(fluoroalkoxy)(alkoxy) silane compound and its production and preparation of fluorine-contained silicon oxide film

Abstract

Abstract PROBLEM TO BE SOLVED: To provide a novel compd. for stably forming a fluorine-contained silicon oxide film as a low-dielectric constant interlayer insulating film of a semiconductor device by a CVD method. SOLUTION: The (fluoroalkoxy)(alkoxy) silane compd. is expressed by the formula: (R1 O)n Si(OR<2> )4-n [R<1> denotes 2 to 3C fluoroalkyl group having a straight chain or branch; R<2> denotes a methyl group or ethyl group; n=1 to 3]. Triethoxychlorosilane and 1, 1, 1, 3, 3,3-hexafluoroisopropanol of l.1equiv. are brought into reaction in the co-presence of ammonia and after by-produces are removed, the (hexafluoroisopropoxy) triethoxysilane is obtd. by distillation. A gaseous mixture composed of the compd./tetraethoxysilaned/ozone is sent onto a heated substrate and is deposited by cracking, by which the fluorine- contained silicon oxide film is obtained. The compd. has an adequate vapor pressure, is a stable liquid compd. having low corrosiveness and danger. Since the stable supply of this compd. is possible, the mass production of the fluorine- contained silicon oxide films by a CVD method is possible.

Inventors

• 👤 Yuko Hochido
• 👤 雄幸 寶地戸
• 👤 Hidekimi Kadokura
• 👤 秀公 門倉
• 👤 Masamichi Matsumoto
• 👤 政道 松本
• 👤 Hiroshi Matsumoto
• 👤 浩 松本
• 👤 Hidechika Yokoyama
• 👤 英親 横山

Bibliographic Details