US6566259B1
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Integrated deposition process for copper metallization
Assignee: Applied Materials Inc
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Filing: 2000-11-09
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Granted: 2003-05-20
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Expires: 2020-11-09
Abstract
Abstract Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.
Inventors
- 👤 Peijun Ding
- 👤 Imran Hashim
- 👤 Barry Chin
- 👤 Bingxi Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/14; C23C14/16; C23C14/165; H10W20/033; H10W20/043; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
67 words
A process for forming an interconnect on a patterned substrate, comprising: depositing a barrier layer on the substrate in a first high density physical vapor deposition chamber; depositing a seed layer on the barrier layer in a second high density physical vapor deposition chamber; and depositing a first metal layer on the seed layer, wherein the seed layer and the first metal layer comprise the same material.
Claim 2
Dependent Claim
67 words
A process for forming an interconnect on a patterned substrate, comprising: depositing a barrier layer on the substrate in a first high density physical vapor deposition chamber; depositing a seed layer on the barrier layer in a second high density physical vapor deposition chamber; and depositing a first metal layer on the seed layer, wherein the seed layer and the first metal layer comprise the same material.
Claim 3
Dependent Claim
15 words
The process of claim 1 , wherein the first metal layer is deposited by electroplating.
Claim 4
Dependent Claim
28 words
The process of claim 2 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer and the first metal layer comprise copper.
Claim 5
Dependent Claim
32 words
The process of claim 1 , wherein the first metal layer is deposited in a physical vapor deposition reflow chamber at a substrate temperature between about 200° C. and about 450° C.
Claim 6
Dependent Claim
28 words
The process of claim 4 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer and the first metal layer comprise copper.
Claim 7
Dependent Claim
17 words
The process of claim 1 , wherein the first metal layer is deposited by chemical vapor deposition.
Claim 8
Dependent Claim
34 words
The process of claim 6 , further comprising depositing a second metal layer over the first metal layer at a substrate temperature between about 100° C. and about 450° C. by physical vapor deposition.
Claim 9
Dependent Claim
32 words
The process of claim 7 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer, the first metal layer, and the second metal layer comprise copper.
Claim 10
Dependent Claim
28 words
The process of claim 6 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer and the first metal layer comprise copper.
Claim 11
Dependent Claim
56 words
The process of claim 1 , wherein depositing the barrier layer comprises delivering a bias between about 0.5 kW and about 5 kW to a target, delivering RF power between about 0.5 kW and about 3 kW to a source coil, and delivering a bias between about 0 W and about 500 W to the substrate.
Claim 12
Dependent Claim
56 words
The process of claim 1 , wherein depositing the seed layer comprises delivering a bias between about 0.5 kW and about 5 kW to a target, delivering RF power between about 0.5 kW and about 3 kW to a source coil, and delivering a bias between about 0 W and about 500 W to the substrate.
Claim 13
Dependent Claim
20 words
The process of claim 1 , wherein the barrier layer and the seed layer are deposited in an integrated system.
Claim 14
Dependent Claim
147 words
A process for forming an interconnect on a patterned substrate, comprising: depositing a barrier layer on the substrate by delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate and establishing a pressure of about 45 mTorr or less in a first high density physical vapor deposition chamber; depositing a seed layer on the barrier layer by delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate and establishing a pressure of about 45 mTorr or less in a second high density physical vapor deposition chamber; and depositing a first metal layer on the seed layer, wherein the seed layer and the first metal layer comprise the same material.
Claim 15
Dependent Claim
147 words
A process for forming an interconnect on a patterned substrate, comprising: depositing a barrier layer on the substrate by delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate and establishing a pressure of about 45 mTorr or less in a first high density physical vapor deposition chamber; depositing a seed layer on the barrier layer by delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate and establishing a pressure of about 45 mTorr or less in a second high density physical vapor deposition chamber; and depositing a first metal layer on the seed layer, wherein the seed layer and the first metal layer comprise the same material.
Claim 16
Dependent Claim
15 words
The process of claim 13 , wherein the first metal layer is deposited by electroplating.
Claim 17
Dependent Claim
32 words
The process of claim 13 , wherein the first metal layer is deposited in a physical vapor deposition reflow chamber at a substrate temperature between about 200° C. and about 450° C.
Claim 18
Dependent Claim
17 words
The process of claim 13 , wherein the first metal layer is deposited by chemical vapor deposition.
Claim 19
Dependent Claim
34 words
The process of claim 16 , further comprising depositing a second metal layer on the first metal layer at a substrate temperature between about 100° C. and about 450° C. by physical vapor deposition.
Claim 20
Dependent Claim
32 words
The process of claim 17 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer, the first metal layer, and the second metal layer comprise copper.
Claim 21
Dependent Claim
28 words
The process of claim 13 , wherein the barrier layer comprises tantalum, tantalum nitride, or combinations thereof, and the seed layer and the first metal layer comprise copper.
Claim 22
Dependent Claim
28 words
The process of claim 13 , wherein depositing the barrier layer further comprises delivering RF power between about 0.5 kW and about 3 kW to a source coil.
Claim 23
Dependent Claim
28 words
The process of claim 13 , wherein depositing the seed layer further comprises delivering RF power between about 0.5 kW and about 3 kW to a source coil.
Claim 24
Dependent Claim
20 words
The process of claim 13 , wherein the barrier layer and the seed layer are deposited in an integrated system.
Claim 25
Dependent Claim
69 words
A process for forming an interconnect, comprising: depositing a barrier layer on the substrate, wherein the barrier layer is selected from the group of tantalum, tantalum nitride, and combinations thereof, in a first high density physical vapor deposition chamber; depositing a copper seed layer on the barrier layer in a second high density physical vapor deposition chamber; and depositing a copper layer on the copper seed layer by electroplating.
Claim 26
Dependent Claim
69 words
A process for forming an interconnect, comprising: depositing a barrier layer on the substrate, wherein the barrier layer is selected from the group of tantalum, tantalum nitride, and combinations thereof, in a first high density physical vapor deposition chamber; depositing a copper seed layer on the barrier layer in a second high density physical vapor deposition chamber; and depositing a copper layer on the copper seed layer by electroplating.
Claim 27
Dependent Claim
51 words
The process of claim 23 , wherein depositing the barrier layer comprises delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate disposed in the first high density physical vapor deposition chamber.
Claim 28
Dependent Claim
38 words
The process of claim 24 , wherein depositing the barrier layer further comprises delivering RF power between about 0.5 kW and about 3 kW to a source coil disposed in the first high density physical vapor deposition chamber.
Claim 29
Dependent Claim
52 words
The process of claim 23 , wherein depositing the copper seed layer comprises delivering a bias between about 0.5 kW and about 5 kW to a target and delivering a bias between about 0 W and about 500 W to the substrate disposed in the first high density physical vapor deposition chamber.
Claim 30
Dependent Claim
39 words
The process of claim 26 , wherein depositing the copper seed layer further comprises delivering RF power between about 0.5 kW and about 3 kW to a source coil disposed in the first high density physical vapor deposition chamber.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-05-19 | 2006-11-18 | 2007-05-20 | $2000.00 | Window Closed / Lapsed |
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