Patent US3808933A successfully refreshed from Google Patents.
US6583048B2
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Organosilicon precursors for interlayer dielectric films with low dielectric constants
Assignee: Versum Materials US LLC
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Filing: 2001-08-31
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Granted: 2003-06-24
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Expires: 2021-08-31
Abstract
Abstract A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
Inventors
- 👤 Jean Louise Vincent
- 👤 Mark Leonard O'Neill
- 👤 Howard Paul Withers, Jr.
- 👤 Scott Edward Beck
- 👤 Raymond Nicholas Vrtis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:40
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
337 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether, represented by one or more of structures I through III, or a silyl ether oligomer, represented by structure IV: (R 2 O) x SiR 1 (4−x) (I) (R 3 O) y SiHR 1 (3−y) (II) R 1 3 Si—O—R 4 —O—SiR 1 3 (III) R 1 -((R 3 O)-Si-(R 1 )) z -R 1 (IV) wherein x is an integer from 1 to 3; y is 1 or 2; z is an integer from 2 to 6; R 1 is one or more of H, fluorine, a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic; R 2 is one or more of a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 straight or branched chain alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic, R 3 is one or more of R 2 , a C1 to 6 linear or branched alkyl, or a C3 to C8 substituted or unsubstituted cycloalkyl; and R 4 is one or more of a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated branched or straight chain C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic; optionally together with one or more additional reactive substance; to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
Claim 2
Independent Claim
337 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether, represented by one or more of structures I through III, or a silyl ether oligomer, represented by structure IV: (R 2 O) x SiR 1 (4−x) (I) (R 3 O) y SiHR 1 (3−y) (II) R 1 3 Si—O—R 4 —O—SiR 1 3 (III) R 1 -((R 3 O)-Si-(R 1 )) z -R 1 (IV) wherein x is an integer from 1 to 3; y is 1 or 2; z is an integer from 2 to 6; R 1 is one or more of H, fluorine, a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic; R 2 is one or more of a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 straight or branched chain alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic, R 3 is one or more of R 2 , a C1 to 6 linear or branched alkyl, or a C3 to C8 substituted or unsubstituted cycloalkyl; and R 4 is one or more of a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated branched or straight chain C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic; optionally together with one or more additional reactive substance; to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
Claim 3
Independent Claim
113 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more organosilicon compound containing one or more reactive side group selected from the group consisting of a C2 to C10 epoxide, a C2 to C8 carboxylate, a C2 to C8 alkyne, a C4 to C8 diene, a C3 to C5 strained cyclic group, and a C4 to C10 group that can sterically hinder or strain the organosilicon precursor; optionally together with one or more additional reactive substance; to form an interlayer dielectric film having a dielectric constant of 3.5 or less.
Claim 4
Independent Claim
113 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more organosilicon compound containing one or more reactive side group selected from the group consisting of a C2 to C10 epoxide, a C2 to C8 carboxylate, a C2 to C8 alkyne, a C4 to C8 diene, a C3 to C5 strained cyclic group, and a C4 to C10 group that can sterically hinder or strain the organosilicon precursor; optionally together with one or more additional reactive substance; to form an interlayer dielectric film having a dielectric constant of 3.5 or less.
Claim 5
Dependent Claim
34 words
The method of claim 1 where the organosilicon compound is selected from the group consisting of phenoxytrimethylsilane, 2-tert-butyl-phenoxytrimethylsilane, dimethylethoxysilane, dimethoxymethylsilane, 1,2-bis(trimethylsiloxy)ethane, 1,4-bis(trimethylsiloxy)benzene, 1,2-bis(trimethylsiloxy)cyclobutene, 1,2-dimethoxytetramethyldisilane, pentafluorophenoxytrimethylsilane, 1,1,1-trifluoroethoxytrimethylsilane, 1,1,1-trifuoroethoxydimethylsilane, dimethyoxymethylfluorosilane, 1,2-bis(trimethylsiloxy)tetrafluoroethane, 1,4-(trifluorosiloxy)tetrafluorobenzene, 1,2-difluoro-1,2-dimethoxydimethyldisilane, and mixtures thereof.
Claim 6
Dependent Claim
31 words
The method of claim 2 wherein the organosilicon precursor is selected from the group consisting of 3-glycidoxypropyltrimethyoxysilane, trimethylsilylacetylene, bis(trimethylsilyl)acetylene, trimethylsiloxyacetylene, 1-(trimethylsiloxy)-1,3-butadiene, 2-(trimethylsilyl)-1,3-butadiene, trimethylsilylcyclopentadiene, 4-(tert-butylphenyl)silane, 1,2-(dimethylsilyl)benzene, trimethylsilylacetate, di-tert-butoxydiacetoxy silane, and mixtures thereof.
Claim 7
Dependent Claim
41 words
The method of claim 1 wherein the interlayer dielectric film is represented by the formula, Si a O b C c H d F e , wherein, on an atomic % basis, a=10-35%, b=1-66%, c=1-35%, d=0-60%, and e=0-25%, such that a+b+c+d+e=100%.
Claim 8
Dependent Claim
18 words
The method of claim 1 wherein the chemical vapor deposition conditions are plasma enhanced chemical vapor deposition conditions.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein the chemical vapor deposition conditions are thermal chemical vapor deposition conditions.
Claim 10
Dependent Claim
12 words
The method of claim 1 wherein the substrate is a silicon wafer.
Claim 11
Dependent Claim
29 words
The method of claim 1 wherein the interlayer dielectric film has one or more of the bond types selected from Si—O—C, Si—O—Si, Si—C, Si—F, Si—H, C—O, C—H, and C—F.
Claim 12
Dependent Claim
13 words
The method of claim 1 wherein the dielectric constant is 3 or less.
Claim 13
Dependent Claim
12 words
The method of claim 1 wherein the interlayer dielectric film is porous.
Claim 14
Dependent Claim
40 words
The method of claim 1 wherein the chemical vapor deposition conditions include the use of an oxidant selected from the group consisting of O 2 , O 3 , H 2 O 2 , N 2 O, and mixtures thereof.
Claim 15
Dependent Claim
17 words
The method of claim 1 wherein the chemical vapor deposition conditions exclude the use of an oxidant.
Claim 16
Dependent Claim
32 words
The method of claim 1 wherein the chemical vapor deposition conditions include the use of one or more inert gases selected from the group consisting of helium, neon, argon, krypton, xenon, nitrogen.
Claim 17
Dependent Claim
36 words
The method of claim 1 wherein the one or more reactive substances is selected from the group consisting of a gaseous or liquid organic substance, ammonia, hydrogen, carbon dioxide, carbon monoxide, a fluorocarbon, and mixtures thereof.
Claim 18
Dependent Claim
64 words
The method of claim 15 wherein the gaseous or liquid organic substance is selected from the group consisting of methane, ethane, ethene, ethyne, propane, propene, butene, benzene, naphthalene, toluene, styrene, and mixtures thereof, and the fluorocarbon is selected from the group consisting of CF 4 , C 2 F 6 , C 4 F 6 , C 6 F 6 , and mixtures thereof.
Claim 19
Dependent Claim
46 words
The method of claim 1 wherein the film is deposited on the substrate as an insulation layer, an interlayer dielectric layer, an intermetal dielectric layer, a capping layer, a chemical-mechanical planarization or etch stop layer, a barrier layer, or an adhesion layer in an integrated circuit.
Claim 20
Dependent Claim
41 words
The method of claim 2 wherein the interlayer dielectric film is represented by the formula, Si a O b C c H d F e , wherein, on an atomic % basis, a=10-35%, b=1-66%, c=1-35%, d=0-60%, and e=0-25%, such that a+b+c+d+e=100%.
Claim 21
Dependent Claim
18 words
The method of claim 2 wherein the chemical vapor deposition conditions are plasma enhanced chemical vapor deposition conditions.
Claim 22
Dependent Claim
17 words
The method of claim 2 wherein the chemical vapor deposition conditions are thermal chemical vapor deposition conditions.
Claim 23
Dependent Claim
12 words
The method of claim 2 wherein the substrate is a silicon wafer.
Claim 24
Dependent Claim
29 words
The method of claim 2 wherein the interlayer dielectric film has one or more of the bond types selected from Si—O—C, Si—O—Si, Si—C, Si—F, Si—H, C—O, C—H, and C—F.
Claim 25
Dependent Claim
13 words
The method of claim 2 wherein the dielectric constant is 3 or less.
Claim 26
Dependent Claim
12 words
The method of claim 2 wherein the interlayer dielectric film is porous.
Claim 27
Dependent Claim
40 words
The method of claim 2 wherein the chemical vapor deposition conditions include the use of an oxidant selected from the group consisting of O 2 , O 3 , H 2 O 2 , N 2 O, and mixtures thereof.
Claim 28
Dependent Claim
17 words
The method of claim 2 wherein the chemical vapor deposition conditions exclude the use of an oxidant.
Claim 29
Dependent Claim
32 words
The method of claim 2 wherein the chemical vapor deposition conditions include the use of one or more inert gases selected from the group consisting of helium, neon, argon, krypton, xenon, nitrogen.
Claim 30
Dependent Claim
35 words
The method of claim 2 wherein the one or more reactive substances selected from the group consisting of a gaseous or liquid organic substance, ammonia, hydrogen, carbon dioxide, carbon monoxide, a fluorocarbon, and mixtures thereof.
Claim 31
Dependent Claim
64 words
The method of claim 28 wherein the gaseous or liquid organic substance is selected from the group consisting of methane, ethane, ethene, ethyne, propane, propene, butene, benzene, naphthalene, toluene, styrene, and mixtures thereof, and the fluorocarbon is selected from the group consisting of CF 4 , C 2 F 6 , C 4 F 6 , C 6 F 6 , and mixtures thereof.
Claim 32
Dependent Claim
45 words
The method claim 2 wherein the film is deposited on the substrate as an insulation layer, an interlayer dielectric layer, an intermetal dielectric layer, a capping layer, a chemical-mechanical planarization or etch stop layer, a barrier layer, or an adhesion layer in an integrated circuit.
Claim 33
Dependent Claim
30 words
The method of claim 1 wherein the chemical vapor deposition conditions are plasma enhanced chemical vapor deposition conditions and the one or more silyl ether is represented by structure II.
Claim 34
Dependent Claim
10 words
A film formed by the method of claim 1 .
Claim 35
Dependent Claim
10 words
A film formed by the method of claim 2 .
Claim 36
Dependent Claim
10 words
A film formed by the method of claim 31 .
Claim 37
Dependent Claim
11 words
The film of claim 32 , wherein said film is porous.
Claim 38
Dependent Claim
29 words
The film of claim 35 having a pore size of 5 nm or less equivalent spherical diameter, as determined by small angle neutron scattering or positron annihilation lifetime spectroscopy.
Claim 39
Dependent Claim
29 words
The film of claim 35 having a pore size of 2.5 nm or less equivalent spherical diameter, as determined by small angle neutron scattering or positron annihilation lifetime spectroscopy.
Claim 40
Dependent Claim
16 words
The film of claim 32 wherein said film has a density of 2 g/cc or less.
Claim 41
Dependent Claim
16 words
The film of claim 32 wherein said film has a density of 1.5 g/cc or less.
Claim 42
Dependent Claim
32 words
The film of claim 32 wherein said film has a dielectric constant of 2.5 to 3.5 and a Young's modulus greater than 3 GPa and/or a nanoindentation hardness greater than 0.5 GPa.
Claim 43
Dependent Claim
11 words
The film of claim 33 , wherein said film is porous.
Claim 44
Dependent Claim
29 words
The film of claim 41 having a pore size of 5 nm or less equivalent spherical diameter, as determined by small angle neutron scattering or positron annihilation lifetime spectroscopy.
Claim 45
Dependent Claim
29 words
The film of claim 41 having a pore size of 2.5 nm or less equivalent spherical diameter, as determined by small angle neutron scattering or positron annihilation lifetime spectroscopy.
Claim 46
Dependent Claim
16 words
The film of claim 33 wherein said film has a density of 2 g/cc or less.
Claim 47
Dependent Claim
16 words
The film of claim 33 wherein said film has a density of 1.5 g/cc or less.
Claim 48
Dependent Claim
32 words
The film of claim 33 wherein said film has a dielectric constant of 2.5 to 3.5 and a Young's modulus greater than 3 GPa and/or a nanoindentation hardness greater than 0.5 GPa.
Claim 49
Independent Claim
67 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether selected train the group consisting of diethoxymethylsilane, dimethylethoxysilane, dimethoxymethylsilane, dimethylmethoxysilane, phenoxydimethylsilane, diphenoxymethylsilane, dimethoxyphenylsilane, diethoxycyclohexyrsilane, tert-butoxydimethylsilane, and di(tert-butoky)methylsilane; to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
Claim 50
Independent Claim
67 words
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether selected train the group consisting of diethoxymethylsilane, dimethylethoxysilane, dimethoxymethylsilane, dimethylmethoxysilane, phenoxydimethylsilane, diphenoxymethylsilane, dimethoxyphenylsilane, diethoxycyclohexyrsilane, tert-butoxydimethylsilane, and di(tert-butoky)methylsilane; to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
Claim 51
Dependent Claim
17 words
The method of claim 47 the chemical vapor deposition conditions are plasma enhanced chemical vapor deposition conditions.
Claim 52
Dependent Claim
39 words
The method of claim 48 wherein the plasma enhanced chemical vapor deposition conditions include the use of one or more gases selected from the group consisting of carbon dioxide, argon, helium, nitrogen, oxygen, nitrous oxide, hydrogen peroxide and ozone.
Claim 53
Dependent Claim
11 words
The method of claim 48 wherein the organosilicon precursor is diethoxymethylsilane.
Claim 54
Dependent Claim
21 words
The method of claim 50 wherein the plasma enhanced chemical vapor deposition conditions include the use of carbon dioxide or helium.
Claim 55
Independent Claim
51 words
A method of forming a low dielectric constant interlayer dielectric film which comprises reading diethoxymethylsilane, under plasma vapor deposition conditions sufficient to deposit a film on a substrate, in the presence of carbon dioxide or helium, to form an interlayer dielectric film having a dielectric constant of about 2.5 to 3.5.
Claim 56
Independent Claim
51 words
A method of forming a low dielectric constant interlayer dielectric film which comprises reading diethoxymethylsilane, under plasma vapor deposition conditions sufficient to deposit a film on a substrate, in the presence of carbon dioxide or helium, to form an interlayer dielectric film having a dielectric constant of about 2.5 to 3.5.
Claim 57
Dependent Claim
10 words
A film formed by the method of claim 47 .
Claim 58
Dependent Claim
10 words
A film formed by the method of claim 48 .
Claim 59
Dependent Claim
10 words
A film formed by the method of claim 50 .
Claim 60
Dependent Claim
10 words
A film formed by the method of claim 52 .
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