US5238874A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication method for laminated films comprising Al-Si-Co alloy film and refractory metal silioide copper film
Assignee: NEC Electronics Corp
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Filing: 1990-11-09
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Granted: 1993-08-24
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Expires: 2010-11-09
Abstract
Abstract As a wiring for semiconductor devices, the wiring consisting of an Al-Si-Cu alloy film is excellent in the electromigration resistance but is inferior in the stressmigration resistance. In order to compensate this aspect a laminated film consisting of an Al-Si-Cu alloy film and a refractory metal silicide film began to be used as the wiring, but a wiring thus obtained has a weakness in that its electromigration resistance deteriorates. However, it is possible to suppress the deterioration in the electromigration resistance while maintaining the stressmigration resistance by adding Cu to the refractory metal silicide film. In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
Inventors
- 👤 Yoshiaki Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
159 words
A method of manufacturing a laminated wiring for a semiconductor device in which the laminated wiring, formed on an insulating layer on a semiconductor substrate and comprising an aluminum-silicon-copper alloy film and a refractory metal silicide-copper alloy film, is in contact with a portion of a major surface of said semiconductor substrate through at least one contact hole formed in said insulating layer, said method comprising the steps of: forming the insulating film having at least one contact hole on a major surface of said semiconductor substrate; forming a laminated film including a first alloy layer including aluminum, silicon, and copper and a second alloy layer including silicon, copper, and a refractory metal selected from the group consisting of tungsten, molybdenum, tantalum and titanium on said insulating layer and said portion of the major surface; selectively etching said laminated film to form a laminated pattern; and thereafter annealing said laminated pattern thereby converting said pattern to said laminated wiring.
Claim 2
Independent Claim
159 words
A method of manufacturing a laminated wiring for a semiconductor device in which the laminated wiring, formed on an insulating layer on a semiconductor substrate and comprising an aluminum-silicon-copper alloy film and a refractory metal silicide-copper alloy film, is in contact with a portion of a major surface of said semiconductor substrate through at least one contact hole formed in said insulating layer, said method comprising the steps of: forming the insulating film having at least one contact hole on a major surface of said semiconductor substrate; forming a laminated film including a first alloy layer including aluminum, silicon, and copper and a second alloy layer including silicon, copper, and a refractory metal selected from the group consisting of tungsten, molybdenum, tantalum and titanium on said insulating layer and said portion of the major surface; selectively etching said laminated film to form a laminated pattern; and thereafter annealing said laminated pattern thereby converting said pattern to said laminated wiring.
Claim 3
Dependent Claim
44 words
A method of manufacturing as claimed in claim 1, wherein said refractory metal silicide-copper alloy film is a tungsten silicide-copper alloy film and the concentration of the copper in said tungsten silicide-copper alloy film is in the range of 0.1 to 1.0 weight percent.
Claim 4
Dependent Claim
34 words
A method of manufacturing as claimed in claim 1, wherein the concentration of copper in said refractory metal silicide-copper alloy film is higher than the concentration of copper in said aluminum-silicon copper alloy film.
Claim 5
Dependent Claim
43 words
A method of manufacturing as claimed in claim 3, wherein said refractory metal silicide-copper alloy film is a tungsten silicide-copper alloy film and the concentration of copper in said tungsten silicide-copper alloy film is in the range of 0.1 to 1.0 weight percent.
References Cited (Backward Citations)
JPS5934647A
Cited
US4495221A
Cited
US4443930A
Cited
EP0119497A1
Cited
US4742014A
Cited
JPH0261847A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-23 | 1997-02-22 | 1997-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-23 | 2001-02-22 | 2001-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-23 | 2005-02-22 | 2005-08-24 | $7700.00 | Window Closed / Lapsed |