US6147009A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hydrogenated oxidized silicon carbon material
Assignee: Semiconductor Manufacturing International Corp
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Filing: 1998-06-29
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Granted: 2000-11-14
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Expires: 2018-06-29
Abstract
Abstract A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.
Inventors
- 👤 Alfred Grill
- 👤 Christopher Vincent Jahnes
- 👤 Vishnubhai Vitthalbhai Patel
- 👤 Laurent Claude Perraud
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/65; H10P14/6516; H10P14/6548; H10W20/40; H10W20/45; H10W20/47; H10W20/48; H10W74/00; H10W74/40; H10W74/43; H10W74/47; H10W74/476; H10P14/6336; H10P14/6502; H10P14/6506; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/6903; H10P14/6905; H10P14/692; H10P14/6921; H10P14/6922; H10W20/495; Y; Y10; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
88 words
A method for fabricating a thermally stable low dielectric constant film comprising the steps of: providing a parallel plate plasma enhanced chemical vapor deposition (PECVD) chamber, positioning a substrate in said chamber, flowing a precursor gas containing Si, C, H, and optionally O into said PECVD chamber, said precursor gas further comprising organosilicon compounds having a ring structure, and depositing a non-polymeric hydrogenated silicon carbon or a non-polymeric hydrogenated oxidized silicon carbon film on said substrate, said film containing between about 5 and about 45 atomic percent carbon.
Claim 2
Independent Claim
88 words
A method for fabricating a thermally stable low dielectric constant film comprising the steps of: providing a parallel plate plasma enhanced chemical vapor deposition (PECVD) chamber, positioning a substrate in said chamber, flowing a precursor gas containing Si, C, H, and optionally O into said PECVD chamber, said precursor gas further comprising organosilicon compounds having a ring structure, and depositing a non-polymeric hydrogenated silicon carbon or a non-polymeric hydrogenated oxidized silicon carbon film on said substrate, said film containing between about 5 and about 45 atomic percent carbon.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein a plasma in said PECVD chamber is run in a continuous mode during said film deposition.
Claim 4
Dependent Claim
23 words
A method according to claim 1, wherein a plasma in said PECVD chamber is run in a pulsed mode during said film deposition.
Claim 5
Dependent Claim
28 words
A method according to claim 1 further comprising the step of selecting said organosilicon compound having a ring structure from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, tetraethylcyclotetrasiloxane, and decamethylcyclopentasiloxane.
Claim 6
Dependent Claim
12 words
A method according to claim 1, wherein said precursor gas is 1,3,5,7-tetra-methyl-cyclo-tetra-siloxane.
Claim 7
Dependent Claim
33 words
A method according to claim 1 further comprising the step of mixing said precursor with at least one member selected from the group consisting of hydrogen, oxygen, germanium, nitrogen and fluorine containing gases.
Claim 8
Dependent Claim
70 words
A method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film according to claim 1 further comprising the step of heat treating said film at a temperature not higher than 300° C. for a first time period and heat treating said film at a temperature not lower than 300° C. for a second time period, said second time period being longer than said first time period.
Claim 9
Independent Claim
113 words
A method for fabricating a thermally stable low dielectric constant film comprising the steps of: providing a plasma enhanced chemical vapor deposition (PECVD) chamber, positioning a substrate in said chamber, flowing a precursor gas containing Si, C, H and optionally O into said PECVD chamber, depositing a non-polymeric hydrogenated silicon carbon or a non-polymeric hydrogenated oxidized silicon carbon film on said substrate, and after depositing said film, heat treating said film at a temperature not higher than 300° C. for a first time period and heat treating said film at a temperature not lower than 300° C. for a second time period, said second time period being longer than said first time period.
Claim 10
Independent Claim
113 words
A method for fabricating a thermally stable low dielectric constant film comprising the steps of: providing a plasma enhanced chemical vapor deposition (PECVD) chamber, positioning a substrate in said chamber, flowing a precursor gas containing Si, C, H and optionally O into said PECVD chamber, depositing a non-polymeric hydrogenated silicon carbon or a non-polymeric hydrogenated oxidized silicon carbon film on said substrate, and after depositing said film, heat treating said film at a temperature not higher than 300° C. for a first time period and heat treating said film at a temperature not lower than 300° C. for a second time period, said second time period being longer than said first time period.
Claim 11
Dependent Claim
20 words
A method according to claim 8, wherein said plasma enhanced chemical vapor deposition chamber is a parallel plate plasma reactor.
Claim 12
Dependent Claim
23 words
A method according to claim 8, wherein a plasma in said PECVD chamber is run in a continuous mode during said film deposition.
Claim 13
Dependent Claim
23 words
A method according to claim 8, wherein a plasma in said PECVD chamber is run in a pulsed mode during said film deposition.
Claim 14
Dependent Claim
25 words
A method according to claim 8, wherein said precursor gas containing Si, C, H and optionally O, further comprises organosilicon compounds having a ring structure.
Claim 15
Dependent Claim
12 words
A method according to claim 12, wherein said precursor gas is 1,3,5,7-tetra-methyl-cyclo-tetra-siloxane.
Claim 16
Dependent Claim
20 words
A method according to claim 8 wherein said precursor gas comprises from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, tetraethylcyclotetrasiloxane, and decamethylcyclopentasiloxane.
Claim 17
Dependent Claim
33 words
A method according to claim 8 further comprising the step of mixing said precursor with at least one member selected from the group consisting of hydrogen, oxygen, germanium, nitrogen and fluorine containing gases.
References Cited (Backward Citations)
JPS60111480A
Cited
US4824690A
Cited
US5093153A
Cited
US5593741A
Cited
US5494712A
Cited
US5554570A
Cited
US5559637A
Cited
US5618619A
Cited
DE19654737A1
Cited
US5789320A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |