US5324539A
Expired / Lapsed
US
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Method for forming CVD thin glass films
Assignee: Alcan Tech Co Inc
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Filing: 1992-04-14
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Granted: 1994-06-28
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Expires: 2012-04-14
Abstract
Abstract The present invention provides a method for forming a chemical vapor deposition film which is suitable for an interlevel insulator between Al and Al or an interlevel insulator between Al and a gate, and provides an improved chemical vapor deposition film suitable for mass production. An organic siloxane or alkoxysilane and an alkoxy compound of germanium are mixed in a vapor phase, and reacted with oxygen or ozone to thereby form a thin glass film composed of a two-component system of silicon oxide and germanium oxide on a substrate.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yuko Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C03; C03C; C03C17/00; C03C17/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
209 words
A method for forming a chemical vapor deposition thin glass film on a substrate comprising the steps of: mixing, in vapor phase, (1) an organic silane selected from the group consisting of chain siloxanes represented by the general formula: ##STR7## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 0 or greater, cyclic siloxanes represented by the general ##STR8## wherein R 9 , R 10 , R 11 and R 12 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 1 or greater and alkoxysilanes represented by the general formula: Si(OR).sub.4 wherein R represents an alkyl group having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and (2) an alkoxy compound of germanium represented by the general formula: Ge(OR).sub.4 wherein R is an alkyl group having 1-4 carbon atoms, to form a vapor phase admixture; and reacting said vapor phase admixture with ozone at atmospheric pressure, in the presence of the substrate, to form a thin glass film containing silicon oxide and germanium oxide on the substrate.
Claim 2
Independent Claim
209 words
A method for forming a chemical vapor deposition thin glass film on a substrate comprising the steps of: mixing, in vapor phase, (1) an organic silane selected from the group consisting of chain siloxanes represented by the general formula: ##STR7## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 0 or greater, cyclic siloxanes represented by the general ##STR8## wherein R 9 , R 10 , R 11 and R 12 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 1 or greater and alkoxysilanes represented by the general formula: Si(OR).sub.4 wherein R represents an alkyl group having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and (2) an alkoxy compound of germanium represented by the general formula: Ge(OR).sub.4 wherein R is an alkyl group having 1-4 carbon atoms, to form a vapor phase admixture; and reacting said vapor phase admixture with ozone at atmospheric pressure, in the presence of the substrate, to form a thin glass film containing silicon oxide and germanium oxide on the substrate.
Claim 3
Dependent Claim
51 words
A method in accordance with claim 1 further comprising the step of: adding a phosphorus compound to said vapor phase admixture, said phosphorus compound being selected from the group consisting of alkoxy phosphorus compounds, oxides of phosphorus and acid chlorides containing phosphorus, whereby said thin glass film additionally contains phosphorus oxide.
Claim 4
Dependent Claim
51 words
A method in accordance with claim 2 further comprising the step of: adding a boron compound to said vapor phase admixture, said boron compound being selected from the group consisting of alkoxy boron compounds, oxides of boron and acid chlorides of boron, whereby said thin glass film is a germanoborophosphosilicate glass.
Claim 5
Dependent Claim
51 words
A method in accordance with claim 1 further comprising the step of: adding a boron compound to said vapor phase admixture, said boron compound being selected from the group consisting of alkoxy boron compounds, oxides of boron and acid chlorides of boron, whereby said thin glass film additionally contains boron oxide.
Claim 6
Dependent Claim
28 words
A method in accordance with claim 2 wherein said phosphorus compound is PO(OR) 3 or P(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
Claim 7
Dependent Claim
25 words
A method in accordance with claim 3, wherein said boron compound is B(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
Claim 8
Dependent Claim
25 words
A method in accordance with claim 4, wherein said boron compound is B(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
Claim 9
Independent Claim
207 words
A method for forming a chemical vapor deposition thin glass film on a substrate comprising the steps of: mixing, in vapor phase, (1) an organic silane selected from the group consisting of chain siloxanes represented by the general formula: ##STR9## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 0 or greater, cyclic siloxanes represented by the general formula: ##STR10## wherein R 9 , R 10 , R 11 and R 12 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 1 or greater and alkoxysilanes represented by the general formula: Si(OR).sub.4 wherein R represents an alkyl group having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and (2) an alkoxy compound of germanium represented by the general formula: Ge(OR).sub.4 wherein R is an alkyl group having 1-4 carbon atoms, to form a vapor phase admixture; and reacting said vapor phase admixture with oxygen, in the presence of the substrate, to form a thin glass film containing silicon oxide and germanium oxide on the substrate.
Claim 10
Independent Claim
207 words
A method for forming a chemical vapor deposition thin glass film on a substrate comprising the steps of: mixing, in vapor phase, (1) an organic silane selected from the group consisting of chain siloxanes represented by the general formula: ##STR9## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 0 or greater, cyclic siloxanes represented by the general formula: ##STR10## wherein R 9 , R 10 , R 11 and R 12 are alkyl groups having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and n is 1 or greater and alkoxysilanes represented by the general formula: Si(OR).sub.4 wherein R represents an alkyl group having 1-4 carbon atoms or substituted alkyl having 1-4 carbon atoms and (2) an alkoxy compound of germanium represented by the general formula: Ge(OR).sub.4 wherein R is an alkyl group having 1-4 carbon atoms, to form a vapor phase admixture; and reacting said vapor phase admixture with oxygen, in the presence of the substrate, to form a thin glass film containing silicon oxide and germanium oxide on the substrate.
Claim 11
Dependent Claim
51 words
A method in accordance with claim 8 further comprising the step of: adding a phosphorus compound to said vapor phase admixture, said phosphorus compound being selected from the group consisting of alkoxy phosphorus compounds, oxides of phosphorus and acid chlorides containing phosphorus, whereby said thin glass film additionally contains phosphorus oxide.
Claim 12
Dependent Claim
51 words
A method in accordance with claim 9 further comprising the step of: adding a boron compound to said vapor phase admixture, said boron compound being selected from the group consisting of alkoxy boron compounds, oxides of boron and acid chlorides of boron, whereby said thin glass film is a germanoborophosphosilicate glass.
Claim 13
Dependent Claim
51 words
A method in accordance with claim 8 further comprising the step of: adding a boron compound to said vapor phase admixture, said boron compound being selected from the group consisting of alkoxy boron compounds, oxides of boron and acid chlorides of boron, whereby said thin glass film additionally contains boron oxide.
Claim 14
Dependent Claim
28 words
A method in accordance with claim 9 wherein said phosphorus compound is PO(OR) 3 or P(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
Claim 15
Dependent Claim
25 words
A method in accordance with claim 10, wherein said boron compound is B(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
Claim 16
Dependent Claim
25 words
A method in accordance with claim 11, wherein said boron compound is B(OR) 3 , wherein R is an alkyl group of 1-4 carbon atoms.
References Cited (Backward Citations)
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