US5747360A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of metalizing a semiconductor wafer
Assignee: Applied Materials Inc
•
Filing: 1995-05-11
•
Granted: 1998-05-05
•
Expires: 2015-05-11
Abstract
Abstract A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and an Alloy Material such as hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and/or a composite of tungsten, is deposited on the surface in a single step from a single source. In the second step, a layer of the conductive metal is deposited over the alloy layer. Thus, using this method, metallization can be conveniently performed using two chambers.
Inventors
- 👤 Jaim Nulman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 00:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
114 words
A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the copper and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 2
Independent Claim
114 words
A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the copper and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the layer of copper is a copper alloy.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein the Alloy Material is selected from the group consisting of hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and a composite of tungsten.
Claim 5
Dependent Claim
34 words
The method of claim 1 wherein the step of depositing the alloy layer is performed in a first chamber at a temperature ranging from about room temperature to less than about 300 degrees centigrade.
Claim 6
Dependent Claim
49 words
The method of claim 1 wherein the step of depositing the layer of copper is performed in a second chamber at a temperature ranging from about room temperature to less than about 200 degrees centigrade, followed by increasing the temperature of the wafer to greater than 200 degrees centigrade.
Claim 7
Dependent Claim
26 words
The method of claim 5 wherein the temperature of the wafer is increased to a range between about 400 degrees centigrade to about 600 degrees centigrade.
Claim 8
Dependent Claim
25 words
The method of claim 1 wherein the step of depositing the layer of copper is performed at a temperature greater than about 200 degrees centigrade.
Claim 9
Dependent Claim
30 words
The method of claim 7 wherein the step of depositing the layer of copper is performed at a temperature ranging from about 400 degrees centigrade to about 600 degrees centigrade.
Claim 10
Dependent Claim
31 words
The method of claim 1 further comprising the step of forming a barrier layer between the step of forming a contact-hole and the step of depositing a layer of an alloy.
Claim 11
Independent Claim
128 words
A method of simultaneously metallizing the surface of semiconductor material and filling contact-holes, comprising the steps in the order list of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; in a first chamber, depositing on the surface of the semiconductor material a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step and from a single target formed of both the copper and the Alloy Material, the deposition being continued for time period such that only a portion of the contact-hole is filled with the layer of the alloy; and in a second chamber, depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 12
Independent Claim
128 words
A method of simultaneously metallizing the surface of semiconductor material and filling contact-holes, comprising the steps in the order list of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; in a first chamber, depositing on the surface of the semiconductor material a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step and from a single target formed of both the copper and the Alloy Material, the deposition being continued for time period such that only a portion of the contact-hole is filled with the layer of the alloy; and in a second chamber, depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 13
Dependent Claim
14 words
The method of claim 10 wherein the layer of copper is a copper alloy.
Claim 14
Dependent Claim
30 words
The method of claim 10 wherein the Alloy Material is selected from the group consisting of hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and a composite of tungsten.
Claim 15
Dependent Claim
30 words
The method of claim 10 wherein the step of depositing the alloy layer is performed at a temperature ranging from about room temperature to less than about 200 degrees centigrade.
Claim 16
Dependent Claim
46 words
The method of claim 10 wherein the step of depositing the layer of copper is performed at a temperature ranging from about room temperature to less than about 200 degrees centigrade, followed by increasing the temperature in the second chamber to greater than 200 degrees centigrade.
Claim 17
Dependent Claim
26 words
The method of claim 14 wherein the temperature in the second chamber is increased to range from about 400 degrees centigrade to about 600 degrees centigrade.
Claim 18
Dependent Claim
25 words
The method of claim 10 wherein the step of depositing the layer of copper is performed at a temperature greater than about 200 degrees centigrade.
Claim 19
Dependent Claim
30 words
The method of claim 16 wherein the step of depositing the layer of copper is performed at a temperature ranging from about 400 degrees centigrade to about 600 degrees centigrade.
Claim 20
Dependent Claim
38 words
The method of claim 10 further comprising the step of forming a barrier layer between the step of forming a contact-hole and the step of depositing on the surface of the semiconductor material a layer of an alloy.
Claim 21
Independent Claim
114 words
A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including aluminum and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the aluminum and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 22
Independent Claim
114 words
A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of: providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including aluminum and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the aluminum and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
Claim 23
Dependent Claim
14 words
The method of claim 19 wherein the layer of copper is a copper alloy.
Claim 24
Dependent Claim
30 words
The method of claim 19 wherein the Alloy Material is selected from the group consisting of hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and a composite of tungsten.
Claim 25
Dependent Claim
34 words
The method of claim 19 wherein the step of depositing the alloy layer is performed in a first chamber at a temperature ranging from about room temperature to less than about 300 degrees centigrade.
Claim 26
Dependent Claim
49 words
The method of claim 19 wherein the step of depositing the layer of copper is performed in a second chamber at a temperature ranging from about room temperature to less than about 200 degrees centigrade, followed by increasing the temperature of the wafer to greater than 200 degrees centigrade.
Claim 27
Dependent Claim
26 words
The method of claim 23 wherein the temperature of the wafer is increased to a range between about 400 degrees centigrade to about 600 degrees centigrade.
Claim 28
Dependent Claim
25 words
The method of claim 19 wherein the step of depositing the layer of copper is performed at a temperature greater than about 200 degrees centigrade.
Claim 29
Dependent Claim
30 words
The method of claim 25 wherein the step of depositing the layer of copper is performed at a temperature ranging from about 400 degrees centigrade to about 600 degrees centigrade.
Claim 30
Dependent Claim
31 words
The method of claim 19 further comprising the step of forming a barrier layer between the step of forming a contact-hole and the step of depositing a layer of an alloy.
References Cited (Backward Citations)
JPS58170036A
Cited
JPS6193647A
Cited
EP0248445A2
Cited
US4910169A
Cited
US4931410A
Cited
US4978639A
Cited
JPH02206122A
Cited
JPH02230756A
Cited
JPH02297937A
Cited
US5081064A
Cited
JPH0369118A
Cited
JPH03120722A
Cited
US5238874A
Cited
US5070391A
Cited
US4999160A
Cited
US5202008A
Cited
JPH0417338A
Cited
US5198388A
Cited
US5169803A
Cited
US5407863A
Cited
US5229325A
Cited
US5266521A
Cited
US5175125A
Cited
JPH05129298A
Cited
JPH04324636A
Cited
JPH0555203A
Cited
US5188717A
Cited
US5371042A
Cited
US5358733A
Cited
US5358616A
Cited
US5356836A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-04 | 2009-11-03 | 2010-05-05 | $7700.00 | Window Closed / Lapsed |