
Claim 15
Dependent Claim
17 words
The method of claim 9 further comprising removing displaced polysilicon and any residual aluminum by chemical/mechanical polishing.
Claim 16
Independent Claim
169 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming at least one etch pit at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form at least one high aspect ratio hole through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; filling the at least one high aspect ratio hole with polycrystalline semiconductor material; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polycrystalline semiconductor material to form conductors in the at least one high aspect ratio hole; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the at least one high aspect ratio hole.
Claim 17
Independent Claim
169 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming at least one etch pit at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form at least one high aspect ratio hole through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; filling the at least one high aspect ratio hole with polycrystalline semiconductor material; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polycrystalline semiconductor material to form conductors in the at least one high aspect ratio hole; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the at least one high aspect ratio hole.
Claim 18
Dependent Claim
23 words
The method of claim 14 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 19
Dependent Claim
20 words
The method of claim 14 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 20
Dependent Claim
35 words
The method of claim 14 , wherein forming at least one etch pit at selected locations in the first surface of the semiconductor wafer includes forming the at least one etch pit by alkaline etching.
Claim 21
Dependent Claim
41 words
The method of claim 14 , and further comprising forming an insulating layer on an inner surface of the at least one high aspect ratio hole prior to filling the at least one high aspect ratio hole with polycrystalline semiconductor material.
Claim 22
Dependent Claim
35 words
The method of claim 18 wherein forming an insulating layer on an inner surface of the at least one high aspect ratio hole comprises oxidation of the inner surface to less than about 1 micron.
Claim 23
Dependent Claim
43 words
The method of claim 14 , wherein depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer comprises depositing a film of aluminum on at least one of the first and second surfaces of the semiconductor wafer.
Claim 24
Dependent Claim
41 words
The method of claim 14 , wherein depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer comprises depositing a film of aluminum on both of the first and second surfaces of the semiconductor wafer.
Claim 25
Dependent Claim
27 words
The method of claim 14 , wherein annealing the semiconductor wafer comprises annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius in Nitrogen ambient.
Claim 26
Dependent Claim
40 words
The method of claim 14 , and further comprising removing polycrystalline semiconductor material displaced from the at least one high aspect ratio hole and any residual conductive material on the surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 27
Dependent Claim
17 words
The method of claim 23 wherein removing polycrystalline semiconductor material and residual conductive material comprises chemical/mechanical polishing.
Claim 28
Dependent Claim
27 words
The method of claim 14 wherein depositing a layer of conductive material includes depositing a thin layer of titanium on top of the layers of conductive material.
Claim 29
Independent Claim
174 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a plurality of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of conductive material on at least one of the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for at least one of the conductors in the high aspect ratio holes.
Claim 30
Independent Claim
174 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a plurality of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of conductive material on at least one of the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for at least one of the conductors in the high aspect ratio holes.
Claim 31
Dependent Claim
23 words
The method of claim 26 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 32
Dependent Claim
20 words
The method of claim 26 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 33
Dependent Claim
43 words
The method of claim 26 , wherein forming an insulating layer on an inner surfaces of the high aspect ratio holes prior to filling the high aspect ratio holes with polysilicon comprises oxidation of the inner surfaces to less than about 1 micron.
Claim 34
Dependent Claim
48 words
The method of claim 26 , wherein sputter depositing a layer of conductive material on at least one of the first and second surfaces of the semiconductor wafer comprises depositing a film of aluminum on at least one of the first and second surfaces of the semiconductor wafer.
Claim 35
Dependent Claim
42 words
The method of claim 26 , wherein sputter depositing a layer of conductive material on at least one of the first and second surfaces comprises depositing a film of aluminum on both of the first and second surfaces of the semiconductor wafer.
Claim 36
Dependent Claim
27 words
The method of claim 26 , wherein annealing the semiconductor wafer comprises annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius in Nitrogen ambient.
Claim 37
Dependent Claim
42 words
The method of claim 26 , further comprising removing polysilicon displaced from the high aspect ratio holes and any residual conductive material on at least one of the first and the second surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 38
Dependent Claim
15 words
The method of claim 33 wherein removing polysilicon and residual conductive material comprises chemical/mechanical polishing.
Claim 39
Dependent Claim
35 words
The method of claim 26 wherein sputter depositing a layer of conductive material comprises depositing a layer of aluminum and further comprises depositing a thin layer of titanium on top of the layer of aluminum.
Claim 40
Independent Claim
181 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a number of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the high aspect ratio holes.
Claim 41
Independent Claim
181 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming a number of etch pits in the first surface of the semiconductor wafer at selected locations in the functional circuit; performing an anodic etch of the semiconductor wafer such that high aspect ratio holes are formed at locations of said etch pits through the semiconductor wafer from the first surface to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; sputter depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the high aspect ratio holes.
Claim 42
Dependent Claim
23 words
The method of claim 36 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 43
Dependent Claim
20 words
The method of claim 36 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 44
Dependent Claim
31 words
The method of claim 36 wherein forming an insulating layer on inner surfaces of the high aspect ratio holes comprises oxidation of the inner surfaces to less than about 1 micron.
Claim 45
Dependent Claim
25 words
The method of claim 36 , wherein annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius is performed in a Nitrogen ambient.
Claim 46
Dependent Claim
34 words
The method of claim 36 , and further comprising removing polysilicon displaced from the high aspect ratio holes and any residual aluminum on the surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 47
Dependent Claim
14 words
The method of claim 41 wherein removing polysilicon and residual aluminum comprises chemical/mechanical polishing.
Claim 48
Dependent Claim
28 words
The method of claim 36 , wherein sputter depositing a layer of aluminum further comprises depositing a thin layer of titanium on top of the layers of aluminum.
Claim 49
Independent Claim
161 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming etch pits at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form high aspect ratio holes through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the high aspect ratio holes.
Claim 50
Independent Claim
161 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming etch pits at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form high aspect ratio holes through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the aluminum replaces the polysilicon to form conductors in the high aspect ratio holes; and forming at least one metallization layer on one of the first or the second surfaces of the semiconductor wafer in contact with an end of at least one of the conductors in the high aspect ratio holes.
Claim 51
Dependent Claim
23 words
The method of claim 44 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 52
Dependent Claim
20 words
The method of claim 44 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 53
Dependent Claim
28 words
The method of claim 44 , wherein forming etch pits at selected locations in the first surface of the semiconductor wafer includes forming etch pits by alkaline etching.
Claim 54
Dependent Claim
32 words
The method of claim 44 , wherein forming an insulating layer on inner surfaces of the high aspect ratio holes comprises oxidation of the inner surfaces to less than about 1 micron.
Claim 55
Dependent Claim
33 words
The method of claim 44 wherein depositing a layer of aluminum on the first and second surfaces of the semiconductor wafer further comprises depositing a film of titanium on both layers of aluminum.
Claim 56
Dependent Claim
27 words
The method of claim 44 , wherein annealing the semiconductor wafer comprises annealing the semiconductor wafer at a temperature of approximately 500 degrees Celsius in Nitrogen ambient.
Claim 57
Dependent Claim
36 words
The method of claim 44 , further comprising removing polysilicon displaced from the at least one high aspect ratio hole and any residual aluminum on the surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 58
Dependent Claim
16 words
The method of claim 51 , wherein removing displaced polysilicon and residual aluminum comprises chemical/mechanical polishing.
Claim 59
Dependent Claim
23 words
The method of claim 44 wherein the method further includes depositing a thin layer of titanium on top of the layers of aluminum.
Claim 60
Independent Claim
154 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming etch pits at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form high aspect ratio holes through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for the conductors in the high aspect ratio holes.
Claim 61
Independent Claim
154 words
A method for forming an integrated circuit, the method comprising: forming a functional circuit in a first surface of a semiconductor wafer; forming etch pits at selected locations in the first surface of the semiconductor wafer; performing an anodic etch of the semiconductor wafer to form high aspect ratio holes through the semiconductor wafer from the first surface at the selected locations to a second, opposite surface; forming an insulating layer on inner surfaces of the high aspect ratio holes; filling the high aspect ratio holes with polysilicon; depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer; annealing the semiconductor wafer such that the conductive material replaces the polysilicon to form conductors in the high aspect ratio holes; and forming a number of contact pads on the second surface of the semiconductor wafer so as to provide contacts for the conductors in the high aspect ratio holes.
Claim 62
Dependent Claim
23 words
The method of claim 54 , wherein forming a functional circuit comprises forming a circuit that includes both digital and analog integrated circuits.
Claim 63
Dependent Claim
20 words
The method of claim 54 , wherein forming a functional circuit comprises forming a circuit that includes active circuit components.
Claim 64
Dependent Claim
28 words
The method of claim 54 , wherein forming etch pits at selected locations in the first surface of the semiconductor wafer includes forming etch pits by alkaline etching.
Claim 65
Dependent Claim
32 words
The method of claim 54 , wherein forming an insulator layer on inner surfaces of the high aspect ratio holes comprises oxidation of the inner surfaces to less than about 1 micron.
Claim 66
Dependent Claim
40 words
The method of claim 54 wherein depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer comprises depositing a film of aluminum on both of the first and second surfaces of the semiconductor wafer.
Claim 67
Dependent Claim
20 words
The method of claim 54 , further comprising depositing a film of titanium on the layers of the conductive material.
Claim 68
Dependent Claim
35 words
The method of claim 54 , and further comprising removing polysilicon displaced from the high aspect ratio holes and any residual conductive material on the surface of the semiconductor wafer after annealing the semiconductor wafer.
Claim 69
Dependent Claim
15 words
The method of claim 61 wherein removing polysilicon and residual conductive material comprises chemical/mechanical polishing.
Claim 70
Dependent Claim
40 words
The method of claim 54 wherein depositing a layer of conductive material on the first and second surfaces of the semiconductor wafer includes depositing layers of aluminum with a thin layer of titanium on top of the layers of aluminum.
References Cited (Backward Citations)
US3968564A
Cited
JPS565567A
Cited
US4734384A
Cited
US4744623A
Cited
US4920070A
Cited
US4970578A
Cited
JPH0313907A
Cited
WO1991011833A1
Cited
JPH04263462A
Cited
US5312765A
Cited
US5221633A
Cited
US5362976A
Cited
US5128831A
Cited
JPH05145060A
Cited
US5489554A
Cited
US5858877A
Cited
WO1994005039A1
Cited
US5352998A
Cited
US5409563A
Cited
US5798297A
Cited
US5767001A
Cited
US5416872A
Cited
US5656548A
Cited
US5604835A
Cited
US5902118A
Cited
US5532506A
Cited
US5587119A
Cited
US5796714A
Cited
US5742100A
Cited
US5618752A
Cited
US5682062A
Cited
US5641545A
Cited
US5739067A
Cited
US5729038A
Cited
US5834849A
Cited
US5903045A
Cited
US5844289A
Cited
US5858814A
Cited
US5963088A
Cited
US5760478A
Cited
US5901050A
Cited
US5900674A
Cited
US5897333A
Cited
US5915167A
Cited
US6181864B1
Cited
US6143616A
Cited
US6187677B1
Cited
US5952665A
Cited
US6198168B1
Cited
US6150188A
Cited
US6090636A
Cited
US6281042B1
Cited
US6122187A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-03-23 | 2007-09-22 | 2008-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-03-23 | 2011-09-22 | 2012-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-03-23 | 2015-09-22 | 2016-03-23 | $7700.00 | Window Closed / Lapsed |