US6440876B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
Assignee: Messer LLC
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Filing: 2001-10-05
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Granted: 2002-08-27
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Expires: 2021-10-05
Abstract
Abstract Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si-O-C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (-O-R1-O-)SiR2R3 or the formula (-R1-O-)SiR2R3.
Inventors
- 👤 Qing Min Wang
- 👤 Ce Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
42 words
A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface a Si—O—C-in-ring cyclic siloxane precursor wherein said precursor reacts with and deposits on said surface thereby forming said dielectric film.
Claim 2
Independent Claim
42 words
A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface a Si—O—C-in-ring cyclic siloxane precursor wherein said precursor reacts with and deposits on said surface thereby forming said dielectric film.
Claim 3
Dependent Claim
23 words
The method as claimed in claim 1 wherein said Si—O—C-in-ring cyclic siloxane compound is selected from the group consisting of 1,3-dioxa-2-silacyclohydrocarbons and 1-oxa-2-silacyclohydrocarbons.
Claim 4
Dependent Claim
64 words
The method as claimed in claim 2 wherein said 1,3-dioxa-2-silacyclohydrocarbons have the formula (—O—R 1 —O—)SiR 2 R 3 wherein R 1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, R 2 and R 3 are the same or different, and are selected from the group consisting of H, methyl, vinyl, or other hydrocarbons containing two or more carbon atoms.
Claim 5
Dependent Claim
12 words
The method as claimed in claim 3 wherein said 1,3-dioxa-2-silacyclohydrocarbon is 1,3-dioxa-2-sila-2,2-dimethyl-cyclopentane.
Claim 6
Dependent Claim
82 words
The method as claimed in claim 2 wherein said 1-oxa-2-silacyclohydrocarbons have the formula (—R 1 —O—)SiR 2 R 3 , where R 1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, one or more than one carbon atom in R 1 can be substituted by a silicon atom, R 2 and R 3 are the same or different, and are selected from the group consisting of H, methyl, vinyl, or other hydrocarbons containing two or more carbon atoms.
Claim 7
Dependent Claim
47 words
The method as claimed in claim 5 wherein in said formula R 1 is saturated or unsaturated hydrocarbon with from 1 to 7 carbon atoms, and one or more than one carbon atom in R 1 can be substituted by one or more than one silicon atom.
Claim 8
Dependent Claim
12 words
The method as claimed in claim 5 wherein said 1-oxa-2-silacyclohydrocarbon is 2,2-dimethyl-1-oxa-2-sila-oxacyclohexane.
Claim 9
Dependent Claim
17 words
The method as claimed in claim 1 wherein said dielectric film has a k value below 2.5.
Claim 10
Dependent Claim
24 words
The method as claimed in claim 8 wherein said dielectric film has a k value in the range of about 2.0 to about 2.5.
Claim 11
Dependent Claim
28 words
The method as claimed in claim 1 wherein said Si—O—C-in-ring cyclic siloxane precursor is deposited on the surface of the semiconductor or integrated circuit using chemical vapor deposition.
Claim 12
Dependent Claim
16 words
The method as claimed in claim 10 wherein said chemical vapor deposition is pyrolytic or plasma-assisted.
Claim 13
Dependent Claim
23 words
The method as claimed in claim 10 wherein said precursor is in either the vapor phase or the liquid phase prior to deposition.
Claim 14
Dependent Claim
21 words
The method as claimed in claim 10 wherein said precursor is a single precursor, thereby not requiring an additional oxidant compound.
Claim 15
Dependent Claim
17 words
The method as claimed in claim 1 further comprising applying said precursor with an additional oxidant compound.
Claim 16
Dependent Claim
29 words
The method as claimed in claim 1 wherein the ratio of opening and retention of the precursor ring structure on said surface can be adjusted during chemical vapor deposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-08-26 | 2006-02-25 | 2006-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-26 | 2010-02-25 | 2010-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-26 | 2014-02-25 | 2014-08-27 | $7700.00 | Window Closed / Lapsed |