US5792522A
Expired / Lapsed
US
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High density plasma physical vapor deposition
Assignee: ASTEX Inc
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Filing: 1996-09-18
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Granted: 1998-08-11
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Expires: 2016-09-18
Abstract
Abstract A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.
Inventors
- 👤 Shu Jin
- 👤 Xiao Chun Mu
- 👤 Xing Chen
- 👤 Lawrence Bourget
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; C; C23; C23C; C23C14/00; C23C14/04; C23C14/046; C23C14/22; C23C14/34; C23C14/35; C23C14/354; C23C14/357; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32431; H01J37/3266; H01J37/32678; H01J37/34; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/3325
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
90 words
A method of depositing material in an opening formed in a substrate, comprising the steps of: a) providing a vacuum chamber having a target located therein; b) placing a substrate on a stage located within the vacuum chamber; c) flowing a gas into the vacuum chamber to ignite a high-density plasma by applying an electromagnetic field to the vacuum chamber; d) maintaining a pressure within the vacuum chamber at between 1 mTorr and 6 mTorr; and e) applying a voltage to said target of between -600 V and -1000 V.
Claim 2
Independent Claim
90 words
A method of depositing material in an opening formed in a substrate, comprising the steps of: a) providing a vacuum chamber having a target located therein; b) placing a substrate on a stage located within the vacuum chamber; c) flowing a gas into the vacuum chamber to ignite a high-density plasma by applying an electromagnetic field to the vacuum chamber; d) maintaining a pressure within the vacuum chamber at between 1 mTorr and 6 mTorr; and e) applying a voltage to said target of between -600 V and -1000 V.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein said substrate is at floating potential.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein said substrate is electrically grounded.
Claim 5
Independent Claim
81 words
A method of depositing material in an opening formed in a substrate, comprising the steps of: a) maintaining a pressure in a chamber of an electron cyclotron resonance-assisted high density plasma physical vapor deposition system at between 1 mTorr and 6 mTorr; b) generating a plasma by providing microwave power of between 3 kW and 5 kW; and c) applying a voltage to a target, being a source of deposition material, in the range of between -600 V and -1000 V.
Claim 6
Independent Claim
81 words
A method of depositing material in an opening formed in a substrate, comprising the steps of: a) maintaining a pressure in a chamber of an electron cyclotron resonance-assisted high density plasma physical vapor deposition system at between 1 mTorr and 6 mTorr; b) generating a plasma by providing microwave power of between 3 kW and 5 kW; and c) applying a voltage to a target, being a source of deposition material, in the range of between -600 V and -1000 V.
Claim 7
Dependent Claim
61 words
The method of claim 4, wherein said ECR system further includes a first electromagnet disposed above a second electromagnet, and wherein said method further includes the steps of: providing an electrical current of a predetermined amount to said first electromagnet; and providing an electrical current to said second electromagnet that is less than said predetermined amount provided to said first electromagnet.
Claim 8
Dependent Claim
12 words
The method of claim 4, wherein said substrate is connected to ground.
Claim 9
Dependent Claim
11 words
The method of claim 4, wherein a substrate potential is floating.
Claim 10
Dependent Claim
11 words
The method of claim 4, wherein said material is a conductor.
Claim 11
Dependent Claim
10 words
The method of claim 8, wherein said conductor is aluminum.
Claim 12
Dependent Claim
10 words
The method of claim 8, wherein said conductor is copper.
Claim 13
Dependent Claim
22 words
The method of claim 4, wherein said substrate temperature is within a range that is controlled to be less than 250° C.
Claim 14
Dependent Claim
35 words
The method of claim 4, wherein said opening has a depth to width ratio of at least 2:1, wherein the width is approximately 0.35 micron to 1.0 micron and the depth is approximately 1.2 microns.
Claim 15
Dependent Claim
24 words
The method of claim 4, wherein the material in an opening occurs is deposited to a thickness of between 950 Å and 3500 Å.
Claim 16
Independent Claim
90 words
A method of depositing material in a high-aspect ratio opening on a substrate using an electron cyclotron resonance-assisted high density plasma physical vapor deposition ("ECR") system having an annular window disposed above a target of the material, said method comprising the steps of: a) maintaining a pressure in a chamber of said ECR system of between 1 mTorr and 6 mTorr; b) providing microwave power of between 3 kW and 5 kW to said chamber; and c) applying a voltage to said target of between -600 V and -1000 V.
Claim 17
Independent Claim
90 words
A method of depositing material in a high-aspect ratio opening on a substrate using an electron cyclotron resonance-assisted high density plasma physical vapor deposition ("ECR") system having an annular window disposed above a target of the material, said method comprising the steps of: a) maintaining a pressure in a chamber of said ECR system of between 1 mTorr and 6 mTorr; b) providing microwave power of between 3 kW and 5 kW to said chamber; and c) applying a voltage to said target of between -600 V and -1000 V.
Claim 18
Dependent Claim
45 words
The method of claim 14, further comprising the steps of: a) providing an electrical current of a predetermined amount to a first electromagnet; and b) providing an electric current to said second electromagnet that is less than said predetermined amount provided to said first electromagnet.
Claim 19
Dependent Claim
11 words
The method as in claim 15, wherein said substrate is grounded.
Claim 20
Dependent Claim
12 words
The method as in claim 15, wherein said substrate potential is floating.
Claim 21
Dependent Claim
19 words
The method as in claim 15, wherein the temperature range for said substrate is less than approximately 250° C.
Claim 22
Independent Claim
71 words
A method of forming a material from a target in an opening on a wafer disposed within a vacuum chamber, comprising the steps of: a) maintaining a pressure in the vacuum chamber in the range of between 1 mTorr and 6 mTorr; b) providing a current to a first electromagnet; c) providing a current to a second electromagnet; and d) maintaining the wafer at a temperature of less than 250° C.
Claim 23
Independent Claim
71 words
A method of forming a material from a target in an opening on a wafer disposed within a vacuum chamber, comprising the steps of: a) maintaining a pressure in the vacuum chamber in the range of between 1 mTorr and 6 mTorr; b) providing a current to a first electromagnet; c) providing a current to a second electromagnet; and d) maintaining the wafer at a temperature of less than 250° C.
Claim 24
Dependent Claim
11 words
The method of claim 19, wherein the wafer is electrically grounded.
Claim 25
Dependent Claim
12 words
The method of claim 19, wherein the wafer has a floating potential.
Claim 26
Dependent Claim
24 words
The method of claim 19, further including the step of: providing a microwave power in the range of between 3 kW and 5 kW.
Claim 27
Dependent Claim
23 words
The method of claim 22, further comprising the step of: applying a voltage of between -600 V and -1000 V to said target.
Claim 28
Independent Claim
92 words
A method for depositing a material from a target into a high aspect ratio opening of a substrate by using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system having an annular quartz window disposed above said target which is located in a vacuum chamber, said method comprising the following steps: a) maintaining a pressure of approximately 3 mTorr in the vacuum chamber; b) providing a microwave power of approximately 5 kW to generate a high density plasma; and c) applying a voltage of approximately -800 volts to said target.
Claim 29
Independent Claim
92 words
A method for depositing a material from a target into a high aspect ratio opening of a substrate by using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system having an annular quartz window disposed above said target which is located in a vacuum chamber, said method comprising the following steps: a) maintaining a pressure of approximately 3 mTorr in the vacuum chamber; b) providing a microwave power of approximately 5 kW to generate a high density plasma; and c) applying a voltage of approximately -800 volts to said target.
Claim 30
Dependent Claim
59 words
The method of claim 24, further comprising the following steps: a) providing a current of a predetermined amount to a first electromagnet; and b) providing a current that is less than or equal to said predetermined amount to a second electromagnet that is disposed below said first electromagnet, wherein said first electromagnet and said second electromagnet surround said target.
Claim 31
Dependent Claim
12 words
The method of claim 25, wherein said substrate is connected to ground.
Claim 32
Dependent Claim
11 words
The method of claim 25, wherein said substrate's potential is floating.
Claim 33
Dependent Claim
24 words
The method as in claim 24 wherein said material is selected from a group consisting of Al, Cu, Ag, Ta, W, Ti and TiN.
Claim 34
Dependent Claim
14 words
The method of claim 24, wherein said substrate's temperature is less than 250° C.
References Cited (Backward Citations)
US5178739A
Cited
US5453305A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |